July 28 |
| 13:00~13:10 | Opening Remarks |
| Session I: Growth of Nanostructures (125 min) |
| Chair: M. Yumoto |
| 13:10~13:40 | Takashi Fukui: Oral 30 min |
| | "MOVPE Growth for Nanostructures" |
| 13:40~14:10 | Taketomo Sato: Oral 30 min |
| | "Selective MBE Growth of GaAs Ridge Nano-wires on Pre-patterned Substrates" |
| 14:10~14:30 | Shinjiro Hara: Oral 20 min |
| | "MOVPE Growth of Magnetic Materials" |
| 14:30~14:45 | Takeshi Kimura: Oral 15 min |
| | "Evolution of Cross-Sectional Structures during Selective MBE Growth of InGaAs Hexagonal Nanowire Networks on InP (001) and (111)B Substrates" |
| 14:45~15:00 | Takeshi Oikawa: Oral 15 min |
| | "Fabrication of AlGaN/GaN Quantum Wire Structures Using ECR-RIBE and Selective MBE Growth on GaN Patterned Substrates" |
| 15:00~15:15 | Shinji Hashimoto: Oral 15 min |
| | "Selectnive Area MOVPE Growth for InP-Based Photonic Crystals" |
| 15:15~16:15 | Poster Session I (60 min) |
| Session II: Communication Devices and Systems (120 min) |
| Chair: D. Nataraj |
| 16:15~16:45 | Eiichi Sano: Oral 30 min |
| | "High-speed Circuits and Devices for Telecommunication Systems" |
| 16:45~17:15 | Masauki Ikebe: Oral 30 min |
| | RF-ID Systems and Circuits |
| 17:15~17:45 | Tamotsu Hashizume: Oral 30 min |
| | "Wide Bandgap Semiconductor Devices" |
| 17:45~18:00 | Yuusuke Yamazaki: Oral 15 min |
| | "Autocorrelation Measurements on Photoconductive Switches in Transmission Lines" |
| 18:00~18:15 | Maiko Takeuchi: Oral 15 min |
| | "Fabrication and Characterization of Microwave and Millimeter Wave Antenna and Rectenna for IQ Chips" |
July 29 |
| Session III: Special Lecture (60min) |
| Chair: A.M.B.Hashim |
| 9:00~10:00 | Hideaki Takayanagi: Oral 60 min |
| | "Updated Superconducting Proximity Effect" |
| 10:00~11:00 | Poster Session II (60min) |
| Session IV: Photonic and THz Devices (70min) |
| Chair: I. Tamai |
| 11:00~11:30 | Masamichi Akazawa: Oral 30 min |
| | "Generation and Detection of Terahertz Wave" |
| 11:30~11:50 | Lin Yang: Oral 20 min |
| | "Photonic Crystals and Their Applications" |
| 11:50~12:10 | Junichiro Takeda: Oral 20 min |
| | "MOVPE Growth of Photonic Crystals" |
| 12:10~18:00 | Ad Hoc Session |
| | "Discussion on the Next-Generation Electronics" |
July 30 |
| Session V: Bulk and Surface/Interface States (80 min) |
| Chair: N. Ooike |
| 9:00~9:30 | Hideki Hasegawa: Oral 30 min |
| | "Bulk, Surface and Interface States in Semiconductors and Their Detection" |
| 9:30~9:50 | Rui Jia: Oral 20 min |
| | "Side-Gating Study in AlGaAs/GaAs Quantum Wire Transistor" |
| 9:50~10:05 | Nanako Shiozaki: Oral 15 min |
| | "Effects of Surface Passivation on GaAs Quantum Wires Using Si Interface Control Layer" |
| 10:05~10:20 | Kazushi Matsuo: Oral 15 min |
| | "Pt Schottky Diode Gas Sensors Formed on GaN and AlGaN/GaN Heterostructure" |
| 10:20~10:40 | Break |
| Session VI: Quantum Devices and Circuits (100 min) |
| Chair: J. Takeda |
| 10:40~11:10 | Seiya Kasai: Oral 30 min |
| | "Quantum Nano-devices and Their Integration Technology for Next Generation Electronics" |
| 11:10~11:30 | Devaraj Nataraj: Oral 20 min |
| | "Single Electron Memory by SA-MOPVE" |
| 11:30~11:50 | Miki Yumoto: Oral 20 min |
| | "Speed-Power Performances of WPG Quantum Wire Switch for BDD Quantum LSIs" |
| 11:50~12:05 | Yohei Natsui: Oral 15 min |
| | "Fabrication of Single Electron Devices and Circuits by SA-MOVPE" |
| 12:05-12:20 | Yuuji Abe: Oral 15 min |
| | "Fabrication and Characterization of GaAs-Based Single Electron Switches Utilizing Schottky Wrap Gates for Hexagonal BDD Quantum Circuits" |
| 12:20~12:30 | Closing remarks |