![[PukiWiki]](image/pukiwiki.png "[PukiWiki]")
#contents *Band Gap Energy of Semiconductors (I) room temperature *Band Gap Energy of Semiconductors (I) room temperature [#l438fdf7] *Band Gap Energy of Semiconductors (II) low temperature *Band Gap Energy of Semiconductors (II) low temperature [#fb5776ea] *Band Gap Energy of Semiconductors (III) temperature dependence *Band Gap Energy of Semiconductors (III) temperature dependence [#t019600a] -Varshini equation: Eg(T)=E0-a T^2/(T+b) LEFT:|material | E0 | a (10^-4) | b |reference|波長換算(nm)@RT| |GaAs|1.519|5.405|204|Heterostructure Lasers|| |GaP|2.338| 5.771| 372|'''ibid'''|| |InP|1.421|3.63|162|'''ibid'''|| |InAs|0.420|2.50|75|'''ibid'''|| ~ see also, ''BandGaps.ipf'' ~for alloys, Eg(x,T)=Eg_A(T)*x+Eg_B(T)*(1-x)+b*x*(x-1) *Lattice Constant **Zincblende *Lattice Constant [#ueda125b] **Zincblende [#z275c4c6] LEFT:||GaAs|InP|InAs|AlAs| |nm|0.56533|0.58688|0.60584|0.56611| *Luttinger parameters *Luttinger parameters [#ea29148c] (P. Lawaetz, Phys. Rev. B 4, 3460 (1971).) LEFT:||GaAs|InP|InAs|AlAs| |gamma1|7.65|6.28|19.67|4.04| |gamma2|2.41|2.08|8.37|0.78| |gamma3|3.28|2.76|9.29|1.57| Taken from Chao and Chuang, Phys. Rev. B 46, 4110 (1992).) LEFT:||GaAs|InP|InAs| |gamma1|6.85|4.95|20.4| |gamma2|2.1|1.65|8.3| |gamma3|2.9|2.35|9.1| *line spectrum of Mercury *line spectrum of Mercury [#nb7c729e] -参考文献：理科年表 -国際標準波長として用いられているのもののみ LEFT:|253.652|296.728|312.566|365.015|404.656|407.781|434.750| |435.835|546.074|576.959|579.065|690.716|1013.98|| *Physical Properties of Semiconductors [#e2b70cfd] http://www.ioffe.rssi.ru/SVA/NSM/Semicond/
