| ・ | M. Toguchi, K. Miwa, T. Sato: “Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect”, Journal of The Electrochemical Society 166, H510-H512 (2019), DOI: 10.1149/2.0551912jes. | ||
| ・ | M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, T. Yoshida, T. Sato: “Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions”, Applied Physics Express 12, 66504 (2019), DOI: 10.7567/1882-0786/ab21a1. | ||
| ・ | K. Uemura, M. Deki, Y. Honda, H. Amano, T. Sato: “Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors”, Japanese Journal of Applied Physics 58, SCCD20 (2019), DOI: 10.7567/1347-4065/ab06b9. | ||
| ・ | F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, and T. Sato: “Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source”, Applied Physics Express 12, 031003 (2019), DOI: 10.7567/1882-0786/ab043c. | ||
| ・ | S. Matsumoto, M. Toguchi, K. Takeda, T. Narita, T. Kachi, and T. Sato: “Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN”, Japanese Journal of Applied Physics 57, 121001 (2018), DOI: 10.7567/JJAP.57.121001. | ||
| ・ | Y. Kumazaki, S. Matsumoto, T. Sato: “Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications”, Journal of The Electrochemical Society 164, H477-H483 (2017), DOI: 10.1149/2.0771707jes. | ||
| ・ | Y. Kumazaki, K. Uemura, T. Sato, T. Hashizume: “Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process”, Journal of Applied Physics 121, 184501 (2017), DOI: 10.1063/1.4983013. | ||
| ・ | T. Sato, X. Zhang, K. Ito, S. Matsumoto and Y. Kumazaki “Electrochemical formation of N-type GaN and N-type InP porous structures for chemical sensor applications”, Proceeding of 2016 IEEE SENSORS, pp. 7808443- 1–3, (2016), doi: 10.1109/ICSENS.2016.7808443. | ||
| ・ | 熊崎 祐介, 植村圭佑,佐藤 威友, “電気化学加工技術を利用したAlGaN/GaNヘテロ構造の低損傷リセスエッチング”, 信学技報, vol. 116, no. 358, ED2016-66, pp. 45-50 (2016). | ||
| ・ | T. Sato, Y. Kumazaki, M. Edamoto, M. Akazawa and T. Hashizume: “Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions (invited)”, Proceeding of SPIE 9748, Gallium Nitride Materials and Devices XI, 97480Y (2016). | ||
| ・ | Y. Kumazaki, Z. Yatabe, and T. Sato: “Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching”, Japanese Journal of Applied Physics, 55 (4S) 04EJ12 (2016). | ||
| ・ | T. Sato, Y. Kumazaki, H. Kida, A. Watanabe, Z. Yatabe and S. Matsuda: “Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge”, Semiconductor Science and Technology 31(1) 014012 (2016). | ||
| ・ | T. Sato, H. Kida, Y. Kumazaki, and Z. Yatabe “Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination”, ECS Transactions, 69(2) 161-166 (2015). | ||
| ・ | Z. Yatabe, J. T. Asubar, T. Sato, T. Hashizume: “Interface Trap States in Al2O3/AlGaN/GaN Structure Induced by ICP Etching of AlGaN Surfaces”, Physica Status Solidi (a) - Applications and Materials Science , 212(5) 1075-1080 (2015). | ||
| ・ | A. Watanabe, Y. Kumazaki, Z. Yatabe and T. Sato, “Formation of GaN-porous Structures using Photo-assisted Electrochemical Process in Back-side Illumination Mode”, ECS Electrochemistry Letters, 4(5) H11-H13 (2015). | ||
| ・ | Z. Yatabe, Y. Hori, W.-C. Ma, J. T. Asubar, M. Akazawa, T. Sato, T. Hashizume: “Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors”, Japanese Journal of Applied Physics, 53(10) 100213-1-100213-10 (2014). | ||
| ・ | Y. Kumazaki, A. Watanabe, Z. Yatabe, and T. Sato: “Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching”, Journal of The Electrochemical Society, 161 (10) H705-H709 (2014). | ||
| ・ | Y. Kumazaki, T. Kudo, Z. Yatabe and T. Sato, “Investigation on Optical Absorption Properties of Electrochemically Formed Porous InP using Photoelectric Conversion Devices”, Applied Surface Science, vol. 279, (2013), 116-120. | ||
| ・ | R. Jinbo, Y. Kumazaki, Z. Yatabe and T. Sato, “Formation and Photoelectrical Measurements of Pt Schottky Interfaces on InP Porous Structures”, ECS Transactions, vol. 50, (2013), 247-252. | ||
| ・ | R. Jinbo, T. Kudo, Z. Yatabe, T. Sato, "Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure", Thin Solid Films, vol. 520, (2012),5710-5714. | ||
| ・ | T. Sato, N. Yoshizawa, T. Hashizume, "Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells", Thin Solid Films, vol. 518, (2010),4399-4402. | ||
| ・ | T. Sato, N. Yoshizawa, H. Okazaki, T. Hashizume, "Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching", ECS Transactions, vol. 25, no. 42, (2010), 83-88. | ||
| ・ | T. Sato, A. Mizohata, T. Hashizume, "Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors", Journal of The Electrochemical Society, vol. 157, (2010), H165-H169. | ||
| ・ | N. Yoshizawa, T. Sato, T. Hashizume, "Fundamental Study of InP-Based Open-Gate Field Effect Transistors for Application to Liquid-Phase Chemical Sensors", Japanese Journal of Applied Physics, vol. 48, (2009), 091102. | ||
| ・ | T. Sato, A. Mizohata, "Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures", Electrochemical and Solid-State Letters, vol. 11, no.5, (2008), H111-H113. | ||
| ・ | T. Sato, A. Mizohata, N. Yoshizawa, T. Hashizume, "Amperometric detection of hydrogen peroxide using InP porous nanostructures", Applied Physics Express, vol. 1, no.5, (2008), 051202. | ||
| ・ | T. Sato, A. Mizohata, N. Yoshizawa, T. Hashizume, "Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors", phys. stat. sol. (c), vol. 5, no. 11, (2008), 3475-3478. | ||
| ・ | T. Sato, A. Mizohata, N. Yoshizawa, T. Hashizume, "Complete Removal of Irregular Top Layer for Sensor Applications of InP Porous Nanostructures", ECS Transactions, vol. 16 no. 3, (2008), 405-410. | ||
| ・ | T. Sato, T. Fujino, T. Hashizume, "Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions", Electrochemical and Solid-State Letters, vol. 10, no.5, (2007), H153-H155. | ||
| ・ | N. Shiozaki, T. Sato, T. Hashizume, "Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water", Japanese Journal of Applied Physics, Vol. 46, No. 4A, 2007, pp. 1471-1473. | ||
| ・ | T. Fujino, T. Sato, T. Hashizume, "Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process", Japanese Journal of Applied Physics, Vol. 46, No. 7A, 2007, pp. 4375-4380. |