＊発表論文　1999年/...

1. C. Kaneshiro, T. Sato and H. Hasegawa, "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 1147-1152, (1999)[link!]
   
2. T. Sato, C. Kaneshiro and H. Hasegawa, "The Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 1103-1106, (1999)[link!]
   
3. T. Sato, C. Kaneshiro, H. Okada and H. Hasegawa, "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition", Japanese Journal of Applied Physics Part 1, Vol.38, pp. 2448-2452, (1999)[link!]
   
4. C. Kaneshiro, T. Sato and H. Hasegawa, "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process", Inst. Phys. Conf. Ser., Vol.162, pp. 585-590, (1999)
   
5. H. Okada, T. Sato, K. Jinushi and H. Hasegawa, "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates", Microelectronic Engineering, Vol.47, pp. 285-287, (1999)
   
6. H.Hasegawa, T.Sato and C.Kaneshiro, "Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process", Journal of Vacuum Science and Technology B, Vol.17, pp. 1856-1866, (1999)