More Publications

2001

1. W.G. van der Wiel, S. De Franceschi, J.M. Elzerman, S. Tarucha, L.P. Kouwenhoven, J. Motohisa, F. Nakajima, T. Fukui; "Two-stage Kondo effect in a quantum dot at high magnetic field", cond-mat/0110432 (2001).
2. Fumito Nakajima, Yuu Ogasawara, Junichi Motohisa, and Takashi Fukui; "GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices", J. Appl. Phys. 90 (2001) 2606. (download from HUSCAP)
3. Sangyoru Lee, Masashi Akabori, Takahiro Shirahata, Kenji Takada, Junichi Motohisa, and Takashi Fukui; "The Initial Stage of InGaAs Growth by MOVPE on Multiatomic-Stepped GaAs Structures", J. Cryst. Growth 231 (2001) 75.
4. Masashi Akabori, Junichi Motohisa and Takashi Fukui; "Anisotropic magneto-transport properties of 70nm-period lateral surface superlattices in high magnetic fields", Conference Proceedings of 25th International Conference on the Physics of Semiconductors (2001) .
5. Masashi Akabori, Junichi Motohisa and Takashi Fukui; "Formation of 0.5 $?mu$m-Period GaAs Network Structures for Two-Dimensional Photonic Crystals by Selective Area Metal-Organic Vapor Phase Epitaxy", IEEE Conference Proceedings of 27th International Symposium on Compound Semiconductors (2001) .
6. Haiyan An, Junichi Motohisa, and Takashi Fukui; "Optical anisotropy in InAs quantum dots formed on GaAs pyramids", Jpn. J. Appl. Phys. pt.1 40 (2001) 2312.
7. Junichi Motohisa and Haiyan An; "Optical Properties and Carrier Relaxation in InAs Quantum Dots Selectively Formed on GaAs Pyramids", Conference Proceedings of 25th International Conference on the Physics of Semiconductors (2001) .
8. Tomonori Terasawa, Fumito Nakajima, Junichi Motohisa and Takashi Fukui ; "Lateral Thickness Modulation of InGaAs Layers on GaAs in Selective Area Metalorganic Vapor Phase Epitaxy", J. Cryst. Growth 223 (2001) 523.
9. Haiyan An, Junichi Motohisa, and Takashi Fukui; "Optical anisotropy in InAs quantum dots formed on GaAs pyramids", Jpn. J. Appl. Phys. pt.1 40 (2001) 2312.

2000

1. J. Motohisa, C. Tazaki, M. Akabori and T. Fukui; "Incorporation Mechanism of Si During Delta-Doping in GaAs Singular and Vicinal Surfaces", J. Cryst. Growth 221 (2000) 47.
2. C. K. Hahn, J. Motohisa and T. Fukui; "Position and Number Control of Self-Assembled InAs Quantum Dots by Selective Area Metal Organic Vapor Phase Epitaxy", J. Cryst. Growth 221 (2000) 599.
3. Toshifumi Harada, Yasuhiro Oda, Junichi Motohisa and Takashi Fukui; "Novel Nano-Faceting Structures Grown on Patterned Vicinal (110) GaAs Substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE)", Jpn. J. Appl. Phys. pt.1 39 (2000) 7090.
4. F. Nakajima, J. Motohisa and T. Fukui; "Self-Formed Quantum Nano-Structures by Selective Area MOVPE and Their Application to GaAs Single Electron Devices", Appl. Surf. Sci. 162--163 (2000) 650.
5. H. An and J. Motohisa; "Optical Properties of InAs Quantum Dots Formed on GaAs Pyramids", Appl. Phys. Lett. 77 (2000) 385.
6. C. K. Hahn, J. Motohisa and T. Fukui; "Formation of Single and Double Self-Organized InAs Quantum Dot by Selective Area Metal-Organic Vapor Phase Epitaxy", Appl. Phys. Lett. 76 (2000) 3947.
7. M. Akabori, J. Motohisa and T. Fukui; "Large Positive Magnetoresistance in Periodically Modulated Two-Dimensional Electron GaAs Formed on Self-Organized GaAs Multiatomic Steps", Physica E 7 (2000) 766.
8. J. Motohisa, C. Tazaki, T. Irisawa, M. Akabori and T. Fukui; "Selective Incorporation of Si along Step Edges During Delta-Doping on MOVPE-Grown GaAs (001) Vicinal Surfaces", J. Elec. Mat 29 (2000) 140.
9. Y. Oda and Takashi Fukui; "Natural Formation of Square Scale Structures on Patterned Vicinal Substrates by MOVPE: Application to the Fabrication of Quantum Structures", Inst. Phys. Conf. Ser. 166 (2000) 191.
10. M. Akabori, K. Yamatani, J. Motohisa and T. Fukui; "Transport through Quasi 1DEG Channels Having Periodic Potential Modulation Induced by Self-Organized GaAs Multiatomic Steps ", Inst. Phys. Conf. Ser. 166 (2000) 215.
11. C. K. Hahn, J. Motohisa and T. Fukui; "Formation of Single and Double Self-Organized InAs Quantum Dot by Selective Area Metal-Organic Vapor Phase Epitaxy", Appl. Phys. Lett. 76 (2000) 3947.

1999

1. Y. Aritsuka, T. Umeda, J. Motohisa and T. Fukui; "Self-Limited GaAs Wire Growth by MOVPE and Application to InAs Quantum Dot Array", Mat. Res. Soc. Symp. Proc. 570 (1999) 97.
2. T. Ogawa, M. Akabori, J. Motohisa and T. Fukui; "Surface deformation phenomena induced by electron-beam irradiation in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates", Physica B 270 (1999) 313.
3. T. Ogawa, M. Akabori, J. Motohisa and T. Fukui; "Self organization in InGaAs/GaAs quantum disk structures on GaAs (311)B substrates", Microelectronic Engineering 47 (1999) 231.
4. T. Fukui, F. Nakajima, K. Kumakura and J. Motohisa; "Quantum Dots Fabricated by Selective Area MOVPE and Their Application to Single Electron Devices", Bull. Mater. Sci. 22 (1999) 531.
5. K. Hayakawa, K. Kumakura, J. Motohisa and T. Fukui; "AlGaAs nano-meter scale network structures fabricated by selective area MOVPE", Inst. Phys. Conf. Ser. 162 (1999) 415.
6. K. Yamatani, M. Akabori, J. Motohisa and T. Fukui; "Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps", Jpn. J. Appl. Phys. pt.1 38 (1999) 2562.
7. T. Ogawa, M. Akabori, J. Motohisa and T. Fukui; "Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates", Jpn. J. Appl. Phys. pt.1 38 (1999) 1040.
8. F. Nakajima, K. Kumakura, J. Motohisa and T. Fukui; "GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits", Jpn. J. Appl. Phys. pt.1 38 (1999) 415.

1998

1. M. Akabori, J. Motohisa and T. Fukui; "Formation and Characterization of Modulated Two-Dimensional Electron Gas on GaAs multiatomic Steps grown by Metalorganic Vapor Phase Epitaxy", J. Cryst. Growth 195 (1998) 579.
2. K. Kumakura, J. Motohisa and T. Fukui; "Transport Characterization of GaAs Quantum Dots Connected with Quantum Wires Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy", Solid State Electron. 42 (1998) 1227.
3. J. Motohisa, J. J. Baumberg, A. P. Heberle and J. Allam; "Anomalous Excitation Intensity Dependence of Photoluminescence from InAs Self-Assembled Quantum Dots", Solid State Electron. 42 (1998) 1335.
4. S. Hara, J. Motohisa and T. Fukui; "Optical Characterization and Laser Operation of InGaAs Quantum Wires on GaAs Multiatomic Steps", Solid State Electron. 42 (1998) 1233.
5. T. Umeda, K. Kumakura, J. Motohisa and T. Fukui; "InAs Quantum Dot Formation on GaAs Pyramids by Selective Area MOVPE", Physica E 2 (1998) 714.
6. S. Hara, J. Motohisa and T. Fukui; "Self-Organised InGaAs Quantum Wire Lasers on GaAs Multi-Atomic Steps", Electron. Lett. 34 (1998) 894.
7. K. Kumakura, J. Motohisa and T. Fukui; "Fabrication and Transport Characterization of GaAs Quantum Dots Connected with Quantum Wires fabricated by Selective Area Metalorganic Vapor Phase Epitaxy", Physica E 2 (1998) 809.
8. T. Irisawa, J. Motohisa, M. Akabori and T. Fukui; "Delta-Doping and the Possibility of Wirelike Incorporation of Si on GaAs Vicinal Surfaces and in Metalorganic Vapor Phase Epitaxial Growth", Jpn. J. Appl. Phys. pt.1 37 (1998) 1514.

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