Some reprints of the papers can be downloaded from [[HUSCAP:http://eprints.lib.hokudai.ac.jp/index.en.jsp]] (Hokkaido University collection of scholarly and academic papers).

#contents

*topics [#p2aa286f]
-[[covers::http://rihog4.rciqe.hokudai.ac.jp/~motohisa/covers.html]]
++APL cover of http://apl.aip.org/apl/covers/88_13.jsp
++cover of Oyo Buturi http://www.jsap.or.jp/ap/2006/ob7503/cont7503.html
++APL cover of http://apl.aip.org/apl/covers/87_9.jsp
++APL cover of http://apl.aip.org/apl/covers/87_3.jsp
++APL cover of http://apl.aip.org/apl/covers/83_13.jsp

*2007 [#s058d98d]
+Noboru Ooike,Junichi Motohisa,Takashi Fukui: "Drain-Current Deep Level Transient Spectroscopy Study of Carrier Emission Process from InAs Quantum Dots in GaAs Narrow-Wire Field Effect Transistors", Jpn. J. Appl. Phys. Vol.46 (2007) No.7A (to be published)
+K. Tsumura, S. Nomura, J. Motohisa, P. Mohan, and T. Fukui: "Aharonov-Bohm oscillations in photoluminescence from charged exciton in quantum tubes", [[Jpn. J. Appl. Phys.  Vol.46 (2007) No.18  pp.L440 - L443:http://jjap.ipap.jp/link?JJAP/46/L440/]].
+B. Pal, K. Goto, M. Ikezawa, Y. Masumoto, P. Mohan, J. Motohisa, T. Fukui: 
"Time- and Spectrally-Resolved PL Study of a Regular Array of InP/InAs/InP Core-multishell Nanowires", [[arXiv:cond-matt/0702127 (2007):http://arxiv.org/abs/cond-mat/0702127]].
+L. Yang, J. Motohisa, J. Takeda, K. Tomiyoka and T. Fukui: "Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence", Nanotechnology 13 (2007) 105302.
+L. Yang, J. Motohisa, J. Takeda and T. Fukui: "Photonic crystal slabs with hexagonal air holes fabricated by selective area metal organic vapor phase epitaxy",
Sensors and Actuators A: Physical 133 (2007) 288-293.
+Keitaro Ikejiri, Jinichiro Noborisaka, Shinjiroh Hara, Junichi Motohisa and Takashi Fukui: "Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE", [[ J. Crsyt. Growth Volume 298, pp.616-619 (2007):http://dx.doi.org/10.1016/j.jcrysgro.2006.10.179]].
+K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa and T. Fukui: "Growth of highly uniform InAs nanowire arrays by selective-area MOVPE", [[J. Cryst. Growth 298, pp.644-647 (2007):http://dx.doi.org/10.1016/j.jcrysgro.2006.10.183]].
+Shinjiroh Hara, Junichi Motohisa and Takashi Fukui: "Self-assembled formation of ferromagnetic MnAs nanoclusters on GaInAs/InP (111) B layers by metal-organic vapor phase epitaxy", [[J. Cryst. Growth 298, pp.612-615 (2007).:http://dx.doi.org/10.1016/j.jcrysgro.2006.10.178]]

*2006 [#z257965a]
+J. Motohisa and T. Fukui: "Catalyst-free selective area MOVPE of semiconductor nanowires", [[Proceedings of SPIE 6370, 63700B (2006):http://dx.doi.org/10.1117/12.686037]].
+L. Yang, J. Motohisa, J. Takeda, K. Tomioka, and T. Fukui: "Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy", [[Appl. Phys. Lett. 89, 203110 (2006):http://dx.doi.org/10.1063/1.2372710]].
+Tamura, H., Nomura, S.; Yamaguchi, M.; Akazaki, T.; Takayanagi, H.; Mohan, P.; Motohisa, J.; Fukui, T. :"Magneto-optics of GaAs quantum wire lattices grown by selective-area MOVPE", Journal of Physics: Conference Series, v 38, n 1, 2006, p 130-3
+Premila Mohan, Junichi Motohisa and Takashi Fukui:" Fabrication of InP/InAs/InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy", [[Appl. Phys. Lett. 88, 133105 (2006).:http://dx.doi.org/10.1063/1.2189203]] (download from [[HUSCAP:http://hdl.handle.net/2115/8416]]) (also at [[Virtual Journal of Nanoscience and Technology, Volume 13, Issue 14:http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=13&Issue=14]])
+Junichi Motohisa and Takashi Fukui: "Semiconductor Nanowires and Their Application to Nanodevices (in Japanese)", [[Oyo Buturi 75, 296-302 (2006).:http://www.jsap.or.jp/ap/2006/ob7503/p750296.html]]
+Premila Mohan, Junichi Motohisa, and Takashi Fukui: "Realization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires", [[Appl. Phys. Lett. 88, 013110 (2006).:http://dx.doi.org/10.1063/1.2161576]] (download from [[HUSCAP:http://hdl.handle.net/2115/8418]]) (also at [[Virtual Journal of Nanoscience and Technology, Volume 13, Issue 2:http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=13&Issue=2]])

*2005 [#z81d7c2f]
+Lin Yang, Junichi Motohisa, Junichiro Takeda, and Takashi Fukui: "Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes: selective area metal organic vapor phase epitaxy", [[Optics Express Vol. 13, No. 26, pp.10823-10832 :http://www.opticsexpress.org/abstract.cfm?URI=OPEX-13-26-10823]]
+D. Nataraj, N. Ooike, J. Motohisa, and T. Fukui:"Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy", [[Appl. Phys. Lett. 87, 193103 (2005).:http://dx.doi.org/10.1063/1.2120905]] (download from [[HUSCAP:http://hdl.handle.net/2115/5504]]) (also at [[Virtual Journal of Nanoscience and Technology, Volume 12, Issue 20:http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=12&Issue=20]])
+Junichiro Takeda, Masashi Akabori, Junichi Motohisa, Richard N?tzel and Takashi Fukui:"Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs(111)B substrates using flow-rate modulation mode", [[Nanotechnology 16, pp.2954-2957 (2005):http://www.iop.org/EJ/abstract/0957-4484/16/12/038]]
+Premila Mohan, Junichi Motohisa and Takashi Fukui: "Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays", [[Nanotechnology 16, pp. 2903-2907 (2005).:http://www.iop.org/EJ/abstract/0957-4484/16/12/029/]]
+J. Noborisaka, J. Motohisa, S. Hara, and T. Fukui: "Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy", [[Appl. Phys. Lett. 87, 093109 (2005).:http://dx.doi.org/10.1063/1.2035332]] (download from [[HUSCAP:http://hdl.handle.net/2115/5503]]) (see cover of APL at http://apl.aip.org/apl/covers/87_9.jsp ) (also at [[Virtual Journal of Nanoscience and Technology, Volume 12, Issue 10:http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=12&Issue=10]])
+Y. Miyoshi, F. Nakajima, J. Motohisa, and T. Fukui:"A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy", [[Appl. Phys. Lett. 87, vol. 3, 033501 (2005). :http://dx.doi.org/10.1063/1.1992665]] (download from [[HUSCAP:http://hdl.handle.net/2115/5505]]) (see cover of APL at http://apl.aip.org/apl/covers/87_3.jsp ) (also at [[Virtual Journal of Nanoscience and Technology, Volume 12, Issue 4:http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=12&Issue=4]])
+Jinichiro Noborisaka, Junichi Motohisa, and Takashi Fukui: "Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy", [[Appl. Phys. Lett. 86, 213102 (2005).:http://dx.doi.org/10.1063/1.1935038]] (download from [[HUSCAP:http://hdl.handle.net/2115/5506]]) (also at [[Virtual Journal of Nanoscience and Technology, Volume 11, Issue 21:http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=11&Issue=21]])
+Lin Yang, Junichi Motohisa, and Takashi Fukui: 
"Suggested procedure for the use of the effective-index method for high-index-contrast photonic crystal slabs", Opt. Eng. 44, 078002 (2005).
+[[L. Yang, J. Motohisa, and T. Fukui:"Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides," Jpn. J. Appl. Phys. Vol. 44, No. 4B, 2005, pp. 2531-2536 (2005).:http://jjap.ipap.jp/link?JJAP/44/2531/]]
+S. Hara, J. Motohisa, J. Noborisaka, J. Takeda, and T. Fukui:
"Photoluminescnce from single hexagonal nano-wire grown by selective area MOVPE,"
Inst. Phys. Conf. Ser. No 184, pp.393-398 (2005).

*2004 [#j7235eff]
+L. Besombes, J. J. Baumberg, and J. Motohisa: "Polarization-dependent Ultrafast Rabi Oscillations in Single InGaAs Quantum Dots,"
Semiconductor Science and Technology, 19 (4), S148-S151 (2004).
+Junichiro Takeda, Masaru Inari, Junichi Motohisa and Takashi Fukui:
"Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE,"
Journal of Crystal Growth, Volume 272, 1-4, pp. 570-575 (2004).
+N, Ooike, J. Motohisa, and T. Fukui: 
"MOVPE selectively grown GaAs nano-wires with self-aligned W side gate,"
Journal of Crystal Growth, v 272, n 1-4, p 175-179 (2004). 
+J. Motohisa J. Noborisaka, J. Takeda, M. Inari, and T. Fukui:
"Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates,"
[[Journal of Crystal Growth, v 272, n 1-4, p 180-185 (2004).:http://dx.doi.org/10.1016/j.jcrysgro.2004.08.118]] (download from [[HUSCAP:http://hdl.handle.net/2115/5525]]) 
+N. Ooike, J. Motohisa, and T. Fukui
"Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE,"
Thin Solid Films, v 464-465, p 220-224 (2004).
+J. Motohisa, J. Takeda, M. Inari, J. Noborisaka, and T. Fukui
"Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE,"
[[Physica E, v 23, n 3-4, p 298-304 (2004).:http://dx.doi.org/10.1016/j.physe.2003.11.279]] (download from [[HUSCAP:http://hdl.handle.net/2115/5526]]) 
+Premila Mohan ,Junichi Motohisa , and Takashi Fukui
"Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy,"
[[Applied Physics Letters Volume 84, Issue 14, pp. 2664-2666 (2004).:http://dx.doi.org/10.1063/1.1697645]] (download from [[HUSCAP:http://hdl.handle.net/2115/5508]]) 
+M. Inari, J. Takeda, J. Motohisa, and T.Fukui: 
"Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals,"
Physica E Vol.21, No.2--4, pp.620--624 (2004). 
+J. J. Motohisa Takeda, M. Inari, and T. Fukui: "Growth and optical properties of 2D photonic crystals based on hexiagonal GaAs/AlGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy," Mat. Res. Soc. Proc. Vol. 797, W.6.6.1-W.6.6.6 (2004).
+H. J. Kim, J. Motohisa and T. Fukui: "Formation of GaAs wire structures and position controlled In$_{0.8}$Ga$_{0.2}$As quantum dots on SiO$_{2}$-patterned vicinal (001) GaAs substrate," [[Nanotechnology Vol.15, pp.292-296 (2004).:http://www.iop.org/EJ/abstract/-search=10652251.3/0957-4484/15/3/011]]

*2003 [#x1700424]
+F. Nakajima,Y. Miyoshi, J. Motohisa and T. Fukui: "Single-electron AND/NAND logic circuits based on a self-organized dot network," [[Appl. Phys. Lett. Vol. 83, No.13, pp.2680-2682 (2003).:http://dx.doi.org/10.1063/1.1614845]] (download from [[HUSCAP:http://hdl.handle.net/2115/5518]]) (see cover of APL at http://apl.aip.org/apl/covers/83_13.jsp )
+M. Akabori, J. Takeda, J. Motohisa and T. Fukui: "InGaAs nano-pillar array formation on partially masked InP (111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application," [[Nanotechnology Vol.14, No.10, pp.1071-1074 (2003).:http://www.iop.org/EJ/abstract/-search=10652251.4/0957-4484/14/10/303]]
+L. Besombes, J. J. Baumerg and J. Motohisa: "Excited States in Optically Gated Charged Single InAs Quantum Dots," physica status solidi (c) Vol.0, No.5, pp.1501-1505 (2003).
+P. Mohan, F. Nakajima, M. Akabori, J. Motohisa and T. Fukui: "Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy," [[Appl. Phys. Lett. Vol. 83, No. 4, pp. 689-691, (2003).:http://dx.doi.org/10.1063/1.1593823]] (download from [[HUSCAP:http://hdl.handle.net/2115/5519]]) 
+L. Besombes, J. J. Baumberg and J. Motohisa:"Coherent Spectroscopy of Optically Gated Charged Single InGaAs Quantum Dots," [[Phys. Rev. Lett. Vol.90, No.25, pp. 257402-1-257402-4 (2003).:http://dx.doi.org/10.1103/PhysRevLett.90.257402]] (download from [[HUSCAP:http://hdl.handle.net/2115/5520]]) 
+H. Takahashi, Y. Miyoshi, F. Nakajima, J. Motohisa and T. Fukui: "Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE," Appl. Surf. Sci. Vol. 216, No.1-4, pp. 402-406 (2003).

*2002 [#f3f9576d]
+M. Akabori, J. Takeda, J. Motohisa and T. Fukui:"Selective Area MOVPE Growth of Two-dimensional Photonic Crystals Hving an Air-hole Array and its Application to Air-bridge-type Structures,"
[[Physica E vol.13, No. 2-4, pp.446-450 (2002):http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6VMT-44Y0YTW-H&_user=117185&_coverDate=01%2F17%2F2002&_alid=33419783&_rdoc=3&_fmt=summary&_orig=search&_cdi=6159&_sort=d&_st=4&_docanchor=&_acct=C000009418&_version=1&_urlVersion=0&_userid=117185&md5=e04c9aca5997dd68737656c8e448c744]].
+W.G. van der Wiel, S. De Franceschi, J.M. Elzerman, S. Tarucha, L.P. Kouwenhoven, J. Motohisa, F. Nakajima and T. Fukui:"Two-stage Kondo effect in a quantum dot at high magnetic field," [[Physical Review Letters vol.88, No. 12, 126803 (2002).:http://dx.doi.org/10.1103/PhysRevLett.88.126803]] (download from [[HUSCAP:http://hdl.handle.net/2115/5523]]) 
+F. Nakajima, Y. Ogasawara, J. Motohisa and T. Fukui: "
Two-way current switch using Coulomb blockade in GaAs quantum dots by selective area metalorganic vapor phase epitaxy,"
[[Physica E vol.13, No. 2-4, pp.703-707 (2002):http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6VMT-45216KD-3&_user=117185&_coverDate=02%2F01%2F2002&_alid=33419783&_rdoc=1&_fmt=summary&_orig=search&_cdi=6159&_sort=d&_st=4&_docanchor=&_acct=C000009418&_version=1&_urlVersion=0&_userid=117185&md5=fcc56e09da65bb7b30a9d18d5261281a]].
+J. Motohisa, W.G. van der Wiel, J.M. Elzerman, S. De Franceschi, F. Nakajima, Y. Ogasawara, T. Fukui, and L. P. Kouwenhoven: "
Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy," [[Physica E vol.13, No. 2-4, pp.687-690 (2002).:http://dx.doi.org/10.1016/S1386-9477(02)00259-X]] (download from [[HUSCAP:http://hdl.handle.net/2115/5535]]) 
+Toyonori. Kusuhara, Fumito Nakajima, Junichi Motohisa and Takashi Fukui: "
Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth,"
Japanese Journal of Applied Physics Part 1 vol.41, No. 4B, pp.2508-2512 (2002).
+J. Motohisa, F. Nakajima, T. Fukui, W.G. van der Wiel, J.M. Elzerman, and S. De Franceschi, and L. P. Kouwenhoven: "
Fabrication and Low-Temperature Transport Properties of Selectively Grown Dual-Gated Single-Electron Transistors,"
[[Applied Physics Letters vol.80, No. 15, pp.2797-2799 (2002).:http://dx.doi.org/10.1063/1.1470246]] (download from [[HUSCAP:http://hdl.handle.net/2115/5522]]) 
+T. Ishihara, S. Lee, M. Akabori, J. Motohisa and T. Fukui: "
Dependence on In content of In$_x$Ga$_{1-x}$As quantum dots grown along GaAs multiatomic steps by MOVPE,"
[[Journal of Crystal Growth vol.237-239, No. Part 2, pp.1476-1480 (2002):http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-44VG6VN-11&_user=117185&_coverDate=01%2F06%2F2002&_alid=33419783&_rdoc=4&_fmt=summary&_orig=search&_cdi=5302&_sort=d&_st=4&_docanchor=&_acct=C000009418&_version=1&_urlVersion=0&_userid=117185&md5=fbadb46af78fa38881394703ac37e7a1]].
+Junichiro Takeda, Masashi Akabori, Junichi Motohisa and Takashi Fukui: "
"Formation of Al$_x$Ga$_{1-x}$As periodic array of micro-hexagonal pillars and air holes by selective area MOVPE,"
[[Applied Surface Science vol.190, No. 1-4, pp.236-241 (2002):http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6THY-44KVYGP-9&_user=117185&_coverDate=12%2F06%2F2001&_alid=33419783&_rdoc=6&_fmt=summary&_orig=search&_cdi=5295&_sort=d&_st=4&_docanchor=&_acct=C000009418&_version=1&_urlVersion=0&_userid=117185&md5=b7c741e52d5978b2726c69e41039e352]].
+J. Motohisa, F. Nakajima, and T. Fukui: "Formation of Nano-Scale Heterointerfaces by Selective Area Metalorganic Vapor Phase Epitaxy and Their Applications,"
Applied Surface Science vol.190, No. 1-4, pp.184-190 (2002).
+H. J. Kim, J. Motohisa and T. Fukui: "Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001)GaAs substrates," [[Applied Physics Letters vol.81, No. 27, pp.5147-5149 (2002).:http://dx.doi.org/10.1063/1.1534385]] (download from [[HUSCAP:http://hdl.handle.net/2115/5521]]) 

*Invited Talks [#p3f9fd89]
+J. Motohisa, S. Hara, and T. Fukui: ``InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy'', 2007 Virtual Conference on Nanoscale Science and Technology, 
Fayetteville, Arkansas, USA, October 21--25, 2007. 
+J. Motohisa, T. Fukui, and S. Hara: ``III-V semiconductor nanowires and nanotubes grown by selective area metalorganic vapor phase epitaxy'', Internationl Conference on Nano Science and Technology (ICN+T 2007), Stockholm, Sweden, July 2--6 (2007).
+J. Motohisa and T. Fukui: "Growth and properties of semiconductor nanowires by selective-area metalorganic vapor phase epitaxy", [[2006 International Conference on Nano Science adn Nano Technology:http://www.GJ-NST2006.org]], Gwangju, Korea (2006).
+J. Motohisa and T. Fukui: "Catalyst-free selective-area MOVPE of semiconductor nanowires", [[Optics East 2006:http://spie.org/Conferences/calls/06/oe/]], Boston, Massachusetts USA (2006)
+J. Motohisa and T. Fukui: "Growth and properties of semiconductor nanowires by Selective-Area Metalorganic Vapor Phase Epitay", 2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Tohoku University, Sendai, Japan (2006)
+J. Motohisa and T. Fukui: "Formation of Nanostructures by Selective-Area MOVPE and Their Applications", [[2005 Internaional Microprocess and Nanotechnolgy Conference:http://mnc.rcem.osaka-u.ac.jp/]], Tokyo, Japan (2005).
+J. Motohisa and T. Fukui: "Growth of Nanostructures by Selective Area MOVPE and Their Applications", International Conference on Quantum Transport in Synthetic Metals & Quantum Functional Semiconductores, 2004, Phoneix Park, Korea (2004).
+J. Motohisa, F. Nakajima and T. Fukui; "GaAs quantum dots fabricated by selective area epitaxy: from growth, physics to device application", 2nd International Conference on Semiconductor Quantum Dots, Tokyo, Japan (2002).
+J. Motohisa, "Formation of Quantum Dots and Its Application to Single Electron Devices by Selective Area MOVPE Growth", First International Workshop on Quantum Nonplanar Nanostructures and Nanoelectronics '01, Tsukuba, Japan (2001).
+Junichi Motohisa, Fumito Nakajima and Takashi Fukui: "Formation of nano-scale heterointerfaces by selective area metalorganic vapor phase epitaxy and its applications", 8th International Conference on the Formation of Semiconductor Interfaces, Sapporo, Japan (2001).
+J. Motohisa and T. Fukui: "Formation and Characterization of Semiconductor Nanostructures", International Workshop on Physics and Applications of Semiconductor Quantum Structures (1998 ASIAN SCIENCE SEMINAR), Cheju Island, Korea (1998).
+J. Motohisa, S. Hara, M. Akabori, T. Irisawa and T. Fukui: "Application of Self-Organized Multiatomic Steps on Vicinal GaAs Surfaces for Quantum Structures and Devices", Japan-China Workshop on Thin Films 1997, Tokyo, Japan (1997).

**Inivted as one of the co-authors (2002-)[#f374a027]
+K. Hiruma, S. Hara, J. Motohisa, and Takasi Fukui: ``Growth Characteristics of III-V Semiconductor Nanowires'', The Second International Conference on One-dimensional Nanomaterials (ICON 2007), Malmo, Sweden, September 26--29,  2007
+T. Fukui, S. Hara and J. Motohisa: ``III-V semiconductor hetero-structure nanowires by selective area MOVPE'', 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba, Japan, September 18--21, (2007).
+T. Fukui, Premila Mohan and J. Motohisa: ``InP and InP/InAs multi-core shell nanowires grown by selective area MOVPE'', International Conference on Modulated Semiconductor Structures, Genova, Italy, July 16--20,2007
+T. Fukui, S. Hara and J. Motohisa: `` III-V compound semiconductor nanowires grown by selective area MOVPE'', 2nd International Lund Workshop on Nanowire Growth Mechanisms, Lund, Sweden, June (2007).
+T. Fukui P. Mohan and J. Motohisa, InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy 19th International Conference on Indium Phosphide and Related Materials, Matue, Japan May, (2007)
+Takashi Fukui and Junichi Motohisa: "Epitaxial III-V Semiconductors: Nanowires and Nanotubes", Nano and Giga Challenges in Electronics and Photonics, Phoenix, Arizona, USA, March 12-16 (2007)
+Takashi Fukui and Junichi Motohisa: "Epitaxial III-V Semiconductors: Nanowires and Nanotubes" SEMICON KOREA, Seoul, Korea January 31 - Februaly 2 (2007).
+T. Fukui and J. Motohisa: "III-V semiconductor nanowires grown by metalorganic vapor phase epitaxy", NANO KOREA 2006, Seoul, Korea (2006).
+S. Hara, J. Motohisa and T. Fukui: "III-V Semiconductor Nanowires and Nanotubes Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy", (Invited) presented at the 20th AACGE-western section Conference on Crystal Growth and Epitaxy, the Stanford Sierra Camp at Fallen Leaf Lake, California, USA, June 4-7, 2006. 
+T. Fukui and J. Motohisa: "Novel growth issues for quantum nano-structures by MOVPE (plenary)",2006 International Conference on Metalorganic Vapor Phase Epitaxy, Miyazaki, Japan.
+T. Fukui and J. Motohisa: "Quantum dots and nanowires grown by selective area MOVPE (invited)", The 4th NIMS International Conference on Photonic Processes in Semiconductor Nanostructures, Tsukuba, Japan (2006).208
+S. Hara, J. Motohisa, J. Takeda, J. Noborisaka and T. Fukui: "Photoluminescence from Single Hexagonal Nano-Wire with GaInAs/GaAs Double Hetero-Structures Grown by Selective Area MOVPE (Invited)", the 31st International Symposium on Compound Semiconductors (ISCS2004), Seoul, Korea (2004).
+T. Fukui and J. Motohisa: "Growth of compound semiconductor dot-network for single electron transistor (invited)," 12th Int. Conference on Solid Films and Surfaces, Hamamatsu, Japan (2004).
+T. Fukui and J. Motohisa: "GaAs single electron devices and their logic circuits based on selectively formed dot network (invited)," 6th RIES-Hokudai Symposium, Sapporo, Japan (2004).
+T. Fukui and J. Motohisa: "MOVPE growth of GaAs nano-structures and their applications to single electron devices (invited)," Int. Symp. Molecular Nano-Engineering and its Development into Microsystems, Tokyo, Japan (2004).
+T. Fukui and J. Motohisa: "III-V semiconductor nano-structures fabricated by MOVPE growth and their application to nano-devices (invited)," Symposium on Surface Physics 2005, Iwate, Japan (2005).
+T. Fukui, F. Nakajima and J. Motohisa: "GaAs single electron transistors and their integrated logic circuits based on selectively grown quantum nanostructures (invited)", The 8th IUMRS International Conference on Advanced Materials, Yokohama, Japan (2003).
+T. Fukui, F. Nakajima, Y. Miyoshi and J. Motohisa: "GaAs single electron devices and integrated circuits based on selectively grown quantum nanostructures (invited)", International Symposium on Semiconductor Functional Nano Systems, Atsugi, Japan (2003).
+T. Fukui and J. Motohisa: "Surface Analysis of Compound Semiconductor Nano-structures by AFM and STM (invited)", New Trends and Possibilities of Surface Analysis -- Towards the Analysis of Nano-structrured Materials, Tokyo, Japan (2002).

*2001 and before ([[More Publications]]) [#b1e75ada]
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