useful equations

Band Gap Energy of Semiconductors (I) room temperature†

Band Gap Energy of Semiconductors (II) low temperature†

Band Gap Energy of Semiconductors (III) temperature dependence†

• Varshini equation: Eg(T)=E0-a T^2/(T+b)

  material	E0	a (10^-4)	b	reference	波長換算(nm)@RT
  GaAs	1.519	5.405	204	Heterostructure Lasers
  GaP	2.338	5.771	372	ibid
  InP	1.421	3.63	162	ibid
  InAs	0.420	2.50	75	ibid

see also, BandGaps.ipf

for alloys, Eg(x,T)=Eg_A(T)*x+Eg_B(T)*(1-x)+b*x*(x-1)

Lattice Constant†

Zincblende†

Luttinger parameters†

(P. Lawaetz, Phys. Rev. B 4, 3460 (1971).)

Taken from Chao and Chuang, Phys. Rev. B 46, 4110 (1992).)

line spectrum of Mercury†

• 参考文献：理科年表
• 国際標準波長として用いられているのもののみ

  253.652	296.728	312.566	365.015	404.656	407.781	434.750
  435.835	546.074	576.959	579.065	690.716	1013.98

Physical Properties of Semiconductors†

http://www.ioffe.rssi.ru/SVA/NSM/Semicond/

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