＊発表論文　2001年/2000年

1. Taketomo Sato, Seiya Kasai and Hideki Hasegawa, "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices", Japanese Journal of Applied Physics, Vol.40, pp. 2021-2025, (2001)
   
2. Taketomo Sato, Seiya Kasai and Hideki Hasegawa, "Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process", Applied Surface Science, Vol.175-176, pp. 181-186, (2001) [link!]
   
3. Taketomo Sato, Seiya Kasai, Hiroshi Okada and Hideki Hasegawa, "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in situ Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.39, pp. 4609-4615, (2000) [link!]
   
4. Hajime Fujikura, Aimin Liu, Akihito Hamamatsu, Taketomo Sato and Hideki Hasegawa, "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characteristics", Japanese Journal of Applied Physics Part 1, Vol.39, pp. 4616-4620, (2000)
   
5. H. Hasegawa, T. Sato and S. Kasai, "Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP", Applied Surface Science, Vol.166, pp. 92-96, (2000)