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*2004 RCIQE International Summer Seminar Overview
-Date: July 28- 30, 2004.
-Venue: "Niseko Ikoi-no-Mura"~
(Aza-Niseko 475, Niseko, Hokkaido 048-1151, Tel: 0136-58-311)
-Organizing staff:~
N. Shiozaki, S. Hashimoto, Y. Yamazaki, T. Hashizume, M. Akazawa, S. Kasai, T. Sato

*Time Table
LEFT:|>|July 28 (Wednesday)|
|13:00-13:10|Opening Remarks|
|13:10-15:15|Session I|
|15:15-16:15|Poster Session I|
|16:15-18:15|Session II|
|18:30-|Dinner|
|>|July 29 (Thursday)|
|8:00-9:00|Breakfast|
|9:00-10:00|Session III|
|10:00-11:00|Poster Session II|
|11:00-12:10|Session IV|
|12:10-18:00|Ad Hoc Session|
|18:00-|Banquet|
|>|July 30 (Friday)|
|8:00-9:00|Breakfast|
|9:00-10:20|Session V|
|10:-10:40|Break|
|10:25-12:20|Session VI|
|12:20-12:30|Closing Remarks|

*Technical Program (draft)
LEFT:|>|>|July 28|
||13:00~13:10|Opening Remarks|
||>|''Session I'': Growth of Nanostructures (125 min)|
||>|Chair: M. Yumoto|
||13:10~13:40|''Takashi Fukui'': Oral 30 min|
|||"MOVPE Growth for Nanostructures"|
||13:40~14:10|''Taketomo Sato'': Oral 30 min|
|||"Selective MBE Growth of GaAs Ridge Nano-wires on Pre-patterned Substrates"|
||14:10~14:30|''Shinjiro Hara'': Oral 20 min|
|||"MOVPE Growth of Magnetic Materials"|
||14:30~14:45|''Takeshi Kimura'': Oral 15 min|
|||"Evolution of Cross-Sectional Structures during Selective MBE Growth of InGaAs Hexagonal Nanowire Networks on InP (001) and (111)B Substrates"|
||14:45~15:00|''Takeshi Oikawa'': Oral 15 min|
|||"Fabrication of AlGaN/GaN Quantum Wire Structures Using ECR-RIBE and Selective MBE Growth on GaN Patterned Substrates"|
||15:00~15:15|''Shinji Hashimoto'': Oral 15 min|
|||"Selectnive Area MOVPE Growth for InP-Based Photonic Crystals"|
||15:15~16:15|''Poster Session I'' (60 min)|
||>|''Session II'': Communication and Sensing Devices and Systems (120 min)|
||>|''Session II'': Communication Devices and Systems (120 min)|
||>|Chair: D. Nataraj|
||16:15~16:45|''Eiichi Sano'': Oral 30 min|
|||"High-speed Circuits and Devices for Telecommunication Systems"|
||16:45~17:15|''Masauki Ikebe'': Oral 30 min|
|||RF-ID Systems and Circuits|
||17:15~17:45|''Tamotsu Hashizume'': Oral 30 min|
|||"Wide Bandgap Semiconductor Devices"|
||17:45~18:00|''Yuusuke Yamazaki'': Oral 15 min|
|||"Autocorrelation Measurements on Photoconductive Switches in Transmission Lines"|
||18:00~18:15|''Maiko Takeuchi'': Oral 15 min|
|||"Fabrication and Characterization of Microwave and Millimeter Wave Antenna and Rectenna for IQ Chips"|
|>|>|July 29|
||>|''Session III'': Special Lecture (60min)|
||>|Chair: A.M.B.Hashim|
||9:00~10:00|''Hideaki Takayanagi'': Oral 60 min|
|||"Updated Superconducting Proximity Effect"|
||10:00~11:00|''Poster Session II'' (60min)|
||>|''Session IV'': Photonic and THz Devices (70min)|
||>|Chair: I. Tamai|
||11:00~11:30|''Masamichi Akazawa'': Oral 30 min|
|||"Generation and Detection of Terahertz Wave"|
||11:30~11:50|''Lin Yang'': Oral 20 min|
|||"Photonic Crystals and Their Applications"|
||11:50~12:10|''Junichiro Takeda'': Oral 20 min|
|||"MOVPE growth of Photonic Crystals"|
|||"MOVPE Growth of Photonic Crystals"|
||12:10~18:00|Ad Hoc Session|
|||"Discussion on the Next-Generation Electronics"|
|>|>| July 30|
||>|''Session V'': Bulk and Surface/Interface States (80 min)|
||>|Chair: N. Ooike|
||9:00~9:30|''Hideki Hasegawa'': Oral 30 min|
|||"Bulk, Surface and Interface States in Semiconductors and Their Detection"|
||9:30~9:50|''Rui Jia'': Oral 20 min|
|||"Side-Gating Study in AlGaAs/GaAs Quantum Wire Transistor"|
||9:50~10:05|''Nanako Shiozaki'': Oral 15 min|
|||"Effects of Surface Passivation on GaAs Quantum Wires Using Si Interface Control Layer"|
||10:05~10:20|''Kazushi Matsuo'': Oral 15 min|
|||"Pt Schottky Diode Gas Sensors Formed on GaN and AlGaN/GaN Heterostructure"|
||10:20~10:40|Break|
||>|''Session VI'': Quantum Devices and Circuits (100 min)|
||>|Chair: J. Takeda|
||10:40~11:10|''Seiya Kasai'': Oral 30 min|
|||"Quantum Nano-devices and Their Integration Technology for Next Generation Electronics"|
||11:10~11:30|''Devaraj Nataraj'': Oral 20 min|
|||"Single Electron Memory by SA-MOPVE"|
||11:30~11:50|''Miki Yumoto'': Oral 20 min|
|||"Speed-Power Performances of WPG Quantum Wire Switch for BDD Quantum LSIs"|
||11:50~12:05|''Yohei Natsui'': Oral 15 min|
|||"Fabrication of Single Electron Devices and Circuits by SA-MOVPE"|
||12:05-12:20|''Yuuji Abe'': Oral 15 min|
|||"Fabrication and Characterization of GaAs-Based Single Electron Switches Utilizing Schottky Wrap Gates for Hexagonal BDD Quantum Circuits"|
||12:20~12:30|Closing remarks|
-Poster Sessions
LEFT:|>|''Poster Session I''|
|P1-1|''Premila Mohan''|
||"Fabrication of InP-Based Nanwires by Selective Area MOVPE"|
|P1-2|''Isao Tamai''|
||"Hexagonal GaAs Nano-wire Network Formed by Selective MBE Growth on Patterned Substrate"|
|P1-3|''Jinichiro Noborisaka''|
||"Selective Area MOVPE Growth of GaAs Nanowires"|
|P1-4|''Junji Kotani''|
||"Experimental and Computer Analysis of Leakage Currents in Nitride-based Schottky Diodes"|
|P1-5|''Koji Inafune''|
||"Design of millimeter-wave active antennas using the FDTD method"|
|P1-6|''A.M.B.Hashim''|
||"Interaction between Electromagnetic Wave and Semiconductor Plasma Wave and Its Application to High Frequency Devices"|
|P1-7|''Masaki Igarashi''|
||"Conduction Mechanism and Hall Effect in Semiconductors"|
|P1-8|''Takuya Kokawa''|
||"Current Transport Characteristics in Schottky Contacts"|
|P1-9|''Keitaro Ikejiri''|
||"Differential Capacitance and Carrier Density in Schottky Junctions"|
|P1-10|''Hiroshi Osabe''|
||"Light Absorption in Semiconductors and Photodetectors"|
|P1-11|''Takeshi Tamura''|
||"Capacitance-Voltage Characteristics of MOS Structures"|
|>|''Poster Session II''|
|P2-1|''Akira Koike''|
||"Principle of Metalorganic Vapor Phase Epitaxy"|
|P2-2|''Akihiro Tarumi''|
||"Selective Area MOVPE Growth of InGaAs Air-Hole Arrays for the Application of Photonic Crystals"|
|P2-3|''Noboru Ooike''|
||"Fabrication of Quantum Wires Transistors with Self-aligned Gate by Selective Area MOVPE"|
||"Fabrication of Quantum Wire Transistors with Self-aligned Gate by Selective Area MOVPE"|
|P2-4|''Masamitsu Kaneko''|
||"Organic Semiconductor Devices"|
|P2-5|''Takahiro Tamura''|
||"GaAs Quantum Node Devices Utilizing Selective MBE for Hexagonal BDD Quantum LSIs"|
|P2-6|''Takeshi Tanaka''|
||"THz-wave filters using surface periodic structures composed of the metal films"|
|P2-7|''Kentaro Maeno''|
||"Deep Levels in Semiconductors"|
|P2-8|''Tatsuya Nakamura''|
||"Principle of Light Emitting Devices"|
|P2-11|''Hiroki Kato''|
||"Current Transport Characteristics in pn-Junction Diodes"|
|P2-10|''Toshiyuki Fujino''|
||"I-V Characteristics of a MOS Field Effect Transistor"|
|P2-11|''Kouji Iida''|
||"Operation Principle of a Bipolar Transistor"|

*参考
-昨年のプログラム
http://www.rciqe.hokudai.ac.jp/main/conferences/RCIQEseminar/Summer2003.html