＊発表論文　2005年

1. T. Sato, I. Tamai, H. Hasegawa, "Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates", Journal of Vacuum Science & Technology B, vol. 23, no.4, (2005), 1706-1713. [link!]
   
2. N. Shiozaki, T. Sato, H. Hasegawa, "Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy", Journal of Vacuum Science & Technology B, vol.23, no.4, (2005), 1714-1721. [link!]
   
3. H. Hasegawa, T. Sato, "Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures", Electrochemica Acta, vol.50, no.15, (2005), 3015-3027.
   
4. T. Sato, T. Oikawa, H. Hasegawa, "Growth of AlGaN/GaN quantum wire structures by radio-frequency-radical-assisted selective molecular beam epitaxy on prepatterned substrates", Jpn. J. of Appl. Phys., vol. 44, no.4B, (2005), 2487-2491. [link!]
   
5. I. Tamai, T. Sato, H. Hasegawa, "Cross-sectional evolution and its mechanism during selective molecular beam epitaxy growth of GaAs quantum wires on (111)B substrates", Jpn. J. of Appl. Phys., vol.44, no.4B, (2005), 2652-2656. [link!]
   
6. N. Shiozaki, S. Anantathanasarn, T. Sato, T. Hashizume, H. Hasegawa, "Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation", Applied Surface Science, vol.244, no.1-4, (2005) 71-74.
   
7. T. Oikawa, F. Ishikawa, T. Sato, T. Hashizume, H. Hasegawa, "Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates", Applied Surface Science, vol.244, no. 1-4, (2005) 84-87.