#contents *2001 +W.G. van der Wiel, S. De Franceschi, J.M. Elzerman, S. Tarucha, L.P. Kouwenhoven, J. Motohisa, F. Nakajima, T. Fukui; "Two-stage Kondo effect in a quantum dot at high magnetic field", cond-mat/0110432 (2001). +Fumito Nakajima, Yuu Ogasawara, Junichi Motohisa, and Takashi Fukui; "GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices", [[J. Appl. Phys. 90 (2001) 2606.:http://dx.doi.org/10.1063/1.1389482]] (download from [[HUSCAP:http://hdl.handle.net/2115/5524]]) +Sangyoru Lee, Masashi Akabori, Takahiro Shirahata, Kenji Takada, Junichi Motohisa, and Takashi Fukui; "The Initial Stage of InGaAs Growth by MOVPE on Multiatomic-Stepped GaAs Structures", J. Cryst. Growth 231 (2001) 75. +Masashi Akabori, Junichi Motohisa and Takashi Fukui; "Anisotropic magneto-transport properties of 70nm-period lateral surface superlattices in high magnetic fields", Conference Proceedings of 25th International Conference on the Physics of Semiconductors (2001) . +Masashi Akabori, Junichi Motohisa and Takashi Fukui; "Formation of 0.5 $?mu$m-Period GaAs Network Structures for Two-Dimensional Photonic Crystals by Selective Area Metal-Organic Vapor Phase Epitaxy", IEEE Conference Proceedings of 27th International Symposium on Compound Semiconductors (2001) . +Haiyan An, Junichi Motohisa, and Takashi Fukui; "Optical anisotropy in InAs quantum dots formed on GaAs pyramids", Jpn. J. Appl. Phys. pt.1 40 (2001) 2312. Junichi Motohisa and Haiyan An; "Optical Properties and Carrier Relaxation in InAs Quantum Dots Selectively Formed on GaAs Pyramids", Conference Proceedings of 25th International Conference on the Physics of Semiconductors (2001) . +Junichi Motohisa and Haiyan An; "Optical Properties and Carrier Relaxation in InAs Quantum Dots Selectively Formed on GaAs Pyramids", Conference Proceedings of 25th International Conference on the Physics of Semiconductors (2001) . +Tomonori Terasawa, Fumito Nakajima, Junichi Motohisa and Takashi Fukui ; "Lateral Thickness Modulation of InGaAs Layers on GaAs in Selective Area Metalorganic Vapor Phase Epitaxy", J. Cryst. Growth 223 (2001) 523. +Haiyan An, Junichi Motohisa, and Takashi Fukui; "Optical anisotropy in InAs quantum dots formed on GaAs pyramids", Jpn. J. Appl. Phys. pt.1 40 (2001) 2312. *2000 +J. Motohisa, C. Tazaki, M. Akabori and T. Fukui; "Incorporation Mechanism of Si During Delta-Doping in GaAs Singular and Vicinal Surfaces", J. Cryst. Growth 221 (2000) 47. +C. K. Hahn, J. Motohisa and T. Fukui; "Position and Number Control of Self-Assembled InAs Quantum Dots by Selective Area Metal Organic Vapor Phase Epitaxy", J. Cryst. Growth 221 (2000) 599. +Toshifumi Harada, Yasuhiro Oda, Junichi Motohisa and Takashi Fukui; "Novel Nano-Faceting Structures Grown on Patterned Vicinal (110) GaAs Substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE)", Jpn. J. Appl. Phys. pt.1 39 (2000) 7090. +F. Nakajima, J. Motohisa and T. Fukui; "Self-Formed Quantum Nano-Structures by Selective Area MOVPE and Their Application to GaAs Single Electron Devices", Appl. Surf. Sci. 162--163 (2000) 650. +H. An and J. Motohisa; "Optical Properties of InAs Quantum Dots Formed on GaAs Pyramids", Appl. Phys. Lett. 77 (2000) 385. +C. K. Hahn, J. Motohisa and T. Fukui; "Formation of Single and Double Self-Organized InAs Quantum Dot by Selective Area Metal-Organic Vapor Phase Epitaxy", Appl. Phys. Lett. 76 (2000) 3947. +M. Akabori, J. Motohisa and T. Fukui; "Large Positive Magnetoresistance in Periodically Modulated Two-Dimensional Electron GaAs Formed on Self-Organized GaAs Multiatomic Steps", Physica E 7 (2000) 766. +J. Motohisa, C. Tazaki, T. Irisawa, M. Akabori and T. Fukui; "Selective Incorporation of Si along Step Edges During Delta-Doping on MOVPE-Grown GaAs (001) Vicinal Surfaces", J. Elec. Mat 29 (2000) 140. +Y. Oda and Takashi Fukui; "Natural Formation of Square Scale Structures on Patterned Vicinal Substrates by MOVPE: Application to the Fabrication of Quantum Structures", Inst. Phys. Conf. Ser. 166 (2000) 191. +M. Akabori, K. Yamatani, J. Motohisa and T. Fukui; "Transport through Quasi 1DEG Channels Having Periodic Potential Modulation Induced by Self-Organized GaAs Multiatomic Steps ", Inst. Phys. Conf. Ser. 166 (2000) 215. +C. K. Hahn, J. Motohisa and T. Fukui; "Formation of Single and Double Self-Organized InAs Quantum Dot by Selective Area Metal-Organic Vapor Phase Epitaxy", Appl. Phys. Lett. 76 (2000) 3947. *1999 +Y. Aritsuka, T. Umeda, J. Motohisa and T. Fukui; "Self-Limited GaAs Wire Growth by MOVPE and Application to InAs Quantum Dot Array", Mat. Res. Soc. Symp. Proc. 570 (1999) 97. +T. Ogawa, M. Akabori, J. Motohisa and T. Fukui; "Surface deformation phenomena induced by electron-beam irradiation in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates", Physica B 270 (1999) 313. +T. Ogawa, M. Akabori, J. Motohisa and T. Fukui; "Self organization in InGaAs/GaAs quantum disk structures on GaAs (311)B substrates", Microelectronic Engineering 47 (1999) 231. +T. Fukui, F. Nakajima, K. Kumakura and J. Motohisa; "Quantum Dots Fabricated by Selective Area MOVPE and Their Application to Single Electron Devices", Bull. Mater. Sci. 22 (1999) 531. +K. Hayakawa, K. Kumakura, J. Motohisa and T. Fukui; "AlGaAs nano-meter scale network structures fabricated by selective area MOVPE", Inst. Phys. Conf. Ser. 162 (1999) 415. +K. Yamatani, M. Akabori, J. Motohisa and T. Fukui; "Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps", Jpn. J. Appl. Phys. pt.1 38 (1999) 2562. +T. Ogawa, M. Akabori, J. Motohisa and T. Fukui; "Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates", Jpn. J. Appl. Phys. pt.1 38 (1999) 1040. +F. Nakajima, K. Kumakura, J. Motohisa and T. Fukui; "GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits", Jpn. J. Appl. Phys. pt.1 38 (1999) 415. *1998 +M. Akabori, J. Motohisa and T. Fukui; "Formation and Characterization of Modulated Two-Dimensional Electron Gas on GaAs multiatomic Steps grown by Metalorganic Vapor Phase Epitaxy", J. Cryst. Growth 195 (1998) 579. +K. Kumakura, J. Motohisa and T. Fukui; "Transport Characterization of GaAs Quantum Dots Connected with Quantum Wires Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy", Solid State Electron. 42 (1998) 1227. +J. Motohisa, J. J. Baumberg, A. P. Heberle and J. Allam; "Anomalous Excitation Intensity Dependence of Photoluminescence from InAs Self-Assembled Quantum Dots", Solid State Electron. 42 (1998) 1335. +S. Hara, J. Motohisa and T. Fukui; "Optical Characterization and Laser Operation of InGaAs Quantum Wires on GaAs Multiatomic Steps", Solid State Electron. 42 (1998) 1233. +T. Umeda, K. Kumakura, J. Motohisa and T. Fukui; "InAs Quantum Dot Formation on GaAs Pyramids by Selective Area MOVPE", Physica E 2 (1998) 714. +S. Hara, J. Motohisa and T. Fukui; "Self-Organised InGaAs Quantum Wire Lasers on GaAs Multi-Atomic Steps", Electron. Lett. 34 (1998) 894. +K. Kumakura, J. Motohisa and T. Fukui; "Fabrication and Transport Characterization of GaAs Quantum Dots Connected with Quantum Wires fabricated by Selective Area Metalorganic Vapor Phase Epitaxy", Physica E 2 (1998) 809. +T. Irisawa, J. Motohisa, M. Akabori and T. Fukui; "Delta-Doping and the Possibility of Wirelike Incorporation of Si on GaAs Vicinal Surfaces and in Metalorganic Vapor Phase Epitaxial Growth", Jpn. J. Appl. Phys. pt.1 37 (1998) 1514.