Some reprints of the papers can be downloaded from HUSCAP (Hokkaido University collection of scholarly and academic papers).

topics†

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2007†

  1. L. Yang, J. Motohisa, J. Takeda, K. Tomiyoka and T. Fukui: "Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence", Nanotechnology 13 (2007) 105302.
  2. L. Yang, J. Motohisa, J. Takeda and T. Fukui: "Photonic crystal slabs with hexagonal air holes fabricated by selective area metal organic vapor phase epitaxy", Sensors and Actuators A: Physical 133 (2007) 288-293.
  3. Keitaro Ikejiri, Jinichiro Noborisaka, Shinjiroh Hara, Junichi Motohisa and Takashi Fukui: "Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE", J. Crsyt. Growth Volume 298, pp.616-619 (2007).
  4. K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa and T. Fukui: "Growth of highly uniform InAs nanowire arrays by selective-area MOVPE", J. Cryst. Growth 298, pp.644-647 (2007).
  5. Shinjiroh Hara, Junichi Motohisa and Takashi Fukui: "Self-assembled formation of ferromagnetic MnAs nanoclusters on GaInAs/InP (111) B layers by metal-organic vapor phase epitaxy", J. Cryst. Growth 298, pp.612-615 (2007).
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2006†

  1. J. Motohisa and T. Fukui: "Catalyst-free selective area MOVPE of semiconductor nanowires", Proceedings of SPIE 6370, 63700B (2006).
  2. L. Yang, J. Motohisa, J. Takeda, K. Tomioka, and T. Fukui: "Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy", Appl. Phys. Lett. 89, 203110 (2006).
  3. Tamura, H., Nomura, S.; Yamaguchi, M.; Akazaki, T.; Takayanagi, H.; Mohan, P.; Motohisa, J.; Fukui, T. :"Magneto-optics of GaAs quantum wire lattices grown by selective-area MOVPE", Journal of Physics: Conference Series, v 38, n 1, 2006, p 130-3
  4. Premila Mohan, Junichi Motohisa and Takashi Fukui:" Fabrication of InP/InAs/InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy", Appl. Phys. Lett. 88, 133105 (2006). (download from HUSCAP) (also at Virtual Journal of Nanoscience and Technology, Volume 13, Issue 14)
  5. Junichi Motohisa and Takashi Fukui: "Semiconductor Nanowires and Their Application to Nanodevices (in Japanese)", Oyo Buturi 75, 296-302 (2006).
  6. Premila Mohan, Junichi Motohisa, and Takashi Fukui: "Realization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires", Appl. Phys. Lett. 88, 013110 (2006). (download from HUSCAP) (also at Virtual Journal of Nanoscience and Technology, Volume 13, Issue 2)
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2005†

  1. Lin Yang, Junichi Motohisa, Junichiro Takeda, and Takashi Fukui: "Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes: selective area metal organic vapor phase epitaxy", Optics Express Vol. 13, No. 26, pp.10823-10832
  2. D. Nataraj, N. Ooike, J. Motohisa, and T. Fukui:"Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy", Appl. Phys. Lett. 87, 193103 (2005). (download from HUSCAP) (also at Virtual Journal of Nanoscience and Technology, Volume 12, Issue 20)
  3. Junichiro Takeda, Masashi Akabori, Junichi Motohisa, Richard N?tzel and Takashi Fukui:"Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs(111)B substrates using flow-rate modulation mode", Nanotechnology 16, pp.2954-2957 (2005)
  4. Premila Mohan, Junichi Motohisa and Takashi Fukui: "Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays", Nanotechnology 16, pp. 2903-2907 (2005).
  5. J. Noborisaka, J. Motohisa, S. Hara, and T. Fukui: "Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy", Appl. Phys. Lett. 87, 093109 (2005). (download from HUSCAP) (see cover of APL at http://apl.aip.org/apl/covers/87_9.jsp ) (also at Virtual Journal of Nanoscience and Technology, Volume 12, Issue 10)
  6. Y. Miyoshi, F. Nakajima, J. Motohisa, and T. Fukui:"A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy", Appl. Phys. Lett. 87, vol. 3, 033501 (2005). (download from HUSCAP) (see cover of APL at http://apl.aip.org/apl/covers/87_3.jsp ) (also at Virtual Journal of Nanoscience and Technology, Volume 12, Issue 4)
  7. Jinichiro Noborisaka, Junichi Motohisa, and Takashi Fukui: "Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy", Appl. Phys. Lett. 86, 213102 (2005). (download from HUSCAP) (also at Virtual Journal of Nanoscience and Technology, Volume 11, Issue 21)
  8. Lin Yang, Junichi Motohisa, and Takashi Fukui: "Suggested procedure for the use of the effective-index method for high-index-contrast photonic crystal slabs", Opt. Eng. 44, 078002 (2005).
  9. L. Yang, J. Motohisa, and T. Fukui:"Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides," Jpn. J. Appl. Phys. Vol. 44, No. 4B, 2005, pp. 2531-2536 (2005).
  10. S. Hara, J. Motohisa, J. Noborisaka, J. Takeda, and T. Fukui: "Photoluminescnce from single hexagonal nano-wire grown by selective area MOVPE," Inst. Phys. Conf. Ser. No 184, pp.393-398 (2005).
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2004†

  1. L. Besombes, J. J. Baumberg, and J. Motohisa: "Polarization-dependent Ultrafast Rabi Oscillations in Single InGaAs Quantum Dots," Semiconductor Science and Technology, 19 (4), S148-S151 (2004).
  2. Junichiro Takeda, Masaru Inari, Junichi Motohisa and Takashi Fukui: "Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE," Journal of Crystal Growth, Volume 272, 1-4, pp. 570-575 (2004).
  3. N, Ooike, J. Motohisa, and T. Fukui: "MOVPE selectively grown GaAs nano-wires with self-aligned W side gate," Journal of Crystal Growth, v 272, n 1-4, p 175-179 (2004).
  4. J. Motohisa J. Noborisaka, J. Takeda, M. Inari, and T. Fukui: "Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates," Journal of Crystal Growth, v 272, n 1-4, p 180-185 (2004). (download from HUSCAP)
  5. N. Ooike, J. Motohisa, and T. Fukui "Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE," Thin Solid Films, v 464-465, p 220-224 (2004).
  6. J. Motohisa, J. Takeda, M. Inari, J. Noborisaka, and T. Fukui "Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE," Physica E, v 23, n 3-4, p 298-304 (2004). (download from HUSCAP)
  7. Premila Mohan ,Junichi Motohisa , and Takashi Fukui "Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy," Applied Physics Letters Volume 84, Issue 14, pp. 2664-2666 (2004). (download from HUSCAP)
  8. M. Inari, J. Takeda, J. Motohisa, and T.Fukui: "Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals," Physica E Vol.21, No.2--4, pp.620--624 (2004).
  9. J. J. Motohisa Takeda, M. Inari, and T. Fukui: "Growth and optical properties of 2D photonic crystals based on hexiagonal GaAs/AlGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy," Mat. Res. Soc. Proc. Vol. 797, W.6.6.1-W.6.6.6 (2004).
  10. H. J. Kim, J. Motohisa and T. Fukui: "Formation of GaAs wire structures and position controlled In$_{0.8}$Ga$_{0.2}$As quantum dots on SiO$_{2}$-patterned vicinal (001) GaAs substrate," Nanotechnology Vol.15, pp.292-296 (2004).
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2003†

  1. F. Nakajima,Y. Miyoshi, J. Motohisa and T. Fukui: "Single-electron AND/NAND logic circuits based on a self-organized dot network," Appl. Phys. Lett. Vol. 83, No.13, pp.2680-2682 (2003). (download from HUSCAP) (see cover of APL at http://apl.aip.org/apl/covers/83_13.jsp )
  2. M. Akabori, J. Takeda, J. Motohisa and T. Fukui: "InGaAs nano-pillar array formation on partially masked InP (111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application," Nanotechnology Vol.14, No.10, pp.1071-1074 (2003).
  3. L. Besombes, J. J. Baumerg and J. Motohisa: "Excited States in Optically Gated Charged Single InAs Quantum Dots," physica status solidi (c) Vol.0, No.5, pp.1501-1505 (2003).
  4. P. Mohan, F. Nakajima, M. Akabori, J. Motohisa and T. Fukui: "Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy," Appl. Phys. Lett. Vol. 83, No. 4, pp. 689-691, (2003). (download from HUSCAP)
  5. L. Besombes, J. J. Baumberg and J. Motohisa:"Coherent Spectroscopy of Optically Gated Charged Single InGaAs Quantum Dots," Phys. Rev. Lett. Vol.90, No.25, pp. 257402-1-257402-4 (2003). (download from HUSCAP)
  6. H. Takahashi, Y. Miyoshi, F. Nakajima, J. Motohisa and T. Fukui: "Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE," Appl. Surf. Sci. Vol. 216, No.1-4, pp. 402-406 (2003).
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2002†

  1. M. Akabori, J. Takeda, J. Motohisa and T. Fukui:"Selective Area MOVPE Growth of Two-dimensional Photonic Crystals Hving an Air-hole Array and its Application to Air-bridge-type Structures," Physica E vol.13, No. 2-4, pp.446-450 (2002).
  2. W.G. van der Wiel, S. De Franceschi, J.M. Elzerman, S. Tarucha, L.P. Kouwenhoven, J. Motohisa, F. Nakajima and T. Fukui:"Two-stage Kondo effect in a quantum dot at high magnetic field," Physical Review Letters vol.88, No. 12, 126803 (2002). (download from HUSCAP)
  3. F. Nakajima, Y. Ogasawara, J. Motohisa and T. Fukui: " Two-way current switch using Coulomb blockade in GaAs quantum dots by selective area metalorganic vapor phase epitaxy," Physica E vol.13, No. 2-4, pp.703-707 (2002).
  4. J. Motohisa, W.G. van der Wiel, J.M. Elzerman, S. De Franceschi, F. Nakajima, Y. Ogasawara, T. Fukui, and L. P. Kouwenhoven: " Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy," Physica E vol.13, No. 2-4, pp.687-690 (2002). (download from HUSCAP)
  5. Toyonori. Kusuhara, Fumito Nakajima, Junichi Motohisa and Takashi Fukui: " Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth," Japanese Journal of Applied Physics Part 1 vol.41, No. 4B, pp.2508-2512 (2002).
  6. J. Motohisa, F. Nakajima, T. Fukui, W.G. van der Wiel, J.M. Elzerman, and S. De Franceschi, and L. P. Kouwenhoven: " Fabrication and Low-Temperature Transport Properties of Selectively Grown Dual-Gated Single-Electron Transistors," Applied Physics Letters vol.80, No. 15, pp.2797-2799 (2002). (download from HUSCAP)
  7. T. Ishihara, S. Lee, M. Akabori, J. Motohisa and T. Fukui: " Dependence on In content of In$_x$Ga$_{1-x}$As quantum dots grown along GaAs multiatomic steps by MOVPE," Journal of Crystal Growth vol.237-239, No. Part 2, pp.1476-1480 (2002).
  8. Junichiro Takeda, Masashi Akabori, Junichi Motohisa and Takashi Fukui: " "Formation of Al$_x$Ga$_{1-x}$As periodic array of micro-hexagonal pillars and air holes by selective area MOVPE," Applied Surface Science vol.190, No. 1-4, pp.236-241 (2002).
  9. J. Motohisa, F. Nakajima, and T. Fukui: "Formation of Nano-Scale Heterointerfaces by Selective Area Metalorganic Vapor Phase Epitaxy and Their Applications," Applied Surface Science vol.190, No. 1-4, pp.184-190 (2002).
  10. H. J. Kim, J. Motohisa and T. Fukui: "Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001)GaAs substrates," Applied Physics Letters vol.81, No. 27, pp.5147-5149 (2002). (download from HUSCAP)
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Invited Talks†

  1. J. Motohisa and T. Fukui: "Growth and properties of semiconductor nanowires by selective-area metalorganic vapor phase epitaxy", 2006 International Conference on Nano Science adn Nano Technology, Gwangju, Korea (2006).
  2. J. Motohisa and T. Fukui: "Catalyst-free selective-area MOVPE of semiconductor nanowires", Optics East 2006, Boston, Massachusetts USA (2006)
  3. J. Motohisa and T. Fukui: "Growth and properties of semiconductor nanowires by Selective-Area Metalorganic Vapor Phase Epitay", 2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Tohoku University, Sendai, Japan (2006)
  4. J. Motohisa and T. Fukui: "Formation of Nanostructures by Selective-Area MOVPE and Their Applications", 2005 Internaional Microprocess and Nanotechnolgy Conference, Tokyo, Japan (2005).
  5. J. Motohisa and T. Fukui: "Growth of Nanostructures by Selective Area MOVPE and Their Applications", International Conference on Quantum Transport in Synthetic Metals & Quantum Functional Semiconductores, 2004, Phoneix Park, Korea (2004).
  6. J. Motohisa, F. Nakajima and T. Fukui; "GaAs quantum dots fabricated by selective area epitaxy: from growth, physics to device application", 2nd International Conference on Semiconductor Quantum Dots, Tokyo, Japan (2002).
  7. J. Motohisa, "Formation of Quantum Dots and Its Application to Single Electron Devices by Selective Area MOVPE Growth", First International Workshop on Quantum Nonplanar Nanostructures and Nanoelectronics '01, Tsukuba, Japan (2001).
  8. Junichi Motohisa, Fumito Nakajima and Takashi Fukui: "Formation of nano-scale heterointerfaces by selective area metalorganic vapor phase epitaxy and its applications", 8th International Conference on the Formation of Semiconductor Interfaces, Sapporo, Japan (2001).
  9. J. Motohisa and T. Fukui: "Formation and Characterization of Semiconductor Nanostructures", International Workshop on Physics and Applications of Semiconductor Quantum Structures (1998 ASIAN SCIENCE SEMINAR), Cheju Island, Korea (1998).
  10. J. Motohisa, S. Hara, M. Akabori, T. Irisawa and T. Fukui: "Application of Self-Organized Multiatomic Steps on Vicinal GaAs Surfaces for Quantum Structures and Devices", Japan-China Workshop on Thin Films 1997, Tokyo, Japan (1997).
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Inivted as one of the co-authors (2002-)†

  1. S. Hara, J. Motohisa and T. Fukui: "III-V Semiconductor Nanowires and Nanotubes Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy", (Invited) presented at the 20th AACGE-western section Conference on Crystal Growth and Epitaxy, the Stanford Sierra Camp at Fallen Leaf Lake, California, USA, June 4-7, 2006.
  2. T. Fukui and J. Motohisa: "Novel growth issues for quantum nano-structures by MOVPE (plenary)",2006 International Conference on Metalorganic Vapor Phase Epitaxy, Miyazaki, Japan.
  3. T. Fukui and J. Motohisa: "Quantum dots and nanowires grown by selective area MOVPE (invited)", The 4th NIMS International Conference on Photonic Processes in Semiconductor Nanostructures, Tsukuba, Japan (2006).208
  4. S. Hara, J. Motohisa, J. Takeda, J. Noborisaka and T. Fukui: "Photoluminescence from Single Hexagonal Nano-Wire with GaInAs/GaAs Double Hetero-Structures Grown by Selective Area MOVPE (Invited)", the 31st International Symposium on Compound Semiconductors (ISCS2004), Seoul, Korea (2004).
  5. T. Fukui and J. Motohisa: "Growth of compound semiconductor dot-network for single electron transistor (invited)," 12th Int. Conference on Solid Films and Surfaces, Hamamatsu, Japan (2004).
  6. T. Fukui and J. Motohisa: "GaAs single electron devices and their logic circuits based on selectively formed dot network (invited)," 6th RIES-Hokudai Symposium, Sapporo, Japan (2004).
  7. T. Fukui and J. Motohisa: "MOVPE growth of GaAs nano-structures and their applications to single electron devices (invited)," Int. Symp. Molecular Nano-Engineering and its Development into Microsystems, Tokyo, Japan (2004).
  8. T. Fukui and J. Motohisa: "III-V semiconductor nano-structures fabricated by MOVPE growth and their application to nano-devices (invited)," Symposium on Surface Physics 2005, Iwate, Japan (2005).
  9. T. Fukui, F. Nakajima and J. Motohisa: "GaAs single electron transistors and their integrated logic circuits based on selectively grown quantum nanostructures (invited)", The 8th IUMRS International Conference on Advanced Materials, Yokohama, Japan (2003).
  10. T. Fukui, F. Nakajima, Y. Miyoshi and J. Motohisa: "GaAs single electron devices and integrated circuits based on selectively grown quantum nanostructures (invited)", International Symposium on Semiconductor Functional Nano Systems, Atsugi, Japan (2003).
  11. T. Fukui and J. Motohisa: "Surface Analysis of Compound Semiconductor Nano-structures by AFM and STM (invited)", New Trends and Possibilities of Surface Analysis -- Towards the Analysis of Nano-structrured Materials, Tokyo, Japan (2002).
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2001 and before (More Publications)†

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