Some reprints of the papers can be downloaded from HUSCAP (Hokkaido University collection of scholarly and academic papers). For achievements other than publications, see RecentAchievements.

topics

2019

  1. Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, Katsuhiro Tomioka, “Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy” Nanotechnology, Vol. 30, pp. 134002 (2019).
  2. Kohei Chiba, Akinobu Yoshida, Katsuhiro Tomioka, Junichi Motohisa, “Vertical InGaAs? Nanowire Array Photodiodes on Si” ACS Photonics, Vol. 6, pp. 260 – 264 (2019).
  3. Yusuke Minami, Akinobu Yoshida, Junichi Motohisa, Katsuhiro Tomioka, “Growth and characterization of GaAs? nanowires on Ge(111) substrates by selective-area MOVPE” J. Crystal Growth, Vol. 506, pp. 135 – 139 (2019).

2017

  1. K. Chiba, K. Tomioka, A. Yoshida, and J. Motohisa: “Composition controllability of InGaAs? nanowire arrays in selective area growth with controlled pitches on Si platform”, AIP Advances 7, 125304 (2017).
  2. F. Ishizaka, Y. Hiraya, K. Tomioka, J. Motohisa and T, Fukui: “Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array”, Nano Lett. 17 1350-1355 (2017).
  3. A. Yoshida, K. Tomioka, F. Ishizaka, and J. Motohisa: “Growth of InGaAs? nanowires on Ge(111) by selective-area metal-organic vapor phase epitaxy”, J. Cryst. Growth 464, 75-79 (2017).
  4. S. Yanase, H. Sasakura, S. Hara, and J. Motohisa: “Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires”, Jpn. J. Appl. Phys. 56, 04CP04 (2017).
  5. F. Ishizaka, Y. Hiraya, K. Tomioka, J. Motohisa, and T. Fukui: “Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures”, Jpn. J. App. Phys. 56, 010311 (2017).

2016

  1. A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, and J. Motohisa: “Selective-Area Growth of Vertical InGaAs? Nanowires on Ge for Transistor Applications”, ECS Transactions 75(7) 265-270 (2016). (Download from HUSCAP)
  2. Katsuhiro Tomioka, Junichi Motohisa, Takashi Fukui, “(Invited) Recent progress in vertical Si/III-V tunnel FETs: From fundamental to current-boosting technology” ECS Trans., Vol. 75, pp. 127 – 134 (2016).
  3. Katsuhiro Tomioka, Junichi Motohisa, Takashi Fukui, “(Invited) Advances in steep-slope tunnel FETs” Proc. IEEE ESSDERC, pp. 397 – 402 (2016).

2015

  1. Daisuke Uchida, Masayuki Ikebe, Junichi Motohisa, Eiichi Sano: "Low-Power Single-Slope Analog-to-Digital Converter with Intermittently Working Time-to-Digital Converter", Journal of Signal Processing Vol. 19, No. 6, pp. 219-226 (2015).

2014

  1. Zhixin Cui, Rajagembu Perumal, Tomotsugu Ishikura, Keita Konishi, Kanji Yoh and Junichi Motohisa : "Characterizing the electron transport properties of a single 〈110〉 InAs? nanowire", Appl. Phys. Express 7 085001 (2014).
  2. Junichi Motohisa, Yoshinori Kohashi, and Satoshi Maeda: "Far-Field Emission Patterns of Nanowire Light-Emitting Diodes", Nano Lett., 2014, 14 (6), pp. 3653-3660.
  3. Daisuke Uchida, Masayuki Ikebe, Junichi Motohisa, Eiichi Sano and Akira Kondou: "CMOS common-mode rejection filter with floating active transformer operation", Jpn. J. Appl. Phys. 53 04EE20 (2014).
  4. Y Kohashi, S Hara, and J Motohisa: "Composition–dependent growth dynamics of selectively grown InGaAs? nanowires", Mater. Res. Express 1 015036 (2014).

2013

  1. Yuta Kobayashi, Yoshinori Kohashi, Shinjiro Hara, and Junichi Motohisa: "Selective-Area Growth of InAs? Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors", Appl. Phys. Express 6 (2013) 045001.
  2. Yasuaki Masumoto, Ken Goto, Shinichi Tomimoto, Premila Mohan, Junichi Motohisa, Takashi Fukui: "Bimolecular interlayer scattering of electrons in InP/InAs?/InP core–multishell nanowires", Journal of Luminescence Volume 133, January 2013, Pages 135–137
  3. Yoshinori Kohashi, Shinya Sakita, Shinjiroh Hara, and Junichi Motohisa: “Pitch-Independent Realization of 30-nm-Diameter InGaAs? Nanowire Arrays by Two-Step Growth Method in Selective-Area Metal-Organic Vapor Phase Epitaxy”, Appl. Phys. Express, Vol. 6, No. 2, 025502 (3 pages) (2013).

2012

  1. Junichi Motohisa and Kenji Hiruma: "Light Absorption in Semiconductor Nanowire Arrays with Multijunction Cell Structures", Jpn. J. Appl. Phys. 51 (2012) 11PE07 (7 pages).
  2. H. Sasakura, C. Hermannsta ̈dter, S. N. Dorenbos, N. Akopian, M. P. van Kouwen, J. Motohisa, Y. Kobayashi, H. Kumano, K. Kondo, K. Tomioka, T. Fukui, I. Suemune, and V. Zwiller: "Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy", Phys. Rev. B 85, 075324 (2012).
  3. Hyo Jin Kim, Junichi Mothohisa, and Takashi Fukui: “ Energy state of InGaAs? quantum dots on SiO2-patterned vicinal substrate, ” Nanoscale Research Letters, Vol.7, pp. 104-1-5 (2012).
  4. Satoshi Maeda, Katsuhiro Tomioka, Shinjiroh Hara, and Junichi Motohisa: "Fabrication and Characterization of InP Nanowire Light-Emitting Diodes", Jpn. J. Appl. Phys. vol. 51, No. 2, 02BN03 (2012).
  5. K. Hiruma, K. Tomioka, P. Mohan, L. Yang, J. Noborisaka, B. Hua, A. Hayashida, S. Fujisawa, S. Hara, J. Motohisa, and T. Fukui: Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy (Review Article), Journal of Nanotechnology, Volume 2012 (2012).
  6. Yoshinori Kohashi, Takuya Sato, Keitaro Ikejiri, Katsuhiro Tomioka, Shinjiroh Hara, and Junichi Motohisa: "Influence of growth temperature on growth of InGaAs? nanowires in selective-area metal-organic vapor-phase epitaxy", J. Cryst. Growth 338, pp.47–51(2012) .

2011

  1. Katsuhiro Tomioka, Keitaro Ikejiri, Tomotaka Tanaka, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, and Takashi Fukui: "Selective-area growth of III-V nanowires and their applications (review)", J. Mater. Res. Vol. 26, No. 17 September 14, 2011, 2127 (2011).
  2. Keitaro Ikejiri, Yusuke Kitauchi, Katsuhiro Tomioka, Junichi Motohisa, and Takashi Fukui, "Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires", Nano Lett.,11 (10), pp 4314-4318 (2011) (see, also, corrections : http://pubs.acs.org/doi/abs/10.1021/nl2042886 )
  3. Junichi Motohisa, Katsuhiro Tomioka, Bin Hua, Kumar S. K. Varadwaj, Shinjiroh Hara, Kenji Hiruma and Takashi Fukui: “III-V Semiconductor Nanowire Light Emitting Diodes and Lasers,” in Advances in III-V Semiconductor Nanowires and Nanodevices, edited by J. Li, D. Wang, and R. R. LaPierre? (Bentham Science Publisher, 2011)
  4. Yasuaki Masumoto, Yuuki Hirata, Premila Mohan, Junichi Motohisa, and Takashi Fukui: "Polarized photoluminescence from single wurtzite InP/InAs?/InP core-multishell nanowires", Appl. Phys. Lett. 98, 211902 (2011).
  5. Shota Fujisawa, Takuya Sato, Shinjiro Hara, Junichi Motohisa, Kenji Hiruma, and Takashi Fukui: "Growth and Characterization of a GaAs? Quantum Well buried in GaAsP/GaAs? Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy", Jpn. J. Appl. Phys. 50 04DH03 (2011).
  6. Masatoshi Yoshimura, Katsuhiro Tomioka, Kenji Hiruma, Shinjiro Hara, Junichi Motohisa and Takashi Fukui: "Lattice-mismatched InGaAs? nanowires formed on GaAs? (111)B by selective-area MOVPE", Journal of Crystal Growth, Volume 315, Issue 1, Pages 148-151 (2011).
  7. Yudai Takayama, Katuhiro Tomioka, Shinjiro Hara, Takashi Fukui, and Junichi Motohisa: "Selective-Area MOVPE growth of GaSb? on GaAs? (111)B", phisica status solidi (c) Volume 8, Issue 2, pages 272-274, February 2011.

2010

  1. S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune: : "Position controlled nanowires for infrared single photon emission", Appl. Phys. Lett.97 171106 (2010)
  2. Atsushi Hayashida, Takuya Sato, Shinjiro Hara, Junichi Motohisa,Kenji Hiruma, Takashi Fukui: "Fabrication and characterization of GaAs? quantum well buried in AlGaAs?/GaAs? heterostructure nanowires", Journal of Crystal Growth Volume 312, Issue 24, 1 December 2010, Pages 3592-3598.
  3. Yasuaki Masumoto, Ken Goto, Bipul Pal, Premila Mohan, Junichi Motohisa and Takashi Fukui: "Spectral diffusion of type-II excitons in InP/InAs?/InP core-multishell nanowires", Physica E:Volume 42, Issue 10, September 2010, Pages 2579-2582.
  4. Yasuaki Masumoto, Ken Goto, Seitaro Yoshida, Yoshiki Sakuma, Premila Mohan, Junichi Motohisa, and Takashi Fukui: "One- and two-dimensional spectral diffusion of type-II excitons in InP/InAs?/InP core-multishell nanowires", PHYSICAL REVIEW B 82, 075313, (2010).
  5. Y. Kobayashi, J. Motohisa, K. Tomioka, S. Hara, K. Hiruma, and T. Fukui: Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs, Proceedings of 2010 Internatinal Conference on Indium Phosphide & Related Materials (IPRM) (2010).
  6. Masatoshi Yoshimura, Katsuhiro Tomioka, Kenji Hiruma, Shinjiro Hara, Junichi Motohisa, and Takashi Fukui: "Growth and Characterization of InGaAs? Nanowires Formed on GaAs?(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy", Jpn. J. Appl. Phys. 49 (2010) 04DH08.
  7. Yusuke Kitauchi, Yasunori Kobayashi, Katsuhiro Tomioka, Shinjiro Hara, Kenji Hiruma, Takashi Fukui and Junichi Motohis, "Structural Transition in Indium Phosphide Nanowires", Nano Lett., 2010, 10 (5), pp 1699-1703 (2010).
  8. Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma and Takashi Fukui, " GaAs?/AlGaAs? Core Multishell Nanowire-Based Light-Emitting Diodes on Si", Nano Lett., 2010, 10 (5), pp 1639-1644.
  9. Tomotaka Tanaka, Katsuhiro Tomioka, Shinjiroh Hara, Junichi Motohisa, Eiichi Sano, and Takashi Fukui: "Vertical Surrounding Gate Transistors Using Single InAs? Nanowires Grown on Si Substrates ", Appl. Phys. Express 3 (2010) 025003.

2009

  1. H. Sasakura, H. Kumano, I. Suemune ,J. Motohisa ,Y. Kobayashi, M. van Kouwen, K. Tomioka, T. Fukui, N. Akopian, and V. Zwiller, "Exciton coherence in clean single InP/InAsP/InP nanowire quantum dots emitting in infra-red measured by Fourier spectroscopy", Journal of Physics: Conference Series 193, 012132 (2009).
  2. Ken Goto, Michio Ikezawa, Shinichi Tomimoto, Bipul Pal, Yasuaki Masumoto, Premila Mohan, Junichi Motohisa, and Takashi Fukui: "One- and Two-Dimensional Spectral Diffusions in InP/InAs?/InP Core-Multishell Nanowires", Japanese Journal of Applied Physics 48 (2009) 04C203.
  3. Hiroatsu Yoshida, Keitaro Ikejiri, Takuya Sato, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa and Takashi Fukui: “Analysis of Twin Defects in GaAs? Nanowires and Tetrahedra and Their Correlation to GaAs? (111)B Surface Reconstructions in Selective-Area Metal-Organic Vapor Phase Epitaxy”, J. Cryst. Growth 315, pp.52-57, (2009).
  4. L. Yang, J. Motohisa, T. Fukui, L. x. Jia, L. Zhang, M. M. Geng, P. Chen, Y. L. Liu: "Fabry-Perot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs?/GaAs? heterostructure", Optics Express, Vol. 17 Issue 11, pp.9337-9346 (2009).
  5. Katsuhiro Tomioka, Yasunori Kobayashi, Junichi Motohisa, Shinjiroh Hara and Takashi Fukui: Selective-area growth of vertically alignedGaAs? and GaAs?/AlGaAs? core-shell nanowires on Si(111) substrate, Nanotechnology 20, 145302 (2009).
  6. Hajime Goto, Katsutoshi Nosaki, Katsuhiro Tomioka, Shinjiro Hara,Kenji Hiruma, Junichi Motohisa, and Takashi Fukui: "Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy", Applied Physics Express 2, 035004 (2009).
  7. Ken Goto, Shinichi Tomimoto, Bipul Pal, Yasuaki Masumoto, Premila Mohan, Junichi Motohisa, and Takashi Fukui: "Transient band-bending in InP/InAs?/InP core-multishell nanowires", phys. stat. sol. (c) 6, No. 1, 205-208 (2009).
  8. Bin Hua, Junichi Motohisa, Yasunori Kobayashi, Shinjiroh Hara and Takashi Fukui: " Single GaAs?/GaAsP Coaxial Core−Shell Nanowire Lasers", Nano Lett., 2009, 9 (1), pp 112-116.

2008

  1. V. Zwiller, N. Akopian, M. van Weert, M. van Kouwen, U. Perinetti, L. Kouwenhoven, R. Algra, J. Gómez Rivase, E. Bakkers, G. Patriarche, L. Liu, J.-C. Harmand, Y. Kobayashi and J. Motohisa: "Optics with single nanowires", C.R. Physique 9, pp.804-815 (2008).
  2. Takuya Sato, Yasunori Kobayashi, Junichi Motohisa, Shinjiro Hara, Takashi Fukui : "SA-MOVPE of InGaAs? nanowires and their compositions studied by micro-PL measurement", Journal of Crystal Growth 310, pp.5111-5113 (2008).
  3. B. Pal, K. Goto, M. Ikezawa, Y. Masumoto, P. Mohan, J. Motohisa, and T. Fukui: "Type-II behavior in wurtzite InP/InAs?/InP core-multishell nanowires", Appl. Phys. Lett. 93, 073105 (2008).
  4. K. Tomioka, J. Motohisa, S. Hara, and T. Fukui: "Control of InAs? Nanowire Growth Directions on Si", Nano Lett.; 2008; 8(10); 3475-3480.
  5. L Yang, J Motohisa, K Tomioka, J Takeda, T Fukui, M M Geng, L X Jia, L Zhang and Y L Liu: "Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs?/GaAs? quantum well", Nanotechnology, 19 No 27, 275304 (2008).
  6. B. Hua, J. Motohisa, S. Hara, T. Fukui: "Microcavity structures in single GaAs? nanowires", physica status solidi (c) Vol. 5, Issue 9, pp.2722-2725 (2008).
  7. M. Fukui, Y. Kobayashi, J. Motohisa and T. Fukui: "Spectroscopy and Imaging of GaAs?-InGaAs?-GaAs? Heterostructured Nanowires Grown by Selective-Area Metalorganic Vapor Phase Epitaxy", physica status solidi (c) Vol. 5, Issue 9, pp.2743-2745 (2008).
  8. Keitaro Ikejiri, Takuya Sato, Hiroatsu Yoshida, Kenji Hiruma1, Junichi Motohisa, Shinjiroh Hara and Takashi Fukui:"Growth characteristics of GaAs? nanowires obtained by selective area metal-organic vapour-phase epitaxy", Nanotechnology 19, 265604 (2008).
  9. Shinji HASHIMOTO, Junichiro TAKEDA, Akihiro TARUMI, Shinjiro HARA, Junichi MOTOHISA, and Takashi FUKUI: "Formation of InP and InGaAs? Air-Hole Arrays on InP(111) Substrates by Selective-Area Metal-Organic Vapor Phase Epitaxy", Jpn. J. Appl. Phys. 47, pp. 3354 -3358 (2008).
  10. Hiroko IGUCHI, Shinjiroh HARA , Junichi MOTOHISA, and Takashi FUKUI: "Metal-Organic Vapor Phase Epitaxial Growth Condition Dependences of MnAs? Nanocluster Formation on GaInAs? (111)A Surfaces", Jpn. J. Appl. Phys. vol. 47, No. 4 pp.3253-3256 (2008).
  11. Y. Kobayashi, M. Fukui, J. Motohisa, and T.Fukui:"Micro-photoluminescence spectroscopy study of high quality InP nanowires grown by selective-area metalorganic vapor phase epitaxy", Physica E. Vol. 40, No 6, pp.2204-2206 (2008).
  12. S. Nomura, K. Tsumura, P. Mohan, J. Motohisa and T. Fukui: "Optical evidence for Aharonov-Bohm effect in quantum tubes", Physica E, vol. 40, no. 5, pp.1081-1082.
  13. Shinjiroh Hara, Daichi Kawamura, Hiroko Iguchi, Junichi Motohisa and Takashi Fukui:"Self-assembly and selective-area formation of ferromagnetic MnAs? nanoclusters on lattice-mismatched semiconductor surfaces by MOVPE", J. Cryst.Growth Vol. 310, No. 7-9, pp.2390-2394 (2008).
  14. Takuya Sato, Junichi Motohisa, Jinichiro Noborisaka, Shinjiro Hara and Takashi Fukui: "Growth of InGaAs? nanowires by selective-area metalorganic vapor phase epitaxy", J. Cryst. Growth Vol. 310, No. 7-9 pp. 2359--2364 (2008).

2007

  1. K. Hiruma, K. Ikejiri, H. Yoshida, K. Tomioka, J. Motohisa, S. Hara, and T. Fukui: "Foramtion of III-V Compound Semiconductor Nanowire and a Crystal Structure Change between Zincblende and Wurzite (review)", Japanese Journal of Crystal Growth 34, No.4 pp.224-232 (2007). (in Japanese)
  2. Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, and Takashi Fukui:"Crystallographic Structure of InAs? Nanowires Studied by Transmission Electron Microscopy", Jpn. J. Appl. Phys. 46, L1102 (2007) .
  3. Ying Ding, Junichi Motohisa, Bin Hua, Shinjiroh Hara, and Takashi Fukui: "Observation of Microcavity Modes and Waveguides in InP Nanowires Fabricated by Selective-Area Metalorganic Vapor-Phase Epitaxy", Nano Lett. 7 (12), 3598-3602 (2007).
  4. J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka and T. Fukui:"Electrical Characterizations of InGaAs? Nanowire-top-gate Field-effect-Transistors by using Selective-area MOVPE", Jpn. J. Appl. Phys. 46, 7562 (2007).
  5. Bin Hua, Junichi Motohisa, Ying Ding, Shinjiroh Hara, and Takashi Fukui: "Characterization of Fabry-P?rot microcavity modes in GaAs? nanowires fabricated by selective-area metal organic vapor phase epitaxy", Appl. Phys. Lett. 91, 131112 (2007)
  6. Noboru Ooike,Junichi Motohisa,Takashi Fukui: "Drain-Current Deep Level Transient Spectroscopy Study of Carrier Emission Process from InAs? Quantum Dots in GaAs? Narrow-Wire Field Effect Transistors", Jpn. J. Appl. Phys. Vol.46 (2007) No.7A, p4344-4350.
  7. K. Tsumura, S. Nomura, J. Motohisa, P. Mohan, and T. Fukui: "Aharonov-Bohm oscillations in photoluminescence from charged exciton in quantum tubes", Jpn. J. Appl. Phys. Vol.46 (2007) No.18 pp.L440 - L443.
  8. B. Pal, K. Goto, M. Ikezawa, Y. Masumoto, P. Mohan, J. Motohisa, T. Fukui: "Time- and Spectrally-Resolved PL Study of a Regular Array of InP/InAs?/InP Core-multishell Nanowires", arXiv:cond-matt/0702127 (2007).
  9. L. Yang, J. Motohisa, J. Takeda, K. Tomiyoka and T. Fukui: "Selective-area growth of hexagonal nanopillars with single InGaAs?/GaAs? quantum wells on GaAs?(111)B substrate and their temperature-dependent photoluminescence", Nanotechnology 13 (2007) 105302.
  10. L. Yang, J. Motohisa, J. Takeda and T. Fukui: "Photonic crystal slabs with hexagonal air holes fabricated by selective area metal organic vapor phase epitaxy", Sensors and Actuators A: Physical 133 (2007) 288-293.
  11. Keitaro Ikejiri, Jinichiro Noborisaka, Shinjiroh Hara, Junichi Motohisa and Takashi Fukui: "Mechanism of catalyst-free growth of GaAs? nanowires by selective area MOVPE", J. Crsyt. Growth Volume 298, pp.616-619 (2007).
  12. K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa and T. Fukui: "Growth of highly uniform InAs? nanowire arrays by selective-area MOVPE", J. Cryst. Growth 298, pp.644-647 (2007).
  13. Shinjiroh Hara, Junichi Motohisa and Takashi Fukui: "Self-assembled formation of ferromagnetic MnAs? nanoclusters on GaInAs?/InP (111) B layers by metal-organic vapor phase epitaxy", J. Cryst. Growth 298, pp.612-615 (2007).

2006

  1. J. Motohisa and T. Fukui: "Catalyst-free selective area MOVPE of semiconductor nanowires", Proceedings of SPIE 6370, 63700B (2006).
  2. L. Yang, J. Motohisa, J. Takeda, K. Tomioka, and T. Fukui: "Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs?/GaAs? quantum wells fabricated by selective-area metal organic vapor phase epitaxy", Appl. Phys. Lett. 89, 203110 (2006).
  3. Tamura, H., Nomura, S.; Yamaguchi, M.; Akazaki, T.; Takayanagi, H.; Mohan, P.; Motohisa, J.; Fukui, T. :"Magneto-optics of GaAs? quantum wire lattices grown by selective-area MOVPE", Journal of Physics: Conference Series, v 38, n 1, 2006, p 130-3
  4. Premila Mohan, Junichi Motohisa and Takashi Fukui:" Fabrication of InP/InAs?/InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy", Appl. Phys. Lett. 88, 133105 (2006). (download from HUSCAP) (also at Virtual Journal of Nanoscience and Technology, Volume 13, Issue 14)
  5. Junichi Motohisa and Takashi Fukui: "Semiconductor Nanowires and Their Application to Nanodevices (in Japanese)", Oyo Buturi 75, 296-302 (2006).
  6. Premila Mohan, Junichi Motohisa, and Takashi Fukui: "Realization of conductive InAs? nanotubes based on lattice-mismatched InP/InAs? core-shell nanowires", Appl. Phys. Lett. 88, 013110 (2006). (download from HUSCAP) (also at Virtual Journal of Nanoscience and Technology, Volume 13, Issue 2)

2005

  1. Lin Yang, Junichi Motohisa, Junichiro Takeda, and Takashi Fukui: "Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes: selective area metal organic vapor phase epitaxy", Optics Express Vol. 13, No. 26, pp.10823-10832
  2. D. Nataraj, N. Ooike, J. Motohisa, and T. Fukui:"Fabrication of one-dimensional GaAs? channel-coupled InAs? quantum dot memory device by selective-area metal-organic vapor phase epitaxy", Appl. Phys. Lett. 87, 193103 (2005). (download from HUSCAP) (also at Virtual Journal of Nanoscience and Technology, Volume 12, Issue 20)
  3. Junichiro Takeda, Masashi Akabori, Junichi Motohisa, Richard N?tzel and Takashi Fukui:"Selective-area MOVPE fabrication of GaAs? hexagonal air-hole arrays on GaAs?(111)B substrates using flow-rate modulation mode", Nanotechnology 16, pp.2954-2957 (2005)
  4. Premila Mohan, Junichi Motohisa and Takashi Fukui: "Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays", Nanotechnology 16, pp. 2903-2907 (2005).
  5. J. Noborisaka, J. Motohisa, S. Hara, and T. Fukui: "Fabrication and characterization of freestanding GaAs?/AlGaAs? core-shell nanowires and AlGaAs? nanotubes by using selective-area metalorganic vapor phase epitaxy", Appl. Phys. Lett. 87, 093109 (2005). (download from HUSCAP) (see cover of APL at http://apl.aip.org/apl/covers/87_9.jsp ) (also at Virtual Journal of Nanoscience and Technology, Volume 12, Issue 10)
  6. Y. Miyoshi, F. Nakajima, J. Motohisa, and T. Fukui:"A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy", Appl. Phys. Lett. 87, vol. 3, 033501 (2005). (download from HUSCAP) (see cover of APL at http://apl.aip.org/apl/covers/87_3.jsp ) (also at Virtual Journal of Nanoscience and Technology, Volume 12, Issue 4)
  7. Jinichiro Noborisaka, Junichi Motohisa, and Takashi Fukui: "Catalyst-free growth of GaAs? nanowires by selective-area metalorganic vapor-phase epitaxy", Appl. Phys. Lett. 86, 213102 (2005). (download from HUSCAP) (also at Virtual Journal of Nanoscience and Technology, Volume 11, Issue 21)
  8. Lin Yang, Junichi Motohisa, and Takashi Fukui: "Suggested procedure for the use of the effective-index method for high-index-contrast photonic crystal slabs", Opt. Eng. 44, 078002 (2005).
  9. L. Yang, J. Motohisa, and T. Fukui:"Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides," Jpn. J. Appl. Phys. Vol. 44, No. 4B, 2005, pp. 2531-2536 (2005).
  10. S. Hara, J. Motohisa, J. Noborisaka, J. Takeda, and T. Fukui: "Photoluminescnce from single hexagonal nano-wire grown by selective area MOVPE," Inst. Phys. Conf. Ser. No 184, pp.393-398 (2005).

2004

  1. L. Besombes, J. J. Baumberg, and J. Motohisa: "Polarization-dependent Ultrafast Rabi Oscillations in Single InGaAs? Quantum Dots," Semiconductor Science and Technology, 19 (4), S148-S151 (2004).
  2. Junichiro Takeda, Masaru Inari, Junichi Motohisa and Takashi Fukui: "Fabrication and characterization of GaAs? two-dimensional air-hole arrays on GaAs? (111)A substrates using selective-area MOVPE," Journal of Crystal Growth, Volume 272, 1-4, pp. 570-575 (2004).
  3. N, Ooike, J. Motohisa, and T. Fukui: "MOVPE selectively grown GaAs? nano-wires with self-aligned W side gate," Journal of Crystal Growth, v 272, n 1-4, p 175-179 (2004).
  4. J. Motohisa J. Noborisaka, J. Takeda, M. Inari, and T. Fukui: "Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates," Journal of Crystal Growth, v 272, n 1-4, p 180-185 (2004). (download from HUSCAP)
  5. N. Ooike, J. Motohisa, and T. Fukui "Fabrication of GaAs? nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE," Thin Solid Films, v 464-465, p 220-224 (2004).
  6. J. Motohisa, J. Takeda, M. Inari, J. Noborisaka, and T. Fukui "Growth of GaAs?/AlGaAs? hexagonal pillars on GaAs? (111)B surfaces by selective-area MOVPE," Physica E, v 23, n 3-4, p 298-304 (2004). (download from HUSCAP)
  7. Premila Mohan ,Junichi Motohisa , and Takashi Fukui "Realization of InAs?-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy," Applied Physics Letters Volume 84, Issue 14, pp. 2664-2666 (2004). (download from HUSCAP)
  8. M. Inari, J. Takeda, J. Motohisa, and T.Fukui: "Selective area MOVPE growth of InP and InGaAs? pillar structures for InP-based two-dimensional photonic crystals," Physica E Vol.21, No.2--4, pp.620--624 (2004).
  9. J. J. Motohisa Takeda, M. Inari, and T. Fukui: "Growth and optical properties of 2D photonic crystals based on hexiagonal GaAs?/AlGaAs? pillar arrays by selective-area metalorganic vapor phase epitaxy," Mat. Res. Soc. Proc. Vol. 797, W.6.6.1-W.6.6.6 (2004).
  10. H. J. Kim, J. Motohisa and T. Fukui: "Formation of GaAs? wire structures and position controlled In$_{0.8}$Ga$_{0.2}$As quantum dots on SiO$_{2}$-patterned vicinal (001) GaAs? substrate," Nanotechnology Vol.15, pp.292-296 (2004).

2003

  1. F. Nakajima,Y. Miyoshi, J. Motohisa and T. Fukui: "Single-electron AND/NAND logic circuits based on a self-organized dot network," Appl. Phys. Lett. Vol. 83, No.13, pp.2680-2682 (2003). (download from HUSCAP) (see cover of APL at http://apl.aip.org/apl/covers/83_13.jsp )
  2. M. Akabori, J. Takeda, J. Motohisa and T. Fukui: "InGaAs? nano-pillar array formation on partially masked InP (111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application," Nanotechnology Vol.14, No.10, pp.1071-1074 (2003).
  3. L. Besombes, J. J. Baumerg and J. Motohisa: "Excited States in Optically Gated Charged Single InAs? Quantum Dots," physica status solidi (c) Vol.0, No.5, pp.1501-1505 (2003).
  4. P. Mohan, F. Nakajima, M. Akabori, J. Motohisa and T. Fukui: "Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy," Appl. Phys. Lett. Vol. 83, No. 4, pp. 689-691, (2003). (download from HUSCAP)
  5. L. Besombes, J. J. Baumberg and J. Motohisa:"Coherent Spectroscopy of Optically Gated Charged Single InGaAs? Quantum Dots," Phys. Rev. Lett. Vol.90, No.25, pp. 257402-1-257402-4 (2003). (download from HUSCAP)
  6. H. Takahashi, Y. Miyoshi, F. Nakajima, J. Motohisa and T. Fukui: "Formation and characteristics of 100-nm scale GaAs? quantum wires by selective area MOVPE," Appl. Surf. Sci. Vol. 216, No.1-4, pp. 402-406 (2003).

2002

  1. M. Akabori, J. Takeda, J. Motohisa and T. Fukui:"Selective Area MOVPE Growth of Two-dimensional Photonic Crystals Hving an Air-hole Array and its Application to Air-bridge-type Structures," Physica E vol.13, No. 2-4, pp.446-450 (2002).
  2. W.G. van der Wiel, S. De Franceschi, J.M. Elzerman, S. Tarucha, L.P. Kouwenhoven, J. Motohisa, F. Nakajima and T. Fukui:"Two-stage Kondo effect in a quantum dot at high magnetic field," Physical Review Letters vol.88, No. 12, 126803 (2002). (download from HUSCAP)
  3. F. Nakajima, Y. Ogasawara, J. Motohisa and T. Fukui: " Two-way current switch using Coulomb blockade in GaAs? quantum dots by selective area metalorganic vapor phase epitaxy," Physica E vol.13, No. 2-4, pp.703-707 (2002).
  4. J. Motohisa, W.G. van der Wiel, J.M. Elzerman, S. De Franceschi, F. Nakajima, Y. Ogasawara, T. Fukui, and L. P. Kouwenhoven: " Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy," Physica E vol.13, No. 2-4, pp.687-690 (2002). (download from HUSCAP)
  5. Toyonori. Kusuhara, Fumito Nakajima, Junichi Motohisa and Takashi Fukui: " Formation of InAs? Dots on AlGaAs? Ridge Wire Structures by Selective Area MOVPE Growth," Japanese Journal of Applied Physics Part 1 vol.41, No. 4B, pp.2508-2512 (2002).
  6. J. Motohisa, F. Nakajima, T. Fukui, W.G. van der Wiel, J.M. Elzerman, and S. De Franceschi, and L. P. Kouwenhoven: " Fabrication and Low-Temperature Transport Properties of Selectively Grown Dual-Gated Single-Electron Transistors," Applied Physics Letters vol.80, No. 15, pp.2797-2799 (2002). (download from HUSCAP)
  7. T. Ishihara, S. Lee, M. Akabori, J. Motohisa and T. Fukui: " Dependence on In content of In$_x$Ga$_{1-x}$As quantum dots grown along GaAs? multiatomic steps by MOVPE," Journal of Crystal Growth vol.237-239, No. Part 2, pp.1476-1480 (2002).
  8. Junichiro Takeda, Masashi Akabori, Junichi Motohisa and Takashi Fukui: " "Formation of Al$_x$Ga$_{1-x}$As periodic array of micro-hexagonal pillars and air holes by selective area MOVPE," Applied Surface Science vol.190, No. 1-4, pp.236-241 (2002).
  9. J. Motohisa, F. Nakajima, and T. Fukui: "Formation of Nano-Scale Heterointerfaces by Selective Area Metalorganic Vapor Phase Epitaxy and Their Applications," Applied Surface Science vol.190, No. 1-4, pp.184-190 (2002).
  10. H. J. Kim, J. Motohisa and T. Fukui: "Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001)GaAs? substrates," Applied Physics Letters vol.81, No. 27, pp.5147-5149 (2002). (download from HUSCAP)

Invited Talks

  1. Junichi Motohisa, "Photonic Applications of Nanowires (tentative) (invited)", Nanowires 2012 (NW2012), September 19 - 21, 2012, Berlin, Germany
  2. Junichi Motohisa, "Selective area growth of InP Nanowires (tentative) (invited)'', 24th International Conference on Indium Phosphide and Related Materials, August 27-30, 2012, Santa Barbara, California, USA.
  3. J. Motohisa, "MOVPE-Grown III-V Semiconductor Nanowires for Nanodevice Application", International Workshop on Quantum Nanostructures and Nanoelectronics (QNN2011), Komaba, Tokyo, October 3-4, 2011
  4. Juinichi Motohisa, Katsuhiro Tomioka, Shinjiro Hara, K. Hiruma, and T. Fukui,"III-V Semiconductor Nanowire Transistors and Light Emitting Devices", 2011 Asia_Pacific Workshop on Fundametals and Applications of advanced semiconductor devices (AWAD), Daejeon, Korea, June 29- July 1 , 2011.
  5. J. Motohisa, K. Tomoka, S. Hara, K. Hiruma, and T. Fukui, "Semiconductor nanowires: growth, physics, and device applications", The 11th Asia Pacific Physics Conference (APPC11), Shanghai, November 14-18, 2010.
  6. J. Motohisa, K. Tomoka, S. Hara, K. Hiruma, and T. Fukui, "Growth Mechanism of III-V Semiconductor Nanowires in Selective-Area Metalorganic Vapor Phase Epitaxy", The 16th International Conference on Crystal Growth (ICCG-16), Beijing, August 8-13, 2010
  7. J. Motohisa, "Optical properities and application of MOVPE-grown III-V nanowires", the 15th OptoElectronics and Communications Conference, Sapporo, July 5-9, 2010.
  8. J. Motohisa, B. Hua, K. S. K. Varadwaj, S. Hara, K. Hiruma, and T. Fukui: "Lasing in GaAs?-based Nanowires Grown by Selective-Area MOVPE", Winter Topicals 2010, Majorca, Spain, January 11-13, 2010.
  9. Junichi Motohisa, Shinjiro Hara, Kenji Hiruma, and Takashi Fukui: "Growth of nanowires by selective-area metalorganic vapor phase epitaxy and their applications", The XV International Workshop on the Physics of Semiconductor Devices, New Delhi, India, December 15-19, 2009.
  10. J. Motohisa, "Growth and Application of Semiconductor Nanowires", International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), Beijing, China, September 1-3, 2009.
  11. J. Motohisa, "Growth of III-V nanowires by selective-area MOVPE and their applications", 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009), Anan, Tokushima, Japan, August 10-14, 2009.
  12. J. Motohisa, B. Hua, and Y. Kobayashi:"Near-infrared lasing in GaAs?/GaAsP coaxial core-shell nanowires", International Workshop on Photons and Spins in Nanostructures (IWPSN), Sapporo, Japan, July 27-28, 2009.
  13. J. Motohisa, K. Tomioka, S. Hara, K. Hiruma and T. Fukui: “Position Controlled Growth and Optical Properties of III-V Semiconductor Core-Shell Nanowires Grown by Selective-Area MOVPE and Their Device Applications”, the SPIE Photonics West Conferences 2009, San Jose, California, USA, January 24-29, 2009, 7224-17.
  14. J. Motohisa, S. Hara, and T. Fukui: ``InP/InAs? core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy'', 2007 Virtual Conference on Nanoscale Science and Technology, Fayetteville, Arkansas, USA, October 21--25, 2007.
  15. J. Motohisa, T. Fukui, and S. Hara: ``III-V semiconductor nanowires and nanotubes grown by selective area metalorganic vapor phase epitaxy'', Internationl Conference on Nano Science and Technology (ICN+T 2007), Stockholm, Sweden, July 2--6 (2007).
  16. J. Motohisa and T. Fukui: "Growth and properties of semiconductor nanowires by selective-area metalorganic vapor phase epitaxy", 2006 International Conference on Nano Science adn Nano Technology, Gwangju, Korea (2006).
  17. J. Motohisa and T. Fukui: "Catalyst-free selective-area MOVPE of semiconductor nanowires", Optics East 2006, Boston, Massachusetts USA (2006)
  18. J. Motohisa and T. Fukui: "Growth and properties of semiconductor nanowires by Selective-Area Metalorganic Vapor Phase Epitay", 2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Tohoku University, Sendai, Japan (2006)
  19. J. Motohisa and T. Fukui: "Formation of Nanostructures by Selective-Area MOVPE and Their Applications", 2005 Internaional Microprocess and Nanotechnolgy Conference, Tokyo, Japan (2005).
  20. J. Motohisa and T. Fukui: "Growth of Nanostructures by Selective Area MOVPE and Their Applications", International Conference on Quantum Transport in Synthetic Metals & Quantum Functional Semiconductores, 2004, Phoneix Park, Korea (2004).
  21. J. Motohisa, F. Nakajima and T. Fukui; "GaAs? quantum dots fabricated by selective area epitaxy: from growth, physics to device application", 2nd International Conference on Semiconductor Quantum Dots, Tokyo, Japan (2002).
  22. J. Motohisa, "Formation of Quantum Dots and Its Application to Single Electron Devices by Selective Area MOVPE Growth", First International Workshop on Quantum Nonplanar Nanostructures and Nanoelectronics '01, Tsukuba, Japan (2001).
  23. Junichi Motohisa, Fumito Nakajima and Takashi Fukui: "Formation of nano-scale heterointerfaces by selective area metalorganic vapor phase epitaxy and its applications", 8th International Conference on the Formation of Semiconductor Interfaces, Sapporo, Japan (2001).
  24. J. Motohisa and T. Fukui: "Formation and Characterization of Semiconductor Nanostructures", International Workshop on Physics and Applications of Semiconductor Quantum Structures (1998 ASIAN SCIENCE SEMINAR), Cheju Island, Korea (1998).
  25. J. Motohisa, S. Hara, M. Akabori, T. Irisawa and T. Fukui: "Application of Self-Organized Multiatomic Steps on Vicinal GaAs? Surfaces for Quantum Structures and Devices", Japan-China Workshop on Thin Films 1997, Tokyo, Japan (1997).

Inivted as one of the co-authors (2002-)

  1. Shinjiro Hara, Junichi Motohisa, Katsuhiro Tomioka, Kenji Hiruma and Takashi Fukui: Catalyst-Free and Position-Controlled Formation of III-V Semiconductor Nanowires for Optical Device Applications
  2. T. Fukui, K. Tomioka, S. Hara, K. Hiruma and J. Motohisa: “III-V Semiconductor Nanowires Grown and Their Device Applications”, (Invited Paper) the 13th European Workshop on Metal-Organic Vapour Phase Epitaxy (EWMOVPE-XIII), Ulm, Germany, June 7-10, 2009, pp. 3-7.
  3. Takashi Fukui, Katsuhiro Tomioka, Shinjiro Hara, Kenji Hiruma and Junichi Motohisa: "Position Controlled Growth of III-V Semiconductor Core-shell Nanowires Grown by Selective Area MOVPE and Their Device Applications", the 2009 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, April 13-17, 2009.
  4. T. Fukui, S. Hara and J. Motohisa: “Growth of III-V Semiconductor Nanowires”, (Invited Paper) the 29th International Conference on the Physics of Semiconductors (ICPS 2008), Rio de Janeiro, Brazil, July 27-August 1, 2008.
  5. T. Fukui, S. Hara, K. Hiruma and J. Motohisa: “III-V Semiconductor Epitaxial Nanowires and Their Applications”, (Invited Paper) the 16th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2008), Sapporo, Japan, July 9-11, 2008.
  6. T. Fukui, S. Hara and J. Motohisa: “Epitaxial III-V Semiconductors: Nanowires and Nanotubes”, (Invited Paper) the 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, Japan, May 21-24, 2008.
  7. T. Fukui, S. Hara and J. Motohisa: “Growth and Optical Properties of InP/InAs? Multi-Core Shell Nanowires Grown by Selective-Area MOVPE”, the 2008 Material Research Society (MRS) Spring Meeting, San Francisco, California, USA, March 24-28, 2008.
  8. S. Hara, J. Motohisa and T. Fukui: “III-V Semiconductor Nanowires and Their Device Applications”, presented at the 2007 International Symposium on Advanced Silicon-Based Nano-Devices (ISASN 2007), Tokyo, Japan, November 9, 2007, pp. 154-173.
  9. T. Fukui, S. Hara, and J. Motohisa:"InP/InAs? core-shell nanowires grown by selective area MOVPE",7th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires: Physics, Materials and Devices, October 14-17, 2007, Bad Honnef, German.
  10. K. Hiruma, S. Hara, J. Motohisa, and Takasi Fukui: ``Growth Characteristics of III-V Semiconductor Nanowires'', The Second International Conference on One-dimensional Nanomaterials (ICON 2007), Malmo, Sweden, September 26--29, 2007
  11. T. Fukui, S. Hara and J. Motohisa: ``III-V semiconductor hetero-structure nanowires by selective area MOVPE'', 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba, Japan, September 18--21, (2007).
  12. T. Fukui, Premila Mohan and J. Motohisa: ``InP and InP/InAs? multi-core shell nanowires grown by selective area MOVPE'', International Conference on Modulated Semiconductor Structures, Genova, Italy, July 16--20,2007
  13. T. Fukui, S. Hara and J. Motohisa: `` III-V compound semiconductor nanowires grown by selective area MOVPE'', 2nd International Lund Workshop on Nanowire Growth Mechanisms, Lund, Sweden, June (2007).
  14. T. Fukui P. Mohan and J. Motohisa, InP/InAs? core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy 19th International Conference on Indium Phosphide and Related Materials, Matue, Japan May, (2007)
  15. Takashi Fukui and Junichi Motohisa: "Epitaxial III-V Semiconductors: Nanowires and Nanotubes", Nano and Giga Challenges in Electronics and Photonics, Phoenix, Arizona, USA, March 12-16 (2007)
  16. Takashi Fukui and Junichi Motohisa: "Epitaxial III-V Semiconductors: Nanowires and Nanotubes" SEMICON KOREA, Seoul, Korea January 31 - Februaly 2 (2007).
  17. T. Fukui and J. Motohisa: "III-V semiconductor nanowires grown by metalorganic vapor phase epitaxy", NANO KOREA 2006, Seoul, Korea (2006).
  18. S. Hara, J. Motohisa and T. Fukui: "III-V Semiconductor Nanowires and Nanotubes Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy", (Invited) presented at the 20th AACGE-western section Conference on Crystal Growth and Epitaxy, the Stanford Sierra Camp at Fallen Leaf Lake, California, USA, June 4-7, 2006.
  19. T. Fukui and J. Motohisa: "Novel growth issues for quantum nano-structures by MOVPE (plenary)",2006 International Conference on Metalorganic Vapor Phase Epitaxy, Miyazaki, Japan.
  20. T. Fukui and J. Motohisa: "Quantum dots and nanowires grown by selective area MOVPE (invited)", The 4th NIMS International Conference on Photonic Processes in Semiconductor Nanostructures, Tsukuba, Japan (2006).208
  21. S. Hara, J. Motohisa, J. Takeda, J. Noborisaka and T. Fukui: "Photoluminescence from Single Hexagonal Nano-Wire with GaInAs?/GaAs? Double Hetero-Structures Grown by Selective Area MOVPE (Invited)", the 31st International Symposium on Compound Semiconductors (ISCS2004), Seoul, Korea (2004).
  22. T. Fukui and J. Motohisa: "Growth of compound semiconductor dot-network for single electron transistor (invited)," 12th Int. Conference on Solid Films and Surfaces, Hamamatsu, Japan (2004).
  23. T. Fukui and J. Motohisa: "GaAs? single electron devices and their logic circuits based on selectively formed dot network (invited)," 6th RIES-Hokudai Symposium, Sapporo, Japan (2004).
  24. T. Fukui and J. Motohisa: "MOVPE growth of GaAs? nano-structures and their applications to single electron devices (invited)," Int. Symp. Molecular Nano-Engineering and its Development into Microsystems, Tokyo, Japan (2004).
  25. T. Fukui and J. Motohisa: "III-V semiconductor nano-structures fabricated by MOVPE growth and their application to nano-devices (invited)," Symposium on Surface Physics 2005, Iwate, Japan (2005).
  26. T. Fukui, F. Nakajima and J. Motohisa: "GaAs? single electron transistors and their integrated logic circuits based on selectively grown quantum nanostructures (invited)", The 8th IUMRS International Conference on Advanced Materials, Yokohama, Japan (2003).
  27. T. Fukui, F. Nakajima, Y. Miyoshi and J. Motohisa: "GaAs? single electron devices and integrated circuits based on selectively grown quantum nanostructures (invited)", International Symposium on Semiconductor Functional Nano Systems, Atsugi, Japan (2003).
  28. T. Fukui and J. Motohisa: "Surface Analysis of Compound Semiconductor Nano-structures by AFM and STM (invited)", New Trends and Possibilities of Surface Analysis -- Towards the Analysis of Nano-structrured Materials, Tokyo, Japan (2002).

2001 and before (More Publications)


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