＊発表論文　1999年/...

1. T. Sato, S. Uno, T. Hashizume and H. Hasegawa, "Large Schottky Barrier Height on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process", Japanese Journal of Applied Physics Part 1, Vol.36, pp. 1811-1817, (1997)
   
2. Hideki Hasegawa, Taketomo Sato and Tamotsu Hashizume, "Evolution Mechanism of Nearly Pinning-Free Platinum/n-type Indium Phosphide Interface with a High Schottky Barrier Height by in situ Electrochemical Process", Journal of Vacuum Science and Technology B, Vol.15, pp. 1227-1235, (1997)
   
3. Hideki Hasegawa, Taketomo Sato, Hiroshi Okada, Kei-ichiro Jinushi, Seiya Kasai and Yoshihiro Satoh, "Electrochemical Formation and Characterization of Schottky In-Plane and Wrap Gate Structures for Realization of GaAs- and InP-Based Quantum Wires and Dots", Applied Surface Science, Vol.123/124, pp. 335-338, (1998)