April 27, 2017


1. Reviewed Papers


1) K. Koyanagi, S. Kasai and H. Hasegawa, "Control of GaAs Schottky Barrier Height by Ultrathin Molecular Beam Epitaxy Si Interface Control Layer", Jpn. J. Appl. Phys. vol.32, pp.502-510 (1993).


2) H. Hasegawa, K. Koyanagi and S. Kasai, "Barrier Height Control and Current Transport in GaAs and InP Schottky Diodes Having An Ultrathin Silicon Interface Control Layer", Proc. of 1st International Symposium on Control of Semiconductor Interfaces, 'Control of Semiconductor Interfaces', Elsevier Science Publisher B.V. the Netherlands, pp.187-192 (1994).


3) S. Kasai and H. Hasegawa, "Fabrication and Characterization of Novel Lateral Surface Superlattice Structures Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers", Jpn. J. Appl. Phys. vol.35, pp.1340-1347 (1996).


4) S. Uno, T. Hashizume, S. Kasai, N.-J. Wu and H. Hasegawa, "0.86 eV Platinum Schottky Barrier on Indium Phosphide by in Situ Electrochemical Process and Its Application to MESFETs", Jpn. J. Appl. Phys. vol.35, pp.1258-1263 (1996).


5) S. Kasai, T. Hashizume and H. Hasegawa, "Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates", Jpn. J. Appl. Phys. vol.35, pp. 6652-6658 (1996).


6) S. Kasai, K. Jinushi, H. Tomozawa and H. Hasegawa, "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas", Jpn. J. Appl. Phys. vol.36, pp.1678-1685 (1997).


7) H. Okada, S. Kasai, H. Fujikura, T. Hashizume and H. Hasegawa, "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires", Jpn. J. Appl. Phys. vol.36, pp.1163-1172 (1997).


8) H. Hasegawa, T. Sato, H. Okada, K. Jinushi, S. Kasai and Y. Satoh, "Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots", Appl. Surf. Sci. vol. 123/124, pp.335-338 (1998).


9) Y. Satoh, S. Kasai, K. Jinushi and H. Hasegawa, "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG", Jpn. J. Appl. Phys. vol. 37, pp.1548-1590 (1998).


10) S. Kasai, Y. Satoh and H. Hasegawa, "Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors", Physica B, vol.272, pp.88-91 (1999).


11) S. Kasai, Y. Satoh and H. Hasegawa, "GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits", Inst. Phys. Conf. Ser. vol. 166, pp.219-222, IOP Publishing (2000).


12) T. Sato, S. Kasai, H. Okada and H. Hasegawa, "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in situ Electrochemical Process", Jpn. J. Appl. Phys. vol. 39, pp.4609-4615 (2000).


13) M. Iwaya, S. Kasai, H. Okada, J. Nakamura and H. Hasegawa, "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors", Jpn. J. Appl. Phys. vol. 39, pp.4651-4652 (2000).


14) H. Hasegawa, T. Sato and S. Kasai, "Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP", Appl. Surf. Sci. vol.166, pp.92-96 (2000).


15) H. Hasegawa, N. Negoro, S. Kasai, Y. Ishikawa and H. Fujikura, "Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy", J. Vac. Sci. & Technol. B, vol.18, pp.2100-2108 (2000).


16) S. Kasai and H. Hasegawa, "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots", Jpn. J. Appl. Phys., vol. 40, no.3B, pp.2029-2032 (2001).


17) H. Hasegawa and S. Kasai, "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires", Physica E, vol.11, no.2-3, pp.149-154 (2001). 


18) Y. G. Xie, S. Kasai, H. Takahashi, C. Jiang and H. Hasegawa, "A Novel InGaAs/InAlAs Insulated Gate Psuedomorphic HEMT with a Silicon Interface Control Layer Showing High DC- and RF-Performance", IEEE Electron Device Letter, vol. 22, no.7, pp.312-314 (2001).


19) T. Yamada, Y. Kinoshita, S. Kasai, H. Hasegawa and Y. Amemiya, "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram", Jpn. J. Appl. Phys., vol. 40, no. 7, 4485-4488 (2001). 


20) H. Takahashi, M. Yamada, Y. G. Xie, S. Kasai and H. Hasegawa, "Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer", IEICE-C, vol. E84-C, no.10, pp.1344-1349 (2001).


21) Y.-G. Xie, S. Kasai, H. Takahashi, C. Jiang and H. Hasegawa, "Fabrication and characterization of InGaAs/InAlAs insulated gate psuedomorphic HEMTs having a silicon interface control layer", IEICE-C, vol.E84-C, no.10, pp.1335-1343 (2001).


22) S. Kasai, N. Negoro and H. Hasegawa, "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors", Appl. Surf. Sci., vol. 175/176, pp.255-259 (2001).


23) T. Sato, S. Kasai and H. Hasegawa, "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process, Appl. Surf. Sci., vol.175/176, pp.181-186 (2001).


24) T. Sato, S. Kasai and H. Hasegawa, "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices", Jpn. J. Appl. Phys., vol.40, no.3B, pp.2021-2025 (2001).


25) M. Endo, Z. Jin, S. Kasai and H. Hasegawa, "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures", Jpn. J. Appl. Phys., vol.41, no.4B, pp.2689-2693 (2002).


26) M. Yumoto, S. Kasai and H. Hasegawa, "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires", Jpn. J. Appl. Phys., vol.41, no.4B, pp.2671-2674 (2002).


27) S. Kasai and H. Hasegawa, "III-V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks", Appl. Surf. Sci., vol. 190, no. 1-4, pp.176-183 (2002).


28) M. Yumoto, S. Kasai and H. Hasegawa, "Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures", Appl. Surf. Sci., vol. 190, no. 1-4, pp.242-246 (2002).


29) N. Negoro, S. Kasai and H. Hasegawa, "Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4×4) surfaces", Appl. Surf. Sci., vol. 190, no. 1-4, pp.269-274 (2002). 


30) Z. Fu, S. Kasai and H. Hasegawa, "Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer", Appl. Surf. Sci., vol. 190, no. 1-4, pp.298-301 (2002). 


31) S. Kasai and H. Hasegawa, "GaAs and InGaAs single electron hexagonal nanowire circuits based on binary decision diagram logic architecture", Physica E, vol.13, no.2-4, pp. 925-929 (2002).


32) T. Muranaka, S. Kasai, C. Jiang, and H. Hasegawa, "Control of morphology and wire width in InGaAs ridge quantum wires grown by atomic hydrogen-assisted selective molecular beam epitaxy", Physica E, vol.13, no.2-4, pp. 1185-1189 (2002).


33) S. Kasai and H. Hasegawa, "A Single Electron Binary-Decision-Diagram Quantum Logic Circuit Based on Schottky Wrap Gate Control of a GaAs Nanowire Hexagon", IEEE Electron Device Letters, vol. 23, no. 8, pp.446-448 (2002).


34) M. Yumoto, S. Kasai and H. Hasegawa, "Graph-based quantum logic circuits and their realization by novel GaAs multiple quantum wire branch switches utilizing Schottky wrap gates", Microelectronic Eng., vol. 63, no. 1-3, pp.287-291 (2002).


35) Z. Fu, H. Takahashi, T. Hashizume, S. Kasai and H. Hasegawa, "Optimization of Novel Oxide-Free Insulated Gate Structure for InP Having An Ultrathin Silicon Interface Control Layer", Jpn. J. Appl. Phys., vol.41, no.2B, pp.1062-1066 (2002).


36) S. Kasai, W. Han, M. Yumoto, and H. Hasegawa, "Terahertz response of Schottky wrap gate-controlled quantum dots", Phys. Stat. Sol. C vol. 0, pp.1329-1332 (2003).


37) T. Kakumu, F. Ishikawa, S. Kasai, T. Hashizume and H. Hasegawa, "Control of order parameter during growth of In0.5Ga0.5P/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine", Jpn. J. Appl. Phys., vol. 42, pp.2230-2236 (2003).


38) H. Hasegawa, T. Muranaka, S. Kasai and T. Hashizume, "Fabrication of AlGaN/GaN quantum nanostructures by methane-based dry etching and characterization of their electrical properties", Jpn. J. Appl. Phys., vol. 42, pp.2375-2381 (2003).


39) S. Kasai, M. Yumoto and H. Hasegawa, "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach", Solid State Electron., vol. 47, pp.199-204 (2003). 


40) Atsushi Kameda, S. Kasai, T. Sato and H. Hasegawa, "Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs", Solid State Electron., 47, pp.323-331 (2003).


41) S. Kasai, M. Yumoto, T. Tamura, I. Tamai, T. Sato, and H. Hasegawa, "Design and implementation of ultra-small and ultra-low-power digital systems on GaAs-based hexagonal nanowire networks utlizing an hexagonal BDD quantum circuit approach", ECS proceeding volume 2004-13, pp.125-146 (2004). 


42) H. Hasegawa, S. Kasai, and T. Sato, "Hexagonal binary decision diagram quantum circuit approach for ultra-low power III-V quantum LSIs (invited)", IEICE Transactions on Electronics, vol. E87C, no.11, pp.1757-1768 (2004).


43) J. Kotani, S. Kasai, T. Hashizume, and H. Hasegawa, "Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors", J. Vac. Sci Technol. B, vol.23, pp.1799-1807 (2005).


44) B. M. Hashim, S. Kasai, T. Hashizume, and H. Hasegawa, "Large Modulation of Conductance in Interdigital-Gated HEMT Devices Due to Surface Plasma Wave Interactions", Jpn. J. Appl. Phys., vol. 44, pp.2729-2734 (2005).


45) R. Jia, N. Shiozaki, S. Kasai, and H. Hasegawa, "Removal of Side-gating Effects in GaAs Quantum Nanodevices with Nano-Schottky Gates by Surface Passivation Using Si Interface Control Layer", e-J. Surf. Sci. Nanotech., vol.3, pp.314-318 (2005). 


46) J. Kotani, S. Kasai, H. Hasegawa, and T. Hashizume, "Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation", e-J. Surf. Sci. Nanotech., vol.3, pp.433-438 (2005).


47) R. Jia, S. Kasai, and H. Hasegawa, "Anomalous Current Leakage and Depletion Width Control in Nanometer Scale Schottky Gates Formed on AlGaAs/GaAs Surfaces", IOP Conference Series vol. 184, pp.21-26 (2005). 


48) M. Yumoto, S. Kasai, and H. Hasegawa, "Speed-Power Performance of GaAs-based Quantum Wire Switches with Schottky Wrap Gates for Hexagonal BDD Quantum LSIs", IOP Conference Series vol. 184, pp.213-216 (2005). 


49) T. Nakamura, Y. Abe, S. Kasai, H. Hasegawa and T. Hashizume, "Properties of a GaAs single electron path switching node device using a single quantum dot for hexagonal BDD quantum circuits", Journal of Physics, Conference Series, vol 38, no 1, pp.104-107 (2006).


50) S. Kasai, J. Kotani, T. Hashizume and H. Hasegawa, "Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale Schottky gates", Journal of Electronic Materials, vol 35, no 4, pp.568-575 (2006).


51) T. Oya, T. Asai, R. Kagaya, S. Kasai and Y. Amemiya, "Stochastic resonance among single-electron neurons on Schottky wrap-gate devices", Brain-Inspired IT 2005, International Congress Series, vol 1291, pp.213-216 (2006). 


52) R. Jia, H. Hasegawa, N. Shiozaki, S. Kasai, "Device interference in GaAs quantum wire transistors and its suression by surface passivation using Si interface control layer", J. Vac. Sci. & Technol. B, vol 24, pp.2060-2068 (2006). 


53) H. Hasegawa, S. Kasai, T. Sato and T. Hashizume, "Future of heterostructure microelectronics and roles of materials research for its progress", IEICE Transaction on Electronics, vol. E89C, no. 7, pp.874-882 (2006). 


54) H. Hasegawa, T. Sato, S. Kasai, B. Adamowicz and T. Hashizume, "Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures", Solar Energy, vol. 80, no 6, pp.629-644 (2006).


55) T. Tamura, I. Tamai, S. Kasai, T. Sato, H. Hasegawa and T. Hashizume, "Embedded nanowire network growth and node device fabrication for GaAs-based high-density hexagonal binary decision diagram quantum circuits", Jpn. J. Appl. Phys., vol. 45, no 4B, pp.3614-3620 (2006). 


56) W.-C. Zhang, N.-J. Wu, T. Hashizume and S. Kasai, "A Novel Hybrid Voltage Controlled Ring Oscillator Using Single Electron and MOS Transistors", IEEE Transactions on Nanotechnology, vol.6, no.2, pp.146-157 (2007).


57) T. Nakamura, Y. Shiratori, S. Kasai and T. Hashizume, "Fabrication and Characterization of A GaAs-based Three-Terminal Nanowire Junction Device Controlled by Double Schottky Wrap Gates", Appl. Phys. Lett., vol. 90, no.10, p.102104 (2007).


58) S. Kasai, T. Nakamura and Y. Shiratori, "A multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates", Appl. Phys. Lett., vol. 90, no. 20, p.203504 (2007).


59) R. Jia, S. Kasai, A. Wang, S.-B. Long, J. Bin Niu, Z.-G. Li and M. Liu, "Surface-induced large side-gating phenomenon in GaAs quantum wire transistors and its removal by surface passivation using Si interface control layer", Appl. Phys. Lett. vol. 90, no. 13, p.132124 (2007).


60) J. Kotani, M. Tajima, S. Kasai, and T. Hashizume, "Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures", Appl. Phys. Lett., vol. 91, no. 9, p.093501 (2007).


61) S. Kasai, T. Nakamura and Y. Shiratori, "Multiple Path Switching Device Utilizing Size-Controlled Nano-Schottky Wrap Gates for MDD-Based Logic Circuits", J. of Multiple-Valued Logic & Soft Computing vol.13, no.3, pp.267-277 (2007).


62) S. Kasai, T. Nakamura, Y. Shiratori, and T. Tamura, "Schottky Wrap Gate Control of Semiconductor Nanowire Networks for Novel Quantum Nanodevice-Integrated Logic Circuits Utilizing BDD Architecture", Journal of Computational and Theoretical Nanoscience, vol.4, no.6, pp.1120-1132 (2007).


63) A.M. Hashim, S. Kasai, T. Hashizume, H. Hasegawa, "Integration of interdigital-gated plasma wave device for proximity communication system application", Microelectronics Journal, vol.38, no.12, pp.1263-1267 (Dec. 2007).


64) A.M. Hashim, S. Kasai, K. Iizuka, T. Hashizume, H. Hasegawa, "Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier", Microelectronics Journal, vol.38, no.12, pp.1268-1272 (Dec. 2007).


65) T. Tamura, J. Kotani, S. Kasai, and T. Hashizume, "Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor", Appl. Phys. Express vol.1, pp.023001.1-3 (Feb. 2008).


66) Y. Shiratori and S. Kasai, "Effect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors ", Japanese Journal of Applied Physics vol. 47, no. 4, pp.3086-3090 (Apr. 2008).


67) S. Kasai, T. Nakamura, S. F. Bin Abd Rahman, and Y. Shiratori, "Study on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates", Japanese Journal of Applied Physics vol. 47, no. 6, pp.4958-4964 (Jun. 2008). 


68) H.-Q. Zhao, T. Nakamura, S. Kasai, T. Hashizume and N.-J. Wu, "Fabrication and characterization of active and sequential circuits utilizing Schottky-wrap-gate- controlled GaAs hexagonal nanowire network structures", IEICE Transactions on Electronics, vol. E91-C, no. 7, pp.1063-1069 (Jul. 2008).


69) S. Kasai and T. Asai, "Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks", Applied Physics Express, vol. 1, pp.083001.1-3 (Jul. 2008).


70) A.M. Hashim, S. Kasai, and H. Hasegawa, "Observation of first and third harmonic responses in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction", Superlattices and Microstructure, vol.44, no.6, pp.754-760 (Dec. 2008).


71) A.R. Shaharin Fadzli, D. Nakata, Y. Shiratori, and S. Kasai, "Boolean Logic Gates Utilizing GaAs Three Branch Nanowire Junctions Controlled by Schottky Wrap Gates", Japanese Journal of Applied Physics, vol 48, no.6, p. 06FD01 (Jun. 2009).


72) S. Kasai, "Investigation on Stochastic Resonance in A Quantum Dot and Its Summing Network", International Journal of Nanotechnology and Molecular Computation, vol.1, pp.70-79 (Apr. 2009).


73) H.-Q. Zhao, S. Kasai, Y. Shiratori and T. Hashizume, "A binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topology," Nanotechnology, vol.20, art.no. 245203, (June 2009). 


74) C. Chen, R. Jia, W. Li, H. Li, T. Ye, X. Liu, M. Liu, S. Kasai, T. Hashizume, N. Wu, "Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx (x=1 or 2)", Journal of Vacuum Science & Technology B, vol. 27, no. 6, pp.2462-2467 (Nov/Dec 2009)


75) Y. Shiratori, K. Miura, R. Jia, N.-J. Wu, and S. Kasai, "Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network", Appl. Phys. Express, vol. 3, art. no. 025002 (3pages) (Jan. 2010).


76) S. Kasai, K. Miura, Y. Shiratori, "Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network", Appl. Phys. Lett. vol.96, issue 19, article no. 194102 (3 pages) (May 2010).


77) D. Nakata, H. Shibata, Y. Shiratori, and S. Kasai, "Voltage Transfer Characteristics in GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates", Jpn. J. Appl. Phys. vol.49, art.no. 06GG03 (5 pages) (2010).


78) Y. Hakamata, Y. Ohno, K. Maehashi, S. Kasai, K. Inoue, and K. Matsumoto, "Enhancement of weak-signal response based on stochastic resonance in carbon nanotube field-effect transistors", J. Appl. Phys, vol.108, art. no. 104313 (4 pages) (2010).


79) C. Chen, R. Jia, H.-H. Yue, H.-F. Li, X.-Y. Liu, D.-Q. Wu, W.-C. Ding, T.-C. Ye, S. Kasai, T. Hashizume, H.-H. CHu, S.-L. Wang, "Silicon nanowire-array-textured solar cells for photovoltaic application", J. Appl. Phys. vol. 108, isuue 9, art.no. 094318 (Nov. 2010).


80) S. Kasai, Y. Shiratori, K. Miura, Y. Nakano, and T. Muramatsu, "Control of stochastic resonance response in a GaAs-based nanowire field-effect transistor", Physica status solidi (c) vol.8, issue 2, pp.384-386 (Feb. 2011).


81) Y. Shiratori, K. Miura, and S. Kasai, "Programmable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits", Microelectronic Engineering vol.88, issue 8, pp.2755-2758 (Aug. 2011).


82) W. Li, R. Jia, C. Chen, H. Li, X. Liu, H. Yue, W. Ding, T. Ye, S. Kasai, T. Hashizume, N. Wu, and B. Xu, "Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage", J. Vac. Sci. Technol. B vol.29, no.2, art. no. 021018 (6 pages) (Mar. 2011).


83) C. Chen, R. Jia, H. Li, Y. Meng, X. Liu, T. Ye, S. Kasai, T. Hashizume, N. Wu, S. Wang, and J. Chu, "Electrode-contact enhancement in silicon nanowire-array-textured solar cells", Appl. Phys. Lett. vol.98, no.14, art.no. 143108 (Apr. 2011).


84) H. Shibata, Y. Shiratori, and S. Kasai, "Novel Nanowire-Based Flip-Flop Circuit Utilizing Gate-Controlled GaAs Three-Branch Nanowire Junctions", Jpn. J. Appl. Phys. vol.50, issue 6, art. no. 06GF03 (Jun. 2011). 


85) K. Miura, Y. Shiratori, and S. Kasai, "Characterization of Low-Frequency Noise in GaAs Nanowire Field-Effect Transistors Controlled by Schottky Wrap Gate", Jpn. J. Appl. Phys. vol.50, issue 6, art. no. 06GF18 (Jun. 2011).


86) H.-Q. Zhao and S. Kasai, "WPG-Controlled Quantum BDD Circuits with BDD Architecture on GaAs-Based Hexagonal Nanowire Network Structure", Journal of Nanomaterials vol. 2012, art.ID 726860 (6 pages) (Jan. 2012).


87) S. F. A. Rahman, S. Kasai, and A. M. Hashim, "Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping", Appl. Phys. Lett. vol.100, issue 19, p.193116 (4 pages) (2012).


88) S. F. A. Rahman, A. M. Hashim, and S. Kasai, "Identification of Graphene Layer Numbers from Color Combination Contrast Image for Wide-Area Characterization", Jpn. J. Appl. Phys. vol.51, issue 6, art. no. 06FD09 (5 pages) (Jun. 2012).


89) T. Muramatsu, K. Miura, Y. Shiratori, Z. Yatabe, and S. Kasai, "Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNx Gate Insulator", Jpn. J. Appl. Phys. vol.51, issue 6, art. no. 06FE18 (5 pages) (Jun. 2012).


90) S. F. Abd Rahman, S. Kasai, A. M. Hashim, "Fabrication and Transport Performance Characterization of Chemically-Doped Three-branch Junction Graphene Device", Sains Malaysiana vol. 42, issue 2, pp.187-192 (Feb. 2013) (IF=, TC=0)


91) T. Tanaka, Y. Nakano, and S. Kasai, "Fabrication and Characterization of GaAs-based Nanowire Devices Having with Multiple Asymmetric Gates for Electrical Brownian Ratcheting", Jpn. J. Appl. Phys. vol. 52, issue 6, 06GE07 (6 pages) (Jun. 2013). 


92) M. Sato and S. Kasai, "Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method", Jpn. J. Appl. Phys. vol.52, issue 6, 06GE08 (5 pages) (Jun. 2013).


93) Y. Kimura, Y. Sun, T. Maemoto, S. Sasa, S. Kasai, and M. Inoue, "Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plasitc Substrates", Jpn. J. Appl. Phys. vol.52, issue 6, 06GE09 (3 pages) (Jun. 2013).


94) X. Yin and S. Kasai, "Graphene-based three-branch nano-junction (TBJ) logic inverter", Phys. Status Solidi C, vol. 10, issue 11, pp. 1485-1488 (Sep. 2013).


95) S. Kasai, M. Aono, and M. Naruse "Amoeba-inspired computing architecture implemented using charge dynamics in parallel capacitance network", Appl. Phys. Lett. vol. 103, p.163703 (4 pages) (Oct. 2013).


96) S. Kasai, Y. Tadokoro, and A. Ichiki, "Design and characterization of nonlinear functions for the transmission of a small signal with non-Gaussian noise", Phys. Rev. E vol. 88, p. 062127 (6 pages) (Dec. 2013).


97) Y. Imai, M. Sato, T. Tanaka1, S. Kasai, Y. Hagiwara, H. Ishizaki, S. Kuwabara, and T. Arakawa, "Detection of weak biological signal utilizing stochastic resonance in a GaAs-based nanowire FET and its parallel summing network", Jpn. J. Appl. Phys. vol.53, no.6S, p.06JE01 (May. 2014).


98) Y. Tadokoro, S. Kasai, and A. Ichiki, "Concept, analysis, and demonstration of a novel delay network exhibiting stochastic resonance induced by external noise", Digital Signal Processing, vol. 37, pp. 1–12 (Feb. 2015).


99) Z. Yatabe, T. Muramatsu, J. T. Asubar, and S. Kasai, "Calculating relaxation time distribution function from power spectrum based on inverse integral transformation method", Physics Letters A, vol.379, no.7, pp.738-742 (Mar. 2015).


100) S. Inoue, R. Kuroda, X. Ying, M. Sato, and S. Kasai, " Detection of discrete surface charge dynamics in GaAs-based nanowire through metal-tip-induced current fluctuation" Jpn. J. Appl. Phys. vol.55, p.04DN07 (Apr. 2015).


101) Y. Abe, R. Kuroda, X. Yin, M. Sato, T. Tanaka, and S. Kasai, "Structural parameter dependence of directed current generation in GaAs nanowire-based electron Brownian ratchet devices", Jpn. J. Appl. Phys. vol.54, p 06FG02 (Jun. 2015).


102) M. Aono, S. Kasai, S.-J. Kim, M. Wakabayashi, H. Miwa, and M. Naruse, "Amoeba-inspired nanoarchitectonic computing implemented using electrical Brownian ratchets", Nanotechnology, vol.26, p.234001 (Jun. 2015).


103) Y. Sun, K. Ashida, S. Sasaki, M. Koyama, T. Maemoto, S. Sasa, S. Kasai, I. Iniguez-de-la-Torre, and T. Gonzalez, "Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes", J. Phys. Conf. Series 647, p.012068 (4 pages) (2015).


104) H. Tanaka, R. Arima, M. Fukumori, D. Tanaka, R. Negishi, Y. Kobayashi, S. Kasai, T. Yamada, and T. Ogawa, "Method for Controlling Electrical Properties of Single-Layer Graphene Nanoribbons via Adsorbed Planar Molecular Nanoparticles", Sci. Rep. 5, p.12341 (July 2015).


105) X. Yin, M. Sato, and S. Kasai, "Analysis on Non-ideal Nonlinear Characteristics of Graphene-based Three-branch Nano-junction Device", IEICE Trans. Electron. vol.E98C, pp.434-438 (May 2015).


106) M. Sato, X. Yin, R. Kuroda, and S. Kasai, "Detection of discrete surface charge dynamics in GaAs-based nanowire through metal-tip-induced current fluctuation", Jpn. J. Appl. Phys. 55, p. 02BD01 (Feb. 2016).


107) K. Shirata, Y. Inden, S. Kasai, T. Oya, Y. Hagiwara, S. Kaeriyama, and H. Nakamura, "Robust myoelectric signal detection based on stochastic resonance using multiple-surface-electrode array made of carbon nanotube composite paper", Jpn. J. Appl. Phys. vol.55, p 04EM07 (Jun. 2016). 


108) Y. Tadokoro, S. Kasai, A. Ichiki, and H. Tanaka, "Design Framework of Image Sensor System Based on Dynamic Range Extension by Adding Noise for Saturated Conditions", IEEE Trans. Systems, Man, and Cybernetics: Systems, vol. 48, pp.1121-1128 (Aug. 2016).


109) R. Kuroda and S. Kasai, "Implementation of a noise-coexistence threshold logic architecture on a GaAs-based nanowire FET network", International Journal of Parallel, Emergent and Distributed Systems, vol. 31 (8 pages) (Jul. 2016) (10.1080/17445760.2016.1201673).



2Conference Presentations (invited)


1) H. Hasegawa, K. Koyanagi and S. Kasai, "Barrier Height Control and Current Transport in GaAs and InP Schottky Diodes Having An Ultrathin Silicon Interface Control Layer", 1st International Symposium on Control of Semiconductor Interfaces (ISCSI), Nov. 8-12, 1993, Karuizawa, Japan (invited).


2) H. Hasegawa and S. Kasai, “Prospects and Key Issues for Compound Semiconductor Quantum Devices”, 2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD), June 28-30, 2000, Naha, Japan (invited).


3) S. Kasai and H. Hasegawa, "III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks", 8th International Conference on the Formation of Semiconductor Interfaces (ICFSI), June 10-15, 2001, Sapporo, Japan (invited).


4) S. Kasai, T. Sato and H. Hasegawa "Prospects of III-V quantum LSIs based on hexagonal BDD approach", 2003 International Semiconductor Device Research Symposium, Dec. 10-12, 2003, Washington DC, USA (invited).


5) H. Hasegawa, S. Kasai, M. Yumoto, and T. Sato, "Hexagonal BDD Quantum Circuit Architecture for Intelligent Quantum (IQ) Chips", 11th Advanced Heterostructure Workshop, Honolulu, Dec. 5-10, 2004, Hawaii, USA (invited).


6) H. Hasegawa, S. Kasai, and T. Sato, "Ultra-Low Power III-V Quantum LSIs for Intelligent Quantum Chips", Advanced Workshop on 'Frontiers in Electronics' (WOFE) 2004, Dec. 17-22, 2004, Aruba, Netherlands (invited).


7) H. Hasegawa, T. Sato, S. Kasai and T. Hashizume, "Dynamics and Control of Recombination Processes at Semiconductor Surfaces, Interfaces and Nanostructures", Solar Renewable Energy News 2005 International Conference (SREN), Apr. 2-8, 2005, Firenze, Italy (invited).


8) H. Hasegawa, T. Sato, S. Kasai and T. Hashizume, "Sensors Based on III-V Compound Semiconductors and Their Application to IQ-Chips", The 1st International Workshop of NANO Systems Institute (IW-NSI), Seoul, Korea, May 30-31, 2005 (invited).


9) H. Hasegawa, S. Kasai and T. Sato, "Growth of III-V Quantum Nanostructure Networks and Their Device", 3rd International Conference on Materials for Advanced Technologies 2005, Jul. 3-8, 2005, Singapore (invited).


10) H. Hasegawa and S. Kasai, "III-V Compound Semiconductor Nanotechnology for Smart Systems", The 2005 International Conference on MEMS, NANO, and Smart Systems, Jul. 24-27, 2005, Banff, Canada (invited).


11) H. Hasegawa and S. Kasai, "Future of Heterostructure Devices and Roles of Material Research for Their Progress", Key Note Address at The 6th Tropical Workshop on Heterostrucure Microelectronics (TWHM2005), Aug. 22-25, 2005, Hyogo, Japan (invited).


12) H. Hasegawa and S. Kasai, "High Density and Ultra-Low Power III-V Quantum LSIs for Ubiquitous Network Era", 2005 Tera-bit Level Nanodevice (TND) Technical Forum, Oct.6-7, 2005, Seoul, Korea (invited).


13) S. Kasai, "Novel Quantum Nanodevice-based Logic Circuits Utilizing Semiconductor Nanowire Networks and Hexagonal BDD Architecture", 15th International Workshop on Post-Binary ULSI Systems, May 17, 2006, Singapore (invited).


14) S. Kasai, "Stochastic Resonance Nanodevices for Fluctuation-Robust Electronic Systems," The Seventeenth Annual International Conference on COMPOSITES/NANO ENGINEERING (ICCE-17), Jul. 26-Aug. 1, 2009, Honolulu, Hawaii (keynote lecture).


15) S. Kasai, "Functional Electron Nanodevices and Their Integrated Circuits on Semiconductor Nanowire Networks", ESciNano Annual Symposium 2009, Nov. 30-Dec. 1, 2009, Johor, Malaysia (plenary talk).


16) S. Kasai, "Stochastic Resonance Nanodevices Toward Fluctuation Cooperative Nanoelectronics", 2010 International Conference on Enabling Science and Nanotechnology, Dec. 1-2, 2010, Kuala Lumpur, Malaysia (invited).


17) S. Kasai, "Stochastic Resonance and Related Phenomena in GaAs-based Nanowire FET Networks", The 2011 Villa Conference on Interaction Among Nanostructures (VCIAN-2011), Apr. 21-25, 2011, Las Vegas, USA.


18) S. Kasai, S. F. A. Rahman, M. Sato, X. Yin, and T. Maemoto, "Nonlinear Three Branch Nano-Junction Devices and Their Application to Logic Circuits", 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012), June 27 - 29, 2012, Naha, Japan (invited).


19) S. Kasai, M. Sato, T. Tanaka, X. Yin, R. Kuroda, Y. Imai, "Nonlinear Behaviors in III-V Semiconductor Nanowires and Their Application to Information Detection and Processing", The First International Workshop on Information Physics and Computing in Nano-scale Photonics and Materials (IPCN), September 7, 2012, University of Orléans, France (invited).


20) T. Maemoto, Y. Sun, S. Sasaki, K. Koike, M. Yano, S. Kasai, and S. Sasa, "ZnO-based transparent nanodiodes and thin-film-transistor applications", SPIE Photonics West, Feb. 1-6, 2014, San Francisco, USA (invited).


21) M. Aono, S.-J. Kim, M. Naures, S. Kasai, and H. Miwa, "Amoeba-inspired Nanoarchitectonic Computing", MANA International Symposium 2014, March 5-7, 2014, Tsukuba, Japan (invited).


22) S. Kasai, "Stochastic Resonance and Related Phenomena in Nonlinear Electron Nanodevices", 6th IEEE International Nanoelectronics Conference, July 28-31, 2014, Sapporo, Japan (invited).


23) M. Aono, Song-Ju Kim, S. Kasai, H. Miwa, "Amoeba-Inspired Heuristic Search for NP-Complete Problem Solution at the Nanoscale", 2014 International Symposium on Nonlinear Theory and its Applications (NOLTA2014), September 14-18, 2014, Luzern, Switzerland (invited).


24) S. Kasai, "Bio-inspired Nonlinear Nano-devices for Coexisting with Fluctuation", The 16th Takayanagi Kenjiro Memorial Symposium, Nov. 11-12, 2014, Shizuoka, Japan (plenary).


25) S. Kasai, K. Shirata, and Y. Inden, “Stochastic Resonance in Nonlinear Electron Devices and Its Application”, Energy, Material and Nanotechnology (EMN) Hong Kong Meeting, Hong Kong, Dec. 9-11, 2015 (invited).


26) S. Kasai, Y. Abe, S. Inoue, K. Shirata, and M. Sato, "Fluctuation-induced Dynamics and Information Transfer in Nonlinear Nanodevices and Molecular Devices", The International Chemical Congress of Pacific Basin Societies 2015 (Pacifichem 2015), Honolulu, Hawaii, USA, Dec. 15-20, 2015 (invited).



3Conference Presentation (contributed)


1) K. Koyanagi, S. Kasai and H. Hasegawa, "Control of GaAs Schottky Barrier Height by Ultrathin MBE Si Interface Control Layer", The 1992 International Conference on Solid State Device and Materials (SSDM'92), Tsukuba, Japan, Aug. 26-28, 1992.


2) H. Hasegawa, S. Kodama, S. Kasai and H. Fujikura, "Si-interlayer Based Interface Control Technology for Compound Semiconductor Mesoscopic Structures", Surface and Interfaces in Mesoscopic Devices, Hawaii, USA, Apr. 24-29, 1994.


3) S. Kasai and H. Hasegawa, "Optimization of Interface Control Layer for InP Schottky Barriers", 6th International Conference on Indium Phosphide and Related Materials (IPRM), Santa Barbara, USA, Mar. 27-31, 1994.


4) S. Kasai and H. Hasegawa, "A Novel Lateral Surface SuperLattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers", International Conference on Solid State Device and Materials (SSDM'95), Osaka, Japan, Aug.21-24 1995.


5) S. Uno, T. Hashizume, S. Kasai, N.-J. Wu and H. Hasegawa, "Schottky Barrier on Indium Phosphide by in Situ Electrochemical Process and Its Application to MESFETs", International Conference on Solid State Device and Materials (SSDM'95), Osaka, Japan, Aug.21-24 1995.


6) S. Kasai, H. Okada, T. Hashizume and H. Hasegawa, "Design, Fabrication and EBIC Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of 2DEG by Fine Schottky Gates", 9th International Microprocess Conference (MPC'96), Kitakyushu, Japan, July 8-11, 1996.


7) S. Kasai, K. Jinushi, H. Okada, H. Tomozawa, T. Hashizume and H. Hasegawa, "Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas", International Conference on Solid State Device and Materials (SSDM'96), Yokohama, Japan, August 26-29, 1996.


8) H. Okada, H. Fujikura, S. Kasai, T. Hashizume and H. Hasegawa, "Quantum transport and Coulomb Blockade in Gate-Controlled GaAs and InGaAs Quantum Wires", 1996 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS'96), Sapporo, Japan, November 4-7, 1996.


9) H. Okada, S. Kasai, H. Fujikura, T. Hashizume and H. Hasegawa, “Fabrication and Transport Properties of GaAs and InGaAs Quantum Wires Controlled by Novel Schottky In-Plane and Wrap Gates”, 39th Electronic Materials Conference (EMC), Colorado, USA, June 25-27, 1997.


10) S. Kasai, T. Sato, Y. Satoh, T. Hashizume and H. Hasegawa, “Electrochemical Formation and Characterization of Schottky In-Plane and Wrap Gate Structures for Realization of GaAs- and InP-Based Quantum Wires and Dots”, Sixth International Conference on the Formation of Semiconductor Interfaces (ICFSI-6), Cardiff, UK, June 23-27, 1997.


11) S. Kasai, Y. Satoh, H. Okada, T. Hashizume and H. Hasegawa, "Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors", International Conference on Solid State Device and Materials (SSDM'97), Hamamatsu, Japan, September 16-19, 1997.


12) Y. Satoh, T. Miyamoto, S. Kasai and H. Hasegawa, "Conductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors", 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Kyoto, Japan, July 19-23, 1999.


13) S. Kasai, Y. Satoh and H. Hasegawa, "GaAs Quantum Wire Transistors and Single Electron Transistors Using Schottky Wrap Gates for Quantum Integrated Circuits", 26th International Symposium on Compound Semiconductors (ISCS'99), Berlin, Germany, August 23-26, 1999.


14) M. Iwaya, S. Kasai, H. Okada, J. Nakamura and H. Hasegawa, "Electrochemical Formation of Schottky In-Plane Gate Structures for GaAs Single and Coupled Quantum Wire Transistors", International Symposium on Surface Science for Micro- and Nano-Device Fabrication (ISSS), Tokyo, Japan, Nov. 29-Dec.1, 1999.


15) T. Sato, S. Kasai, H. Okada and H. Hasegawa, "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in situ Electrochemical Process", International Symposium on Surface Science for Micro- and Nano-Device Fabrication (ISSS), Tokyo, Japan, Nov. 29-Dec.1, 1999.


16) H. Hasegawa, T. Sato and S. Kasai, “Properties of nanometer-sized metal contacts on GaAs, InP and their related materials”, Surfaces and Interfaces of Mesoscopic Devices (SIMD'99), Maui, USA, December 5-10 1999.


17) S. Kasai, T. Sato, N. Negoro, H. Hujikura and H. Hasegawa, "Control of Metal-Semiconductor Interfaces and Semiconductor Surfaces for Compound Semiconductor Quantum Devices", Third SANKEN International Symposium, Osaka, Japan, March 14-15, 2000.


18) Y. G. Xie, S. Kasai, Takahashi, C. Jiang and H. Hasegawa, "Low Leakage, High Breakdown Voltage and High Transconductance Insulated Gate PHEMTs Utilizing Silicon Interface Control Layer", Topical Workshop on Heterostructure Microelectronics (TWHM2000), Kyoto, Japan, Aug. 20-23, 2000.


19) H. Takahashi, M. Yamada, Y. G. Xie, S. Kasai and H. Hasegawa, "Completely Oxide-Free Insulated Gate Structure Having Silicon Interface Control Layer for InP MISFETs", Topical Workshop on Heterostructure Microelectronics (TWHM2000), Japan, Aug. 20-23, Kyoto.


20) S. Kasai and H. Hasegawa, "GaAs Single Electron Transistors and Logic Inverters Based on Schottky Wrap Gate Structures", 58th Device Research Conference (DRC2000), Denver, USA, June 19-21, 2000.


21) S. Kasai, N. Negoro and H. Hasegawa, "Scanning Tunneling Spectroscopy Characterization of GaAs Surface Passivated by MBE-Grown Ultrathin Si Layer", 42nd Electronic Materials Conference (EMC), Denver, USA, June 21-23, 2000.


22) T. Sato, S. Kasai and H. Hasegawa, "Formation and Characterization of Nanometer-Sized Schottky Contacts on III-V Materials by In-Situ Electrochemical Process", 42nd Electronic Materials Conference (EMC), Denver, USA, June 21-23, 2000.


23) S. Kasai, N. Negoro and H. Hasegawa, "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors", International Conference on Solid Films and Surfaces (ICSFS-10), Princeton, USA, July 9-13, 2000.


24) T. Sato, S. Kasai and H. Hasegawa, "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by In-situ Electrochemical Process", International Conference on Solid Films and Surfaces (ICSFS-10), Princeton, USA, July 9-13, 2000.


25) N. Negoro, S. Kasai and H. Hasegawa, "Space and Energy Distribution of Surface Gap States on MBE-Grown and Silicon-Covered (001) GaAs Surfaces Studied by Scanning Tunneling Spectroscopy", 25th International Conference on the Physics of Semiconductors (ICPS), Osaka, Japan, September 18-22, 2000.


26) S. Kasai and H. Hasegawa, "Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors", 25th International Conference on the Physics of Semiconductors (ICPS), Osaka, Japan, September 18-22, 2000.


27) M. Iwaya, M. Yumoto, S. Kasai and H. Hasegawa, “Coupled Mode Propagation in a Novel Coupled Quantum Wire Transistor Based on Schottky In-Plane Gate Control of AlGaAs/GaAs Double Quantum Wells”, 25th International Conference on the Physics of Semiconductors (ICPS), Osaka, Japan, September 18-22, 2000.


28) S. Kasai and H. Hasegawa, "GaAs Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wire and Dots", International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS2000), Sapporo, Japan, Sept. 10-14, 2000.


29) T. Sato, S. Kasai and H. Hasegawa, "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices", International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS2000), Sapporo, Japan, Sept. 10-14, 2000.


30) Y. Kinoshita, T. Yamada, S. Kasai, Y. Amemiya and H. Hasegawa, “Quantum-Dot Logic Systems Based on the Shared Binary-Decision Diagram”, International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS2000), Sapporo, Japan, Sept. 10-14, 2000.


31) S. Kasai, H. Hasegawa and Y. Amemiya, "GaAs Schottky Wrap-Gate Binary-Decision-Diagram Devices for Realization of Novel Single Electron Logic Architecture”, International Electron Devices Meeting (2000 IEDM), San Francisco, USA, December 11-13, 2000.


32) H. Hasegawa and S. Kasai, "Compound Semiconductor Devices and Circuits Based on Novel Schottky Gate Technology", 2001 RCIQE International Seminar on "Advanced Semiconductor Devices and Circuits", Sapporo, Japan, Jan. 31-Feb.1, 2001.


33) Z. Fu, H. Takahashi, T. Hashizume, S. Kasai and H. Hasegawa; "Optimization of Novel Oxide-Free Insulated Gate Structure for InP Having An Ultrathin Silicon Interface Control Layer", 2001 International Conference on Indium Phosphide and Related Materials (IPRM01), Nara, Japan, May 14-18, 2001.


34) A. Ito, T. Muranaka, S. Kasai and H. Hasegawa, "Atomic Hydrogen Assisted Selective MBE Growth of InGaAs Ridge Quantum Wire Honeycomb Network Structures for Binary-Decision Diagram Quantum LSIs", 2001 International Conference on Indium Phosphide and Related Materials (IPRM01), Nara, Japan, May 14-18, 2001.


35) M. Yumoto, M. Iwaya, S. Kasai and H. Hasegawa, "Gate Control Properties of Nanometer-Scale Schottky Wrap Gates for GaAs-based Quantum Structures", 8th International Conference on the Formation of Semiconductor Interfaces (ICFSI), June 10-15, 2001, Sapporo, Japan.


36) N. Negoro, S. Kasai and H. Hasegawa, "Microscopic Study of Surface States on Clean and Si-deposited GaAs (001) Surfaces by Bias -dependent STM Topology and STS Spectra", 8th International Conference on the Formation of Semiconductor Interfaces (ICFSI), June 10-15, 2001, Sapporo, Japan.


37) M. Yumoto, S. Kasai and H. Hasegawa, "A Novel GaAs Binary Decision Diagram Device Having Quantum Wire Branch-Switches Controlled by Wrap Gates", 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan, September 26-28, 2001.


38) M. Endo, Z. Jin, S. Kasai and H. Hasegawa, "Reactive Ion Beam Etching of GaN and AlGaN for Nano-structure Fabrication Using Methane-Based Gas Mixtures", 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan, September 26-28, 2001.


39) S. Kasai and H. Hasegawa, "Binary-Decision-Diagram Quantum Circuits Based on Schottky Wrap Gate Control of GaAs Honeycomb Nanowires", 59th Annual Device Research Conference (DRC), Notre Dame, USA, June 25-27, 2001.


40) A.Kameda, S. Kasai, T. Sato, and H. Hasegawa, "Effects of Surface States on Control Characteristics of Nanometer Scale Schottky Gates Formed on GaAs", 2001 International Semiconductor Device Research Symposium (ISDRS), Washington DC, USA, Dec. 5-7, 2001.


41) S. Kasai, M. Yumoto and H. Hasegawa, "Fabrication of GaAs-Based Integrated 2-bit Half and Full Adders by Novel Hexagonal BDD Quantum Circuit Approach", 2001 International Semiconductor Device Research Symposium (ISDRS), Washington DC, USA, Dec. 5-7, 2001.


42) S. Kasai and H. Hasegawa, "GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture", 10th International Conference on Modulated Semiconductor Structures (MSS10), Linz, Austria, July 23-27, 2001. 


43) T. Muranaka, S. Kasai, C. Jiang and H. Hasegawa, "Growth of InGaAs Ridge Quantum Wires Dots for Quantum LSIs by Atomic Hydrogen-Assisted Selective MBE Growth on InP Substrates", 10th International Conference on Modulated Semiconductor Structures (MSS10), Linz, Austria July 23-27, 2001.


44) H. Hasegawa, S. Kasai, M. Yumoto and T. Muranaka, "Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires", Advanced Research Workshop on Semiconductor Nanostructures, Queenstown, New Zealand, Feb. 5-9, 2001.


45) S. Kasai, M. Iwaya, M. Yumoto and H. Hasegawa, "Quantum Transport and Gate-Controlled Mode Hybridization in GaAs-based Schottky In-Plane Gate Coupled Quantum Wire Transistors", The International Symposium on Carrier Interactions in Mesoscopic Systems, Atsugi, Japan, Feb. 13-14, 2001.


46) M. Yumoto, S. Kasai and H. Hasegawa, "Novel Multi-Branch Quantum Wire Switches for Graph-Based LSIs Utilizing Schottky Wrap Gate Control of GaAs/AlGaAs Nanowires", Fifth International Symposium on New Phenomena in Mesoscopic Structures, Maui, USA, Nov. 25-30, 2001.


47) H. Hasegawa and S. Kasai, "Hexagonal Binary Decision Diagram Quantum Circuits on III-V Nanowire Networks - a Novel Approach toward Quantum LSIs -", 25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2001), Cagliari, Italy, May 27-30, 2001.


48) S. Kasai, W. Han and H. Hasegawa, "Terahertz Response of Schottky Wrap Gate-Controlled Quantum Dots", 2nd International Conference on Semiconductor Quantum Dots (QD2002), Tokyo, Japan, Sep. 30- Oct. 3, 2002.


49) T. Kakumu, F. Ishikawa, S. Kasai, T. Hashizume and H. Hasegawa, "Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by GaAs Source Molecular Beam Epitaxy Using Tertiarybutylphosphine", 2002 International Conference on Solid State Devices and Materials (SSDM2002), Nagoya, Japan, September 9-11, 2002.


50) S. Kasai, M. Yumoto, T. Muranaka, T. Fukushi and H. Hasegawa, "Realization of High-Density III-V Quantum Integrated Circuits by A Hexagonal Binary Decision Diagram Quantum Circuit", 2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2002), Sapporo, Japan, July 1-3, 2002.


51) S. Kasai, M. Yumoto and H. Hasegawa, "Path Switching Characteristics of GaAs Quantum Wire Branch Switches with Schottky Wrap Gate for Hexagonal BDD Quantum Integrated Circuits", 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science, Malmo, Sweden, June 24-28, 2002.


52) S. Kasai, M. Yumoto, T. Fukushi, T. Muranaka and H. Hasegawa, "Graph-Based Quantum Integrated Circuits Using III-V Multi-Branch Nanowire Networks and their Nano-Schottky Gate Control", 60th Device Research Conference (DRC), Santa Barbara, USA, June 24-26, 2002.


53) S. Kasai, M. Yumoto and H. Hasegawa, "Fabrication of Compound Semiconductor Quantum Integrated Circuits Based on Hexagonal Binary-Decision Diagram Approach", 26th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Chernogolovka, Russia, May 21-26, 2002.


54) A.Kameda, S. Anantathanasarn, S. Kasai and H. Hasegawa, "Effects of Surface States and Silicon ICL-Based Passivation on Nanometer Scale Schottky Gates Formed on GaAs", 5th Topical Workshop on Heterostructure Microelectronics (TWHM2003), Okinawa, Japan, Jan.21-24, 2003.


55) S. Kasai, M. Yumoto, T. Tamura and H. Hasegawa, "Implementation of Digital Logic Subsystems Utilizing A Hexagonal Binary Decision Diagram Quantum Circuit Approach for Nano Processors", 2003 RCIQE International Seminar on "Quantum Nanoelectronics for Meme-Media-Based Information Technologies", Sapporo, Japan, February 12-14, 2003.


56) C. Jiang, S. Kasai, and H. Hasegawa, "Schottky Gate Control of Photoluminescence from InGaAs Quantum Wells and Ridge Quantum Wires," 5th International Conference on Indium Phosphide and Related Materials (IPRM2003), Santa Barbara, USA, May 12 -16, 2003.


57) S. Kasai, M. Yumoto, T. Tamura and H. Hasegawa, "Feasibility Study of GaAs Digital Processors Based on Hexagonal BDD Quantum Logic Circuit Approach", 61st Device Research Conference (DRC), Salt Lake City, Utah, USA, June 23-25, 2003.


58) M. Yumoto, S. Kasai and H. Hasegawa, "Fabrication and Speed-Power Characterization of Quantum Wire Switches with Nanometer-Scale Schottky Gate Control for GaAs Hexagonal BDD Quantum Circuits", 45th Electronic Materials Conference (EMC), Salt Lake City, Utah, USA, June 25 - 27, 2003.


59) S. Kasai, M. Yumoto, T. Tamura, and H. Hasegawa, "Design and Implantation of Hexagonal Quantum BDD Logic Subsystems for Nanoprocessor Arithmetic Logic Processing", 2003 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD2003), Busan, Korea, June 30 -July 2, 2003.


60) R. Jia, S. Kasai and H. Hasegawa, "Side Gating Phenomenon in GaAs Quantum Wire Transistors", 2003 International Conference on Solid State Devices and Materials (SSDM2003), Tokyo, Japan, Sept. 16-18, 2003.


61) S. Kasai, W. Han and H. Hasegawa, "Theoretical and Experimental Study of a Single Electron THz Detector Using a GaAs Quantum Dot", The 11th IEEE International Conference on Terahertz Electronics (THz2003), Sendai, Japan, Sept. 24-26, 2003.


62) M. Yumoto, S. Kasai and H. Hasegawa, "Basic Properties of Quantum Wire Switches for GaAs Hexagonal BDD Quantum LSIs", The 1st International Workshop on Ubiquitous Knowledge Network Environment, Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies 21COE Program, Sapporo, Japan, Nov. 25-27, 2003.


63) S. Kasai, T. Tamura, T. Sato, I. Tamai, M. Yumoto, and H. Hasegawa, "Basic properties of GaAs quantum wire switches formed on selectively MBE grown nanowires for novel hexagonal BDD quantum LSIs", Sixth International Conference on New Phenomena in Mesoscopic Structures and Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, Hawaii, USA, Dec. 1-5, 2003.


64) S. Kasai, M. Yumoto, T. Tamura, and H. Hasegawa, "Design and Implementation of a Digital Nano-Architecture Utilizing GaAs-Based Hexagonal Nanowire Networks Controlled by Schottky Wrap Gate", 2004 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanolelectronics for Meme-Media-Based Information Technologies (II)", Sapporo, Japan, Feb. 9-11, 2004.


65) M. Yumoto, S. Kasai and H. Hasegawa, "Switching Properties of GaAs-based Quantum Wire Branch Switches controlled by Nanometer-Scale Schottky Wrap Gate for Hexagonal BDD Quantum Circuits", 2004 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanolelectronics for Meme-Media-Based Information Technologies (II)", Sapporo, Japan, Feb. 9-11, 2004.


66) S. Kasai, M. Yumoto, T. Tamura, and H. Hasegawa, "Investigation of Novel Nanoprocessors Based on Hexagonal BDD Quantum Circuits Utilizing GaAs-based Nanowire Network Structures", Satellite Session on Quantum Nanoelectronics for Meme-Media-Based Information Technology, 7th Hokkaido Univ. - Seoul National Univ. Joint Symposium, Sapporo, Japan, July 8-9, 2004.


67) M. Yumoto, S. Kasai, and H. Hasegawa, "Speed-Power Performance of Nanometer-Scale Quantum Wire Switches for Hexagonal BDD Quantum Circuits", Satellite Session on Quantum Nanoelectronics for Meme-Media-Based Information Technology, 7th Hokkaido Univ. - Seoul National Univ. Joint Symposium, Sapporo, Japan, July 8-9, 2004.


68) M. Hashim, M. Takeuchi, S. Kasai, T. Hashizume, and H. Hasegawa, "The Interaction Characteristics of Semiconductor Plasma Waves and Its Application to High Frequency Device", Satellite Session on Quantum Nanoelectronics for Meme-Media-Based Information Technology, 7th Hokkaido Univ. - Seoul National Univ. Joint Symposium, Sapporo, Japan, July 8-9, 2004.


69) R. Jia, S. Kasai, and H. Hasegawa, "Sidegating Effect Study in AlGaAs/GaAs Quantum Wire Transistors", Satellite Session on Quantum Nanoelectronics for Meme-Media-Based Information Technology, 7th Hokkaido Univ. - Seoul National Univ. Joint Symposium, Sapporo, Japan, July 8-9, 2004.


70) M. Yumoto, S. Kasai, and H. Hasegawa, "Speed-Power Performances of GaAs-based Quantum Wire Switches with Schottky Wrap Gates for Hexagonal BDD Quantum LSIs", 31st International Symposium on Compound Semiconductors (ISCS), Seoul, Korea, Sept 12-16, 2004.


71) R. Jia, S. Kasai, and H. Hasegawa, "Anomalous Current Leakage and Depletion Width Control in Nanometer Scale Schottky Gates Formed on AlGaAs/GaAs Surfaces", 31st International Symposium on Compound Semiconductors (ISCS), Seoul, Korea, Sept 12-16, 2004.


72) T. Tamura, M. Yumoto, S. Kasai, T. Sato, and H. Hasegawa, "GaAs BDD Quantum Node Switches Fabricated on Selectively MBE Grown Quantum Wire Networks", 46th Electronic Materials Conference (EMC), Notre Dame, Indiana, USA, June 23-25, 2004.


73) M. Hashim, M. Takeuchi, S. Kasai, T. Hashizume, and H. Hasegawa, "Large Conductance Modulation in Interdigital Gate HEMT Device Due to Surface Plasma Wave Interactions and Its Device Application", 2004 International Conference on Solid State Device and Material (SSDM2004), Tokyo, Japan, Sept 14-17, 2004.


74) R. Jia, S. Kasai, and H. Hasegawa, "Device Isolation Issue for High Density Integration of GaAs Quantum Wire Transistors", 16th International Vacuum Congress (IVC-16), 12th International Conference on Solid Surfaces, 8th International Conference on Nanometer-Scale Science and 17th Vacuum National Symposium, Venice, Italy, June 18-July 2, 2004.


75) S. Kasai, M. Yumoto, T. Tamura, I. Tamai, T. Sato, and H. Hasegawa, "Design and Implementation of Ultra-Small and Ultra-Low-Power Digital Systems Utilizing A Hexagonal BDD Quantum Circuits on GaAs-based Hexagonal Nanowire Network Structures", 206th Meeting of The Electrochemical Society, Honolulu, Hawaii, USA, Oct.3-8, 2004.


76) H. Hasegawa, S. Kasai, and T. Sato, "Toward Realization of Ultralow Power III-V Nanoprocessors for Intelligent Quantum Chips", 2005 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanoelectronics for Meme-Media-Based Information Technologies (III)", Sapporo, Feb 8-10, 2005.


77) S. Kasai and H. Hasegawa, "Fabrication and Simulation Study Ultra-low power III-V Nanoprocessor for IQ Chips (invited)", The 2nd International Symposium on Ubiquitous Knowledge Network Environment, Sapporo, Japan, March 16-18, 2005.


78) H. Hasegawa, J. Kotani, S. Kasai and T. Hashizume, "Lateral Current Injection and Charging near Periphery of Schottky Gates in AlGaN/GaN Heterostructure Transistors", 29th Workshop on Compound Semiconductor Devices and Integrated Circuit, Wales, UK, May 16-18, 2005.


79) R. Jia, S. Kasai, T. Sato, and H. Hasegawa, "Investigation of Side-Gating Effects in GaAs-based Quantum Wire Transistor", 2005 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanoelectronics for Meme-Media-Based Information Technologies (III)", Sapporo, Feb 8-10, 2005.


80) M. Yumoto, S. Kasai and H. Hasegawa, "Switching Properties of Schottky WPG Quantum Wire for GaAs-Based High-Density Hexagonal BDD Quantum LSIs", 2005 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanoelectronics for Meme-Media-Based Information Technologies (III)", Sapporo, Feb 8-10, 2005.


81) M. Hashim, S. Kasai, T. Hashizume, and H. Hasegawa, "Interactions between Carrier Plasma Waves in 2DEG AlGaAs/GaAs and Slow Electromagnetic Space Harmonic Waves", 2005 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanoelectronics for Meme-Media-Based Information Technologies (III)", Sapporo, Feb 8-10, 2005.


82) S. Kasai, M. Yumoto, T. Tamura, and H. Hasegawa, "System Design and Implementation of Ultra-Low Power Digital Nanoprocessors Utilizing GaAs-Based Hexagonal BDD Logic Quantum Circuits", 2005 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanoelectronics for Meme-Media-Based Information Technologies (III)", Sapporo, Feb 8-10, 2005.


83) H. Hasegawa, J. Kotani, R. Jia, S. Kasai, and T. Hashizume, "Lateral Tunneling Injection and Peripheral Dynamic Charging in Nanometer-Scale Schottky Gates on AlGaN/GaN Hetrosturucture Transistors", 32nd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI32), Montana, USA, Jan. 23-27, 2005.


84) M. Hashim, S. Kasai, H. Hasegawa, and T. Hashizume, "Basic Study of Plasma Wave Interactions in GaAs Interdigital-Gated HEMT Devices from Microwave up to THz Frequencies", International Semiconductor Device Research Symposium (ISDRS), Bethesda, Maryland, USA, December 7-9, 2005.


85) S. Kasai, and H. Hasegawa, “Feasibility study of a digital nanoprocessor utilizing GaAs quantum wire switches and hexagonal BDD quantum circuit architecture”, Second Joint International Conference on New Phenomena in Mesoscopic Systems and Surfaces and Interfaces of Mesoscopic Devices, Maui, USA, Nov. 27- Dec. 2, 2005.


86) T. Nakamura, Y. Abe, S. Kasai, H. Hasegawa, and T. Hashizume, “Properties of a GaAs single electron path switching node device using a single quantum dot for hexagonal BDD quantum circuits”, Second Joint International Conference on New Phenomena in Mesoscopic Systems and Surfaces and Interfaces of Mesoscopic Devices, Maui, USA, Nov. 27- Dec. 2, 2005.


87) J. Kotani, S. Kasai, H. Hasegawa, and T. Hashizume, "Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation", International Symposium on Surface Science and Nanotechnology (ISSS), Omiya, Japan, Nov. 14-17, 2005.


88) R. Jia, N. Shiozaki, S. Kasai, and H. Hasegawa, "Side-Gating in GaAs Quantum Wire Transistors and Its Removal by Surface Passivation Using Si Interface Control Layer", International Symposium on Surface Science and Nanotechnology (ISSS), Omiya, Japan, November 14-17, 2005.


89) T. Tamura, I. Tamai, S. Kasai, T. Sato, H. Hasegawa and T. Hashizume, “Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits”, 2005 Solid State Devices and Materials (SSDM2005), Kobe, Japan, Sep. 12-15, 2005.


90) S. Kasai, J. Kotani, T. Hashizume, and H. Hasegawa, "Surface Leakage Currents and Peripheral Charging in Nanometer-Scale Schottky Gates of AlGaN/GaN Heterostructure Transistors", 47th TMS Electronic Materials Conference (EMC), Santa Barbara, Santa Barbara, USA, June 22-24, 2005.


91) Y. Abe, M. Yumoto, T. Tamura, S. Kasai, and H. Hasegawa, "GaAs-Based Single Electron Y-Branch Switches for Hexagonal BDD Quantum Circuits", 47th TMS Electronic Materials Conference (EMC), Santa Barbara, USA, June 22-24, 2005.


92) J. Kotani, S. Kasai and T. Hashizume, "Effects of lateral tunneling leakage current on control characteristics of sub-micron gates in AlGaN/GaN HFETs", 6th International conference on Nitride semiconductors (ICNS-6), Bremen, Germany, Aug. 28 - Sept. 2, 2005.


93) S. Kasai and H. Hasegawa, "Study on switching operations of III-V quantum nanodevices for ultra-low power nanoprocessors utilizing hexagonal BDD quantum circuits", The 3rd International Symposium on Ubiquitous Knowledge Network Environment, Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies, Sapporo, Japan, Feb. 27-Mar. 1, 2006.


94) R. Jia, H. Hasegawa, N. Shiozaki and S. Kasai, "Device Interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer", The 3rd International Symposium on Ubiquitous Knowledge Network Environment, Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies, Sapporo, Japan, Feb. 27-Mar. 1, 2006.


95) T. Tamura, I. Tamai, S. Kasai, T. Sato and H. Hasegawa, "Selectively MBE Grown GaAs-Based Hexagonal Nanowire Networks for BDD Circuit Application", The 3rd International Symposium on Ubiquitous Knowledge Network Environment, Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies, Sapporo, Japan, Feb. 27-Mar. 1, 2006.


96) A.M. Hashim, S. Kasai, H. Hasegawa and T. Hashizume, "Plasma Waves in AlGaAs/GaAs 2DEG and Their Interactions with Electromagnetic Waves up to THz Region", The 3rd International Symposium on Ubiquitous Knowledge Network Environment, Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies, Sapporo, Japan, Feb. 27-Mar. 1, 2006.


97) S. Kasai, M. Yumoto and H. Hasegawa, "Characterization of Switching Power Dissipation in Schottky Wrap Gate-based Quantum Nanodevices for Their Digital System Applications", 2006 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanoelectronics for Meme-Media-Based ITs (IV)", Sapporo, Japan, Feb. 9-10, 2006.


98) R. Jia, S. Kasai and H. Hasegawa, "Side-gating effects in GaAs-based quantum wire transistors and its suppression by surface passivation using Si interface control layer", 2006 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanoelectronics for Meme-Media-Based ITs (IV)", Sapporo, Japan, Feb. 9-10, 2006.


99) A.M. Hashim, S. Kasai, H. Hasegawa and T. Hashizume, "Plasma wave interactions in GaAs interdigital-gated HEMT devices from microwave up to THz frequencies", 2006 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanoelectronics for Meme-Media-Based ITs (IV)", Sapporo, Japan, Feb. 9-10, 2006.


100) T. Tamura, I. Tamai, S. Kasai, T. Sato, H. Hasegawa and T. Hashizume, "Investigation of Selectively MBE Grown GaAs Hexagonal Nanowire Networks for High-Density Integration of Hexagonal BDD Quantum Devices", 2006 RCIQE International Seminar for 21st Century COE Program, "Quantum Nanoelectronics for Meme-Media-Based ITs (IV)", Sapporo, Japan, Feb. 9-10, 2006.


101) R. Jia, N. Shiozaki, S. Kasai and H. Hasegawa, "Suppression of Device Interference Effects in GaAs Nanodevices by Surface Passivation using Si Interface Control Layer", The 33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI33), Florida, USA, Jan. 9-15, 2006.


102) J. Kotani, M. Kaneko, S. Kasai, H. Hasegawa and T. Hashizume, "Large Reduction of Leakage Currents in AlGaN Schottky Interfaces by a Novel Surface Control Process and Its Mechanism", The 33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI33), Florida, USA, Jan. 9-15, 2006. 


103) S. Kasai, Y. Shiratori, T. Nakamura, and T. Tamura, "Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime", 2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006), Sendai, Japan, July 3 – 5, 2006.


104) T. Tamura, J. Kotani, S. Kasai, and Tamotsu Hashizume, “Schottky Wrap Gates Applied AlGaN/GaN HEMTs”, 2007 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices", Sapporo, Japan, Feb. 8-9, 2007.


105) S. Kasai, T. Nakamura, H.-Q. Zhao and Y. Shiratori, “Topological Implementation of Logic Circuitry on GaAs-based Nanowire Network Utilizing Decision Diagram Technique”, 2007 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices", Sapporo, Japan, Feb. 8-9, 2007.


106) H.-Q. Zhao, T. Nakamura, S. Kasai, and T. Hashizume, “Fabrication and characterization of active and sequential circuits on WPG-controlled GaAs hexagonal nanowire networks”, The 4th International Symposium on Ubiquitous Knowledge Network Environment, Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies, 21COE Program, Sapporo, Japan, Mar. 5-7, 2007.


107) S. Kasai, “Ultra-small and Low-power Circuits Integrating III-V Semiconductor Quantum Nanodevices for Intelligent Quantum Nano-chips (IQCs)”, The 4th International Symposium on Ubiquitous Knowledge Network Environment, Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies, 21COE Program, Sapporo, Japan, Mar. 5-7, 2007.


108) S. Kasai, T. Nakamura and Y. Shiratori, "Topological Implementation of Logic Functions on GaAs-based Nanowire Networks by Decision Diagram Technique", 2007 Nano and Giga Challenges Conference (NGC2007), Arizona, USA, Mar. 12-16, 2007.


109) H.-Q. Zhao, T. Nakamura, S. Kasai and T. Hashizume, "Active and Sequential Circuits on WPG-controlled GaAs Hexagonal Nanowire Networks for Hexagonal BDD-based Digital Systems", The 7th Topical Workshop on Heterostructure Microelectronics (TWHM2007), Kisarazu, Japan, Aug. 21-24, 2007


110) Y. Shiratori and S. Kasai, "Effect of Size Reduction on Operation Temperature and Switching Power in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors", 2007 International Conference on Solid State Devices and Materials (SSDM2007), Tsukuba, Japan, Sept. 17-21, 2007.


111) T. Tamura, J. Kotani, S. Kasai and T. Hashizume, "Highly Thermal Stability of Drain Current in Multi-Mesa-Gate AlGaN/GaN HEMTs", The 34th International Symposium on Compound Semiconductors (ISCS2007), Kyoto, Japan, Oct. 15-18, 2007.


112) S. Kasai, T. Nakamura, S.F. Abd Fadzli and Y. Shiratori, "Study on Nonlinear Electrical Characteristics in Gaas-Based Three-Branch Nanowire Junctions Controlled By Schottky Wrap Gates", 20th International Microprocesses and Nanotechnology Conference (MNC2007), Kyoto, Japan, Nov. 5-8, 2007.


113) S. Kasai, "GaAs-nanowire-network-based functional devices for information processing", 2008 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices", Sapporo, Japan, March 3-4, 2008.


114) H.-Q. Zhao, S. Kasai, T. Nakamura and T. Hashizume, "Fabrication and characterization of active and sequential circuits on WPG controlled GaAs hexagonal nanowire networks", 2008 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices", Sapporo, Japan, March 3-4, 2008.


115) Y. Shiratori, S. F. A. Rahman, S. Kasai, "Impact of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Controlled Quantum Wire Transistors", 2008 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices", Sapporo, Japan, March 3-4, 2008.


116) H.-Q. Zhao, S. Kasai, and T. Hashizume, "2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network", 2008 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconducter Devices (AWAD2008), Sapporo, Japan, July 9-11, 2008.


117) A. R. Shaharin Fadzli, D. Nakata, Y. Shiratori, and S. Kasai, "Realization of Boolean Logic Gates based on GaAs Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates", 21st International Microprocesses and Nanotechnology Conference, Fukuoka, Japan, Octorber 27-30, 2008.


118) S. Kasai, H.-Q. Zhao, Y. Shiratori, A. R. Shaharin Fadri, and D. Nakata, "Design and Implementation of Functional Nanodevices and Integrated Circuits on Gate Controlled GaAs Nanowires and Their Networks", NSFC-JSPS Joint Research Project Symposium on "Novel-Function Nano-Integrated Circuits Based on Semiconductor Low Dimensional Structures", Beijing, China, November 27, 2008.


119) H.-Q. Zhao, S. Kasai, Y. Shiratori and T. Hashizume, "BDD-based 2-bit Arithmetic Logic Unit on GaAs-based Regular Nanowire Network with Hexhagonal Topology Controlled by WPG", 2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices", Sapporo, Japan, March 2-3, 2009.


120) Y. Shiratori, A. R. Shaharin Fadzli, D. Nakata and S. Kasai, "Investigation on Conduction Controllable and Preservable Nanowire Networks of Realization of Reconfiguration BDD Logic Circuits", 2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices", Sapporo, Japan, March 2-3, 2009.


121) S. Kasai, Y. Shiratori, K. Miura, and N.-J. Wu, "Multi-path switching device utilizing a multi-terminal nanowire junction for MDD-based logic circuit", 39th International Symposium on Multiple-Valued Logic, Naha, Japan, May 21-23, 2009. pp.331-336.


122) W.-C. Zhang, N.-J. Wu, S. Kasai, and T. Hashizume, "Multiple-valued Logic Gates using Asymmetric Single-electron Transistors", 39th International Symposium on Multiple-Valued Logic, Naha, Japan, May 21-23, 2009. pp. 337-342.


123) S. Kasai, T. Asai, Y. Shiratori and D. Nakata, "Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network", 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009), Busan, Korea, June 24-26, 2009.


124) S. Kasai, Y. Shiratori and K. Miura, "BDD-based Reconfigurable Logic Circuit on Nanowire Network", 8th Topical Workshop on Heterostructure Microelectronics (TWHM2009), Nagano, Japan, Aug. 26-29, 2009.


125) Y. Shiratori, K. Miura and S. Kasai, "Design and Fabrication of BDD-based Reconfigurable Logic Circuit on GaAs Nanowire Network", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai, Japan, Oct. 7-9, 2009.


126) D. Nakata, H. Shibata, Y. Shiratori and S. Kasai, "Analysis on Voltage-Transfer Characteristics In GaAs-Based Three-Branch Nanowire Junctions controlled by Schottky Wrap Gates", International Microprocesses and Nanotechnology Conference (MNC2009), Sapporo, Japan, Nov. 26-29, 2009.


127) F. A. R. Shaharin, D. Nakata, Y. Shiratori, and S. Kasai, "Logic Gates Utilizing Schottky Gate-Controlled Three-Branch GaAs Nanowire Junctions", ESciNano Annual Symposium 2009, Johor, Malaysia, Nov. 30-Dec.1, 2009.


128) S. Kasai, "STOCHASTIC RESONANCE IN NANODEVICE PARALLEL SYSTEMS," 2009 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS 2009), Kanazawa, Japan, Dec. 7-9, 2009. pp.363-366.


129) Y. Shiratori, K. Miura, and S. Kasai, "Characteristics of Reconfigurable BDD Logic Circuits using GaAs Nanowire Network", 2010 International RCIQE/CREST Joint Workshop, Sapporo, Japan, March 1-2, 2010.


130) S. Kasai, "Fluctuation-enhanced response in nanowire-based electron devices and their networks", 2010 International RCIQE/CREST Joint Workshop, Sapporo, Japan, March 1-2, 2010.


131 S. Kasai, Y. Shiratoria, K. Miuraa, Y. Nakanoa, T. Muramatsu, "Control of Stochastic Resonance in GaAs-based Nanowire FETs", The 37th International Symposium on Compound Semiconductors (ISCS2010), Takamatsu Symbol Tower, Kagawa, Japan, May 31 - June 4, 2010.


132) S. Kasai, Y. Shiratori, K. Miura, H. Shibata, Y. Nakano, T. Muramatsu, "THz Wave Detection by Gate-controlled GaAs Nanowire Devices", The 15th optoelectronics and communications conference (OECC2010), Sapporo, Japan, July 5-9, 2010.


133) Y. Shiratori, K. Miura, and S. Kasai, "Fabrication of programmable nano switch arrays on GaAs nanowire networks for reconfigurable BDD logic circuits", 36th international conference on micro & nano engineering, Genova, Italy, Sep. 16-22, 2010.


134) H. Shibata, Y. Shiratori and S. Kasai, "Fabrication of a Nanowire-based Flip-fop Circuit using Gate-controlled GaAs Three-branch Nanowire Junctions", 23rd International Microprocesses and Nanotechnology Conference, Fukuoka, Japan, Nov. 9-12, 2010.


135) K. Miura, Y. Shiratori, and S. Kasai, "Low-frequency Noise in GaAs Nanowire FETs controlled by Schottky Wrap Gate", 23rd International Microprocesses and Nanotechnology Conference (MNC2010), Fukuoka, Japan, Nov. 9-12, 2010.


136) S. F. A. Rahman, S. Kasai, A. M. Hashim, and V. K. Arora, "Fabrication and Characterization of Graphene-Based Three- Branch Nanojunction Device", 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2011), Daejeon, Korea, June 29 – July 1, 2011.


137) T. Kiso, T. Maemoto, K. Nishisaka, S. Sasa, S. Kasai, and M. Inoue, " Transport Properties in InAs based Ballistic Rectifiers and Self-Switching Diodes", 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 17), Santa Barbara, California, USA, August 8-12, 2011,


138) S. Kasai, Y. Tadokoro, A. Ichiki, Y. Shiratori, and K. Miura, "Noise-Color Dependence of Stochastic Resonance in a GaAs-Based Nanowire FET Network", 9th Topical Workshop on Heterostructure Microelectronics (TWHM2011), Gifu, Japan, August 28 - 31, 2011.


139) T. Muramatsu, K. Miura, Y. Shiratori and S. Kasai, "Low-frequency Noise in GaAs Nanowire MISFETs having SiNx Gate Insulator", 24th International Microprocesses and Nanotechnology Conference (MNC2011), Kyoto, Japan, Nov. 9-12, 2011. 


140) S. Kasai, Y. Shiratori and K. Miura, "Analysis on Dynamic Behavior of Thermally Driven Single-electron Stochastic Resonance", 24th International Microprocesses and Nanotechnology Conference (MNC2011), Kyoto, Japan, Nov. 9-12, 2011.


141) S. F. A. Rahman, A. M. Hashim, and S. Kasai, "Improvement of Optical Graphene Layer Identification for Large-area Characterization", 24th International Microprocesses and Nanotechnology Conference (MNC2011), Kyoto, Japan, Nov. 9-12, 2011. 


142) T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, and M. Inoue, "Fabrication and Transport Properties in InAs-based Self Switching Nano-diodes", 24th International Microprocesses and Nanotechnology Conference (MNC2011), Kyoto, Japan, Nov. 9-12, 2011. 


143) Y. Nakano, T. Tanaka, and S. Kasai, "GaAs Nanowire Charge-Coupled Device for Synchronized Signal Transfer in A Nanowire Network", International Workshop on Quantum Nanostructures and Nanoelectronics (QNN2011), Tokyo, Japan, Oct. 3-4, 2011.


144) T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue, "Electron transport properties in self switching nano-diodes", APS March Meeting 2012, Boston, USA, February 27-March 2, 2012. 


145) S. Kasai, "Electronic Stochastic Resonance in Semiconductor Nanodevices and Their Networks", 2012 RCIQE International Workshop for Green Electronics, Sapporo, Japan, March 5-6, 2012.


146) Y. Nakano, T. Tanaka, and S. Kasai, "Dynamic Charge Transfer Characteristics of a GaAs-based Nanowire CCD", 2012 RCIQE International Workshop for Green Electronics, Sapporo, Japan, March 5-6, 2012.


147) T. Tanaka, Y. Nakano, T. Muramatsu, and S. Kasai, "Fabrication and Characterization of Asymmetric-Gate GaAs Nanowire Transistors for Electrical Brownian Ratchet", 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012), Naha, Japan, June 27 - 29, 2012.


148) S. N. Yanushkevich, G. Tangim, S. Kasai, S. E. Lyshevski, V. P. Shmerko, "Design of nanoelectronic ICs: noise-tolerant logic gates based on loopy BDD schemes", 12th International Conference on Nanotechnology (IEEE NANO 2012), Birmingham, UK, 20-23 Aug. 2012.


149) T. Mohamed, S. N. Yanushkevich, and S. Kasai, "Fault-Tolerant Nanowire BDD circuits", The First International Workshop on Information Physics and Computing in Nano-scale Photonics and Materials (IPCN), University of Orléans, France, September 7, 2012.


150) T. Tanaka, Y. Nakano and S. Kasai, "Fabrication and Characterization of A GaAs Nanowire Device Having Multiple Asymmetric Gates for Electrical Brownian Ratchet", 25th International Microprocesses and Nanotechnology Conference (MNC2012), Kobe, Japan, Oct.30-Nov. 2, 2012.


151) M. Sato and S. Kasai, " Characterization of GaAs-based three-branch nanowire junction devices by light-induced local resistance modulation method", 25th International Microprocesses and Nanotechnology Conference (MNC2012), Kobe, Japan, Oct.30-Nov. 2, 2012.


152) Y. Kimura, Y. Sun, T. Maemoto, S. Sasa, S. Kasai, and M. Inoue, "Rectification Effects of ZnO-based Transparent Nano-diodes on Glass and Flexible Plastic Substrates", 25th International Microprocesses and Nanotechnology Conference (MNC2012), Kobe, Japan, Oct.30-Nov. 2, 2011.


152) S. Kasai, T. Tanaka, and M. Sato, "Design and Formation of Multiple Asymmetric Potential in a GaAs-based Nanowire for Electron Brownian Ratchet", 2012 Workshop on Innovative Devices and Systems (WINDS), Kohala, Hawaii, USA, Dec. 2 - 7, 2012.


153) X. Yin and S. Kasai, "Graphene-based Three-branch Nano-junction (TBJ) Logic Inverter", The 40th International Symp. on Compound Semiconductors (ISCS2013), Kobe, Japan, May 19-23, 2013. 


152) R. Kuroda and S. Kasai, "GaAs Nanowire FET-integrated Threshold Logic Circuit", 22nd International Workshop on Post-Binary ULSI Systems, Toyama International Conference Center, Toyama, Japan, May 21, 2013.


153) G. Tangim, S. Yanushkevich, S. Kasai, and V. Shmerko, "Noise-Tolerant Model of a Ternary Inverter Based on Markov Random Field", IEEE 43rd International Symposium on Multiple-Valued Logic (ISMVL-2013), Toyama, Japan, May 21-24, 2013. 


154) M. Sato, X. Yin, and S. Kasai, "Study on the nonlinear electrical characteristics in the GaAs-based three-branch nanowire junction devices", 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2013), Korea University, Seoul, Korea, June 26-28, 2013.


155) Y. Tadokoro, S. Kasai, and A. Ichiki, "A proposal of the simple non-dynamical delay network exhibiting stochastic resonance", The First International Conference on Nanoenergy, Perugia, Italy, July 10-13 2013.


156) S. Kasai, T. Tanaka, and Y. Abe, "Electron Brownian ratchet using a GaAs nanowire with multiple asymmetric gates", The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), July 22 - 26, 2013, Matsue, Japan.


157) Y. Imai, M. Sato, T. Tanaka, and S. Kasai, "Study on Weak Biological Signal Detection Utilizing Stochastic Resonance in a GaAs- based Nanowire FET", 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Japan, Nov. 5-8, 2013.


158) M. Sato, X. Yin, and S. Kasai, "Surface Dependence of Nonlinear Characteristic in GaAs-based Three-branch Nanowire Junctions", The 41st International Symposium on Compound Semiconductor (ISCS), Montpellier, France, May 11-15, 2014.


159) M. Sato, X. Yin, R. Kuroda, and S. Kasai, "Surface dependence of nonlinar electrical characteristics in GaAs-based three-branch nanowire junction devices", 6th IEEE International Nanoelectronics Conference, Sapporo, Japan, July 28-31, 2014.


160) X. Yin, M. Sato, and S. Kasai, "Effect of metal-graphene contact on onlinear characteristics of graphene-based three-branch nano-junction device", 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2014), Kanazawa, Japan, July 1-3, 2014.


161) S. Inoue, R. Kuroda, M. Sato, and S. Kasai, "Detection of Molecular Charge Dynamics through Current Noise in A GaAs-based Nanowire FET", International Conference on Solid State Materials and Devices (SSDM2014), Tsukuba, Japan, Sep. 8-11, 2014.


162) Y. Abe, T. Tanaka and, S. Kasai, "Structural Parameter Dependence of Directed Current in GaAs Nanowire-Based Electron Brownian Ratchet Device", 25th International Microprocesses and Nanotechnology Conference (MNC2014), Fukuoka, Japan, November 4-7, 2014.


163) M. Sato, X. Yin, R. Kuroda, S. Inoue, and S. Kasai, "Detection of Surface Charge Dynamics in a GaAs-based Nanowire by Local Surface Potential Control", 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015), Niigata, Japan, June 16-19, 2015.


164) X. Yin, M. Sato, and S. Kasai, "Implementation of A Complete Set of Logic Gates Using A Graphene-based Three-branch Nano-junction Device", The 42nd International Symposium on Compound Semiconductors (ISCS2015), Santa Barbara, California, USA, June 28-July 2, 2015.


165) R. Kuroda, M. Sato, and S. Kasai, "Development of digital wet etching technique for high-precision GaAs-based nanostructure formation", 23rd Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2015), Jeju, Korea, June 29-July 1, 2016.

 

166) S. Kasai, S. Inoue, S. Okamoto, R. Kuroda, and M. Sato, "Detection and control of charge state in single molecules using a semiconductor nanowire FET", International Workshop on Molecular Architectonics, Shiretoko, Japan, Aug. 3-6, 2015.


167) X. Yin, P. Liu, H. Tanaka, S. Kasai, "Electrical characterization of three-branch nano-junction device based on graphene nanoribbon crossbar", International Workshop on Molecular Architectonics, Shiretoko, Japan, Aug. 3-6, 2015.


168) M. Akai-Kasaya, A. Setiadi, H. Fujii, S. Kasai, Y. Kanai, K. Matsumoto, Y. Kuwahara, "Molecular noise sources incorporated into carbon nanotube circuits aiming the emergence of collective stochastic resonance", International Workshop on Molecular Architectonics, Shiretoko, Japan, Aug. 3-6, 2015.


169) A. Setiadi, H. Fujii, M. Akai-Kasaya, S. Kasai, Y. Kanai, K. Matsumoto, and Y. Kuwahara, "Molecular characterization using current noise measurement of carbon nanotubes deviceat room temperature", International Workshop on Molecular Architectonics, Shiretoko, Japan, Aug. 3-6, 2015.


170) M. Sato, X. Yin, R. Kuroda, and S. Kasai, "Detection and characterization of local surface charge dynamics in a GaAs-based nanowire through metal-tip-induced current noise", 11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015), Takayama, Gifu, Aug. 23-26, 2015.


171) M. Aono, S.-J. Kim, M. Wakabayashi, S. Kasai, H. Miwa, and M. Naruse, "Amoeba-inspired Spatiotemporal Dynamics for Physically Implemented Satisfiability Problem Solvers", Pragmatics of SAT 2015 (POS15), Austin, Texas, USA, Sep. 23, 2015.


172) K. Shirata, S. Kasai, T. Oya, Y. Hagiwara, S. Kaeriyama, and H. Nakamura, "Robust and High Sensitive Myoelectric Signal Detection Utilizing Stochastic Resonance With Carbon Nanotube Composite Paper-based Surface Electrodes", 2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan, Sep. 27-30, 2015.


173) R. Kuroda, M. Sato, and S. Kasai, "Development of High-Precision Digital Wet Etching Technique for GaAs-Based Nanostructure Formation", 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama, Japan, Nov. 10-13, 2015.


174) H. Tanaka, P. Liu, T. Fujiwara, S. Kasai, X. Yin, T. Yamada, R. Negishi, Y. Kobayashi, M. Fukumori, and T. Ogawa, "Fabrication and Electrical Porperties of Unzipped Single- Layer Graphene Nanoribbon", 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama, Japan, Nov. 10-13, 2015.


175) T. Asai and S. Kasai, "Neuromorphic Circuits and Devices Exploiting Noise and Fluctuations", 2015 International Symposium on Nonlinear Theory and its Applications (NOLTA2015), Hong Kong, China, Dec. 1-4, 2015


176) R. Wakamiya, S. Kasai, M. Aono, M. Naruse, and H. Miwa, "Amoeba-inspired computing system utilizing charge dynamics in a capacitor network with spatiotemporal fluctuation", The International Chemical Congress of Pacific Basin Societies 2015 (Pacifichem 2015), Honolulu, Hawaii, USA, Dec. 15-20, 2015.


177) A. Setiadi, H. Fujii, M. Akai-Kasaya, S. Kasai, Y. Kanai, K. Matsumoto, and Y. Kuwahara, "Molecular characterization using current noise measurement of carbon nanotubes device", The International Chemical Congress of Pacific Basin Societies 2015 (Pacifichem 2015), Honolulu, Hawaii, USA, Dec. 15-20, 2015.


178) P. Liu, S. Kasai, X. Yin, T.-K. Yamada, T. Ogawa, M. Fukumori, and H. Tanaka, "Fabrication and electrical properties of X- and Y- structures of unzipped single- layer graphene nanoribbons", The International Chemical Congress of Pacific Basin Societies 2015 (Pacifichem 2015), Honolulu, Hawaii, USA, Dec. 15-20, 2015.


179) K. Sasaki, R. Kuroda, X. Yin, M. Sato, T. Ogawa, and S. Kasai, “Fabrication and Characterization of A Multiple Gate Nanowire FET for Detecting Spatially Distributed Molecular Charges”, The 43rd International Symposium on Compound Semiconductor (ISCS2016), Toyama, Japan, June 26-30, 2016.


180) R. Kuroda, M. Sato, and S. Kasai, "Atomic-level GaAs digital wet etching using a computer-controlled multiple spraying system", 35th Electronic Materials Symposium (EMS-35), Biwako, Shiga, Japan, July 6-8, 2016.


181) S. Okamoto, M. Sato, K. Sasaki and S. Kasai, "Detection of Charge State of Single Molecules Using A GaAs- Based Nanowire Enhanced by Metal-Molecule Capacitive Coupling", 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, Japan, Nov. 8-11, 2016.


182) R. Kuroda, X. Yin, and S. Kasai, "Nanoscale Surface Structural Evolution in GaAs Digital Wet Etching with Sub-second Oxidation and Dissolution Process", 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, Japan, Nov. 8-11, 2016.


183) Y. Inden, K. Shirata, and S. Kasai, "Robust Detection of Surface Myoelectric Signal Using a Nonlinear Device Network for Intuitive Man-Machine Interface", 2016 International Symposium on Nonlinear Theory and Its Applications (NOLTA2016) Yugawara, Japan, November 27th–30th, 2016.



4Books


1) S. N. Yanushkevich, S. Kasai, G. Tangim, A. H. Tran, T. Mohamed, and V. P. Smerko, "Introduction to Noise-Resilient Computing", Synthesis Lectures on Digital Circuits and Systems, Morgan & Claypool publishers (152 pages) (2013).


2) S. Kasai, H.-Q. Zhao, Y. Shiratori, T. Mohamed, and S. N. Yanushkevich, "Boolean Logic Circuits on Nanowire Networks and Related Technologies", Nanophotonic Information Physics, ed. M. Naruse, Springer (2014) pp.115-144. 


3) S. Kasai, R. Wakamiya, Y. Abe, M. Aono, M. Naruse, H. Miwa, and S.-J. Kim, "Physarum-Inspired Electronic and Nanoelectronic Computing Systems", Advances in Physarum Machines -Sensing and Computing with Slime Mould-, Emergence, Complexity and Computation Vol. 21, Ed. A. Adamatzky, Springer, Switzerland (2015) pp.109-132.